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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипP70F7R5EN-5600Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P70F7R5EN-5600 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP72LF7R5SLAnlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 72 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 0.0074 Ω | 288 A | 75 V | 215 mJ | METAL-OXIDE SEMICONDUCTOR | 217 W | - | - | 230 pF | - | ||
| P72LF7R5SL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP60B6ENAnlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Description: Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P60B6EN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK2818Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 15 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | - | , | - | - | Obsolete | - | No | - | - | - | e0 | - | EAR99 | TIN LEAD | - | - | - | - | 240 | unknown | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | ||
| 2SK2818 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипT30G40Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | - | , | - | - | Obsolete | - | No | 7 MHz | - | - | e0 | - | EAR99 | TIN LEAD | - | - | - | - | 240 | unknown | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 200 W | 30 A | 80 | - | - | ||
| T30G40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SC1466Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | - | , | - | - | Obsolete | - | No | 10 MHz | - | - | e0 | - | EAR99 | TIN LEAD | - | - | - | - | 240 | unknown | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 30 W | 3 A | 4 | - | - | ||
| 2SC1466 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK2193Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor, 12A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ITO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 12 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | No | - | 190 ns | 90 ns | e0 | - | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.7 Ω | 36 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | 50 W | ||
| 2SK2193 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP9B40HP2Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Description: Power Field-Effect Transistor, 9A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FB, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 9 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | EAR99 | - | LOW NOISE | - | SINGLE | GULL WING | - | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 0.8 Ω | 36 A | 400 V | 37 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| P9B40HP2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK2281Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 10 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | 230 ns | 70 ns | e0 | - | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSIP-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.1 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | 25 W | ||
| 2SK2281 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP54B4SN-5071Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
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Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P54B4SN-5071 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK2672Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Description: Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTO-3P, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 5 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-3P | No | - | 350 ns | 100 ns | e0 | - | EAR99 | TIN LEAD | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 2.8 Ω | 10 A | 900 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 80 W | - | - | - | 80 W | ||
| 2SK2672 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP105LF4QNAnlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P105LF4QN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP4B60HP2F-5071Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P4B60HP2F-5071 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK2664Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 3 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | 230 ns | 70 ns | e0 | No | EAR99 | TIN LEAD | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 240 | unknown | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 4.7 Ω | 6 A | 900 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | 50 W | ||
| 2SK2664 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP1B52HP2Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | - | - | - | - | , | - | - | Active | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P1B52HP2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP40B6SL-5071Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P40B6SL-5071 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2SK1861Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Description: Power Field-Effect Transistor, 4A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 4 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 2 | 1 | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | 121 ns | 57 ns | e0 | - | EAR99 | TIN LEAD | - | 8541.29.00.95 | SINGLE | GULL WING | 240 | unknown | 3 | R-PSSO-G2 | Not Qualified | SINGLE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.6 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 10 W | - | - | - | 10 W | ||
| 2SK1861 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP32B12SN-5071Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P32B12SN-5071 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP20B12SL-5071Anlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P20B12SL-5071 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипP98LF6QNAnlielectronics Тип | Shindengen Electronic Manufacturing Co Ltd |
Power Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 98 A | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | - | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 0.0033 Ω | 392 A | 60 V | 280 mJ | METAL-OXIDE SEMICONDUCTOR | 217 W | - | - | 267 pF | - | ||
| P98LF6QN |
Индекс :
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