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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Characteristic | Drain Current-Max (ID) | Gross Weight | Ihs Manufacturer | Nominal voltage | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Protection degree | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Depth | Reach Compliance Code | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Power Gain-Min (Gp) | Height | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипPF5301-1Anlielectronics Тип | National Semiconductor Corporation |
Description: TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | e0 | EAR99 | - | TIN LEAD | - | - | BOTTOM | THROUGH-HOLE | - | unknown | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-92 | - | - | - | - | JUNCTION | 0.3 W | - | - | 1.5 pF | - | - | - | - | - | ||
| PF5301-1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNA31Anlielectronics Тип | National Semiconductor Corporation |
NA31
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| NA31 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N4861AAnlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,80MA I(DSS),TO-18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | 200 °C | - | , | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.36 W | - | - | - | - | - | - | - | - | ||
| 2N4861A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDP406ALAnlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | 15 A | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | 250 ns | 270 ns | e0 | EAR99 | - | TIN LEAD | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.1 Ω | 45 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | 100 pF | - | 50 W | - | - | - | ||
| NDP406AL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3131Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,BJT,NPN,15V V(BR)CEO,100MA I(C),MICROTO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | - | - | Obsolete | - | No | 250 MHz | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 0.15 W | 0.1 A | 30 | - | - | - | - | - | - | ||
| 2N3131 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC251BAnlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | - | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.35 W | 0.1 A | 180 | - | - | - | - | - | - | ||
| BC251B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPN3686Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,JFET,N-CHANNEL,1.2MA I(DSS),TO-92
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | , | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.36 W | - | - | - | - | - | - | - | - | ||
| PN3686 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMJE721Anlielectronics Тип | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-126VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 140 °C | - | - | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 1.2 W | 1.5 A | 40 | - | - | - | - | - | - | ||
| MJE721 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDP6050LAnlielectronics Тип | National Semiconductor Corporation |
Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | 48 A | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 400 ns | 530 ns | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | compliant | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.025 Ω | 144 A | 50 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | - | - | 400 pF | - | 100 W | - | - | - | ||
| NDP6050L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMTP4N08Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | 4 A | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | - | - | - | - | - | ||
| MTP4N08 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPN4858Anlielectronics Тип | National Semiconductor Corporation |
Description: TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | e0 | EAR99 | - | TIN LEAD | - | - | BOTTOM | THROUGH-HOLE | - | unknown | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | TO-92 | 60 Ω | - | - | - | JUNCTION | 0.36 W | - | - | 8 pF | - | - | - | - | - | ||
| PN4858 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5906Anlielectronics Тип | National Semiconductor Corporation |
Description: TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 7 | SILICON | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 2 | 150 °C | METAL | CYLINDRICAL, O-MBCY-W7 | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | e0 | EAR99 | - | TIN LEAD | - | - | BOTTOM | WIRE | - | unknown | O-MBCY-W7 | Not Qualified | SEPARATE, 2 ELEMENTS | DEPLETION MODE | - | - | N-CHANNEL | TO-78 | - | - | - | - | JUNCTION | 0.5 W | - | - | - | - | - | - | - | - | ||
| 2N5906 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N3070Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,JFET,N-CHANNEL,500UA I(DSS),TO-18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | 200 °C | - | , | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.35 W | - | - | - | - | - | - | - | - | ||
| 2N3070 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5461Anlielectronics Тип | National Semiconductor Corporation |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 1 | pusher travel PTmax = 2 mm | - | - | NATIONAL SEMICONDUCTOR CORP | AC: 250 V | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | IP64 | No | - | - | - | e0 | EAR99 | Railway switch from AZ series with short pusher | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | 49.1 (housing + pusher) mm | unknown | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | - | P-CHANNEL | TO-236AB | - | - | - | - | JUNCTION | 0.35 W | - | - | 2 pF | - | - | - | housing - 54 mm | 21.0 mm | ||
| MMBF5461 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5484Anlielectronics Тип | National Semiconductor Corporation |
Description: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 1 | lever travel - 5.0mm | - | 63.10 | NATIONAL SEMICONDUCTOR CORP | AC: 250 V | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | - | - | e0 | EAR99 | RUICHI AZ series lever track switch with rotating roller (short type) | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | in assembly - 77 mm | unknown | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-236AB | - | - | - | - | JUNCTION | 0.225 W | - | - | 1 pF | VERY HIGH FREQUENCY BAND | - | 16 dB | housing - 54 mm | 21.4 mm | ||
| MMBF5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNDT3055LAnlielectronics Тип | National Semiconductor Corporation |
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 1 | - | 3.7 A | - | NATIONAL SEMICONDUCTOR CORP | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | 70 ns | 40 ns | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | DUAL | GULL WING | - | compliant | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-261 | 0.12 Ω | 25 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | 1.1 W | - | - | - | ||
| NDT3055L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIRFZ48Anlielectronics Тип | National Semiconductor Corporation |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | 50 A | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-220AB | 0.018 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 150 W | - | - | - | ||
| IRFZ48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBTA18Anlielectronics Тип | National Semiconductor Corporation |
MMBTA18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MMBTA18 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTIP62BAnlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,BJT,PNP,80V V(BR)CEO,500MA I(C),TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 140 °C | - | - | - | - | Obsolete | - | No | 3 MHz | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 15 W | 0.5 A | 15 | - | - | - | - | - | - | ||
| TIP62B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N4446Anlielectronics Тип | National Semiconductor Corporation |
TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,100MA I(DSS),TO-46
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | 200 °C | - | - | - | - | Obsolete | - | No | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | JUNCTION | 0.4 W | - | - | - | - | - | - | - | - | ||
| 2N4446 |
Индекс :
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