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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипIXTH15N45AAnlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 15 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 200 W | ||
| IXTH15N45A | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXTH42N20MBAnlielectronics Тип | Littelfuse Inc |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 42 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 300 W | ||
| IXTH42N20MB | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF2305Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 20V, 0.089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.089 Ω | 10 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF2305 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXTH42N15MBAnlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 42 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 300 W | ||
| IXTH42N15MB | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXTH31N15MBAnlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 31 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 150 W | ||
| IXTH31N15MB | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF1006AAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 200 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | HIGH RELIABILITY | SINGLE | GULL WING | - | compliant | - | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0055 Ω | 800 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF1006A | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSPL4004Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 75A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 75 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.0045 Ω | 720 A | 40 V | 1215 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSPL4004 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF6114Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 60 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.014 Ω | 240 A | 60 V | 235 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF6114 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSFCJ1012Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | GOOD-ARK ELECTRONICS CO LTD | - | - | - | , | - | - | Active | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSFCJ1012 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF2122EAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 7A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3X3-8L, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 7 A | GOOD-ARK ELECTRONICS CO LTD | 2 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | ULTRA LOW RESISTANCE | DUAL | FLAT | - | compliant | - | R-PDSO-F8 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.03 Ω | 42 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF2122E | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF1502G5Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 6A I(D), 150V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 6 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-G4 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.2 Ω | 24 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF1502G5 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF1009Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 75 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.008 Ω | 400 A | 100 V | 540 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF1009 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF4414Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 8.5 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-G8 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.026 Ω | 50 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF4414 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSPL5508Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 110 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.008 Ω | 440 A | 55 V | 576 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSPL5508 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXTH31N15MAAnlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 31 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 150 W | ||
| IXTH31N15MA | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF7509Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 80A I(D), 75V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 80 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.008 Ω | 320 A | 75 V | 375 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF7509 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF6808AAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 84A I(D), 68V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3/2 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 84 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | HIGH RELIABILITY, ULTRA LOW RESISTANCE | SINGLE | GULL WING | - | compliant | - | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.008 Ω | 310 A | 68 V | 400 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF6808A | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF2312Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Power Field-Effect Transistor, 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | - | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.033 Ω | 13.5 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF2312 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSSF20NS60FAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 20 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | EAR99 | - | HIGH RELIABILITY | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | - | N-CHANNEL | TO-220AB | 0.19 Ω | 80 A | 600 V | 248 mJ | METAL-OXIDE SEMICONDUCTOR | - | ||
| SSF20NS60F | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипH342848Anlielectronics Тип | Littelfuse Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| H342848 |
Индекс :
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