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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипAPT30M40LVRAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 76 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.04 Ω | 304 A | 300 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | - | - | ||
| APT30M40LVR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5010JLCAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | 44 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | Yes | - | - | - | EAR99 | - | FAST SWITCHING | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.1 Ω | 176 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010JLC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT10M13JNRAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 150A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | 150 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | 290 ns | 150 ns | - | EAR99 | - | - | 8541.29.00.95 | UPPER | SOLDER LUG | - | unknown | - | - | R-PUFM-D4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.013 Ω | 600 A | 100 V | 1500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | 2250 pF | 520 W | ||
| APT10M13JNR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5513JFLLAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 35A I(D), 550V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | 35 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Transferred | Yes | - | - | - | EAR99 | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | UL RECOGNIZED | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.13 Ω | 140 A | 550 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 379 W | - | - | ||
| APT5513JFLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT551R6BNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 6.5A I(D), 550V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 6.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 71 ns | 44 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 1.6 Ω | 26 A | 550 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 81 pF | 180 W | ||
| APT551R6BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT3540BNAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 16A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 16 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 127 ns | 72 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.4 Ω | 64 A | 350 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | 240 pF | 240 W | ||
| APT3540BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5017BLCAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 30 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | HIGH VOLTAGE, AVALANCHE RATING | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.17 Ω | 120 A | 500 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5017BLC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT7575BNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 13A I(D), 750V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 13 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 142 ns | 63 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.75 Ω | 52 A | 750 V | - | METAL-OXIDE SEMICONDUCTOR | 310 W | 180 pF | 310 W | ||
| APT7575BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT752RBNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 6 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | No | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT752RBN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT1204R7KLLAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 4.7 Ω | 14 A | 1200 V | 425 mJ | METAL-OXIDE SEMICONDUCTOR | 135 W | - | - | ||
| APT1204R7KLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5085BNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 9.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 9.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 70 ns | 48 ns | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.85 Ω | 38 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | 94 pF | 180 W | ||
| APT5085BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT11026JFLLAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 33A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 4 | SILICON | 33 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Transferred | Yes | - | - | - | EAR99 | - | - | - | UPPER | UNSPECIFIED | NOT SPECIFIED | unknown | NOT SPECIFIED | - | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.26 Ω | 134 A | 1100 V | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT11026JFLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6017LLLAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 35 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-264AA | 0.17 Ω | 140 A | 600 V | 1600 mJ | METAL-OXIDE SEMICONDUCTOR | 500 W | - | - | ||
| APT6017LLL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5010B2LCAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 47 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | EAR99 | - | HIGH VOLTAGE | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.1 Ω | 188 A | 500 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| APT5010B2LC | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT5025ANAnlielectronics Тип | Advanced Power Technology |
Description: Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 2 | SILICON | 20 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Obsolete | No | - | - | e0 | EAR99 | TIN LEAD | - | 8541.29.00.95 | BOTTOM | PIN/PEG | - | unknown | - | - | O-MBFM-P2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-204AA | 0.25 Ω | 80 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 230 W | - | 230 W | ||
| APT5025AN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6040BNRAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 18 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | 205 ns | 66 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-247AD | 0.4 Ω | 72 A | 600 V | 1210 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | 225 pF | 310 W | ||
| APT6040BNR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT903R5DNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 4.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT903R5DN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT903R5BNAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 4.5 A | ADVANCED POWER TECHNOLOGY INC | 1 | - | - | , | - | - | Obsolete | No | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | ||
| APT903R5BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPTX100EDAnlielectronics Тип | Advanced Power Technology |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTX100ED | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипAPT6015B2VFRAnlielectronics Тип | Advanced Power Technology |
Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 38 A | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | No | - | - | e0 | EAR99 | TIN LEAD | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.15 Ω | 152 A | 600 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | 520 W | - | - | ||
| APT6015B2VFR |
Индекс :
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