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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Mount | Surface Mount | Number of Pins | Number of Terminals | Transistor Element Material | Case/Package | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer Package Code | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | RoHS | Rohs Code | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | HTS Code | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSKM111RAnlielectronics Тип | SEMIKRON |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM111R | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM100GAL163DAnlielectronics Тип | SEMIKRON |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM100GAL163D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM191Anlielectronics Тип | SEMIKRON |
Description: Power Field-Effect Transistor, 28A I(D), 1000V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 28 A | SEMIKRON INTERNATIONAL | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.37 Ω | 112 A | 1000 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 800 pF | 700 W | ||
| SKM191 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM300GA163DAnlielectronics Тип | SEMIKRON |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM300GA163D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM181FAnlielectronics Тип | SEMIKRON |
Description: Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SEMITRANS-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 34 A | SEMIKRON INTERNATIONAL | - | 1 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | 4 | UL RECOGNIZED | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.32 Ω | 136 A | 800 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 800 pF | 700 W | ||
| SKM181F | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM200GB163DAnlielectronics Тип | SEMIKRON |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM200GB163D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM151ARAnlielectronics Тип | SEMIKRON |
Power Field-Effect Transistor, 48A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D15, SEMITRANS-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 48 A | SEMIKRON INTERNATIONAL | CASE D15 | 1 | - | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | - | UPPER | UNSPECIFIED | unknown | 4 | UL RECOGNIZED | R-XUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.12 Ω | 192 A | 500 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SKM151AR | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM50GB100DAnlielectronics Тип | SEMIKRON |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | -55 °C | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM50GB100D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM101ARAnlielectronics Тип | SEMIKRON |
Description: Power Field-Effect Transistor, 200A I(D), 50V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 200 A | SEMIKRON INTERNATIONAL | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.0035 Ω | 600 A | 50 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 4500 pF | 700 W | ||
| SKM101AR | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM100GB163DAnlielectronics Тип | SEMIKRON |
Description: Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM100GB163D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM141Anlielectronics Тип | SEMIKRON |
Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 60 A | SEMIKRON INTERNATIONAL | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.075 Ω | 240 A | 400 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 700 pF | 625 W | ||
| SKM141 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM100GAR163DAnlielectronics Тип | SEMIKRON |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM100GAR163D | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSKIIP 38AC12T4V1Anlielectronics Тип | Semikron |
MiniSKiip; IGBT Module; 1200V; 100A | SEMIKRON SKIIP 38AC12T4V1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Screw | - | 19 | - | - | Module | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | 150 °C | -40 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.2 kV | - | - | - | - | - | - | - | ||
| SKIIP 38AC12T4V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSKIIP 83 AHB 15T1Anlielectronics Тип | Semikron |
Diode, IGBT; 3-Phase Bridge/Braking Chopper; M8a | SEMIKRON SKIIP 83 AHB 15T1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Surface Mount | - | 17 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | 150 °C | -55 °C | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKIIP 83 AHB 15T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSKIIP81AHB15T1Anlielectronics Тип | Semikron |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKIIP81AHB15T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSKIIP 37NAB12T4V1Anlielectronics Тип | Semikron |
MiniSKiip; IGBT Module; 1200V; 100A | SEMIKRON SKIIP 37NAB12T4V1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | 28 | - | - | Module | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKIIP 37NAB12T4V1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSK30GH123Anlielectronics Тип | Semikron |
Power Igbt Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SK30GH123 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM214AAnlielectronics Тип | SEMIKRON |
Power Field-Effect Transistor, 125A I(D), 100V, 0.013ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D 70, SEMITRANS 2, 7 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 7 | SILICON | - | 125 A | SEMIKRON INTERNATIONAL | CASE D 70 | 2 | 150 °C | - | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X7 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | e2 | Yes | EAR99 | TIN SILVER | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | compliant | 7 | - | R-XUFM-X7 | Not Qualified | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.013 Ω | 375 A | 100 V | METAL-OXIDE SEMICONDUCTOR | 400 W | 2400 pF | 400 W | ||
| SKM214A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM111RZRAnlielectronics Тип | SEMIKRON |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | 4 | SILICON | - | 200 A | SEMIKRON INTERNATIONAL | - | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | EAR99 | - | - | - | 8541.29.00.95 | UPPER | UNSPECIFIED | compliant | - | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.0085 Ω | 600 A | 100 V | METAL-OXIDE SEMICONDUCTOR | 700 W | 2700 pF | 700 W | ||
| SKM111RZR | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSKM400GA163DAnlielectronics Тип | SEMIKRON |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | SEMIKRON INTERNATIONAL | - | - | - | - | - | , | - | - | Active | - | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SKM400GA163D |
Индекс :
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