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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case | Center-to-center distance | Drain Current-Max (ID) | Electrical mounting | Features of semiconductor devices | Gross weight | hFEMin | Ihs Manufacturer | Kind of package | Leads | Max. forward impulse current | Max. forward voltage | Max. off-state voltage | Mechanical mounting | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Rohs Code | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of bridge rectifier | Version | JESD-609 Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Additional Feature | HTS Code | Max Power Dissipation | Terminal Position | Terminal Form | Depth | Reach Compliance Code | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Collector Emitter Voltage (VCEO) | Max Collector Current | JEDEC-95 Code | Hole diameter | Gain | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Transition Frequency | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Load current | Quantity | Collector Current-Max (IC) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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  | Mfr. ТипBF964Anlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | - | - | - | 0.03 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | - | - | - | - | Transferred | - | - | No | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.225 W | - | - | - | - | - | ||
| BF964 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPU09N05Anlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, 9A I(D), 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 9 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | TO-251 | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 3 | - | R-PSIP-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | TO-251 | - | - | - | 0.15 Ω | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPU09N05 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPB30N03LAnlielectronics Тип | Siemens |
Power Field-Effect Transistor, 30A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 2 | SILICON | - | - | - | 30 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOGIC LEVEL COMPATIBLE | - | - | SINGLE | GULL WING | - | unknown | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.028 Ω | - | 120 A | 30 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPB30N03L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPD30N03Anlielectronics Тип | Siemens |
Power Field-Effect Transistor, 30A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 2 | SILICON | - | - | - | 30 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | GULL WING | - | unknown | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | 0.015 Ω | - | 120 A | 30 V | 250 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPD30N03 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSPB46N03Anlielectronics Тип | Siemens |
Power Field-Effect Transistor, 46A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 2 | SILICON | - | - | - | 46 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-263 | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | GULL WING | - | unknown | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | 0.015 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPB46N03 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBF979SAnlielectronics Тип | Siemens |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | - | , | - | - | Transferred | - | - | No | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | 0.16 W | - | - | 0.05 A | - | - | ||
| BF979S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSS82CAnlielectronics Тип | Siemens |
CoC and 2-years warranty / RFQ for pricing
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BSS82C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBFP183Anlielectronics Тип | Siemens |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | 4 | - | - | - | - | - | - | - | - | 50 | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | 450 mW | - | - | - | - | - | - | - | - | - | - | - | - | - | 12 V | 65 mA | - | - | 20 dB | - | - | 8 GHz | - | - | - | - | - | - | - | - | - | - | ||
| BFP183 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPU28N03Anlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, 28A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 28 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | 0.023 Ω | - | 112 A | 30 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPU28N03 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPU14N05Anlielectronics Тип | Siemens |
Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 14 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | 0.1 Ω | - | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPU14N05 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPU28N05LAnlielectronics Тип | Siemens |
Power Field-Effect Transistor, 28A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 28 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOGIC LEVEL COMPATIBLE | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.05 Ω | - | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPU28N05L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPTFA241301FAnlielectronics Тип | Siemens |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | - | - | - | - | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 200 °C | - | , | - | - | Transferred | - | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 438 W | - | - | - | - | - | ||
| PTFA241301F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSM181FAnlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 4 | SILICON | - | - | - | 34 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | - | UPPER | UNSPECIFIED | - | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.32 Ω | - | 136 A | 800 V | - | METAL-OXIDE SEMICONDUCTOR | 700 W | - | - | - | 800 pF | 700 W | ||
| BSM181F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSPU02N60Anlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, 2A I(D), 600V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 2 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | 5.5 Ω | - | 8 A | 600 V | 135 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPU02N60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSM151Anlielectronics Тип | Siemens |
Power Field-Effect Transistor, 48A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 4 | SILICON | - | - | - | 48 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | - | UPPER | UNSPECIFIED | - | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | - | - | - | - | - | 0.12 Ω | - | 192 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 625 W | - | - | - | 700 pF | 625 W | ||
| BSM151 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBSM191FAnlielectronics Тип | Siemens |
28A, 1000V, 0.42ohm, N-CHANNEL, Si, POWER, MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 4 | SILICON | - | - | - | 28 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | UPPER | UNSPECIFIED | - | unknown | - | - | R-PUFM-X4 | Not Qualified | SINGLE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | - | - | - | - | 28 A | 0.42 Ω | - | 110 A | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | 700 W | - | - | - | 500 pF | 700 W | ||
| BSM191F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUZ71ALAnlielectronics Тип | Siemens |
Description: Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 13 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | No | - | 160 ns | 125 ns | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | - | - | - | 0.12 Ω | - | 52 A | 50 V | 6 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | 150 pF | 40 W | ||
| BUZ71AL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUZ54AAnlielectronics Тип | Siemens |
Power Field-Effect Transistor, 4.5A I(D), 1000V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 2 | SILICON | - | - | - | 4.5 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | 150 °C | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Obsolete | - | - | No | - | 690 ns | 205 ns | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | 8541.29.00.95 | - | BOTTOM | PIN/PEG | - | unknown | - | - | O-MBFM-P2 | Not Qualified | SINGLE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-204AA | - | - | - | 2.6 Ω | - | 18 A | 1000 V | 850 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | 40 pF | 125 W | ||
| BUZ54A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSPP30N03Anlielectronics Тип | Siemens |
Power Field-Effect Transistor, 30A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 3 | SILICON | - | - | - | 30 A | - | - | - | - | SIEMENS A G | - | - | - | - | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | SFM | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | TO-220AB | - | - | - | 0.023 Ω | - | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SPP30N03 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSS131Anlielectronics Тип | Siemens |
Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | steel | 50 g | 3 | SILICON | 1 | PWS-E flat | 138.5 ± 0.5; 162.0 ± 0.5 mm | 0.1 A | screw | glass passivated | 50.97 | - | SIEMENS A G | bulk | M6 screws | 2.5kA | 1.43V | 1.2kV | screw | - | 150 °C | PLASTIC/EPOXY | SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | No | 35.5*30.5*16/200 | - | - | three-phase | module - slim | e0 | EAR99 | metal fan grille 170 x 170 | Tin/Lead (Sn/Pb) | - | - | - | - | DUAL | GULL WING | 6 mm | unknown | 3 | CECC | R-PDSO-G3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | fixing hole - 5.0 | - | - | 16 Ω | - | - | 240 V | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | 248A | grille rings - 8 | - | 5 pF | - | ||
| BSS131 |
Индекс :
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