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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Lifecycle Status | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | RoHS | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Reverse Recovery Time | JEDEC-95 Code | RMS Current (Irms) | Peak Non-Repetitive Surge Current | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Max Junction Temperature (Tj) | Rds On Max | Feedback Cap-Max (Crss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIXTH21N45Anlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 21 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | - | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | ||
| IXTH21N45 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF2814EH2Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Power Field-Effect Transistor, 8A I(D), 20V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSSOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 8 A | GOOD-ARK ELECTRONICS CO LTD | 2 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-G8 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | 0.02 Ω | 25 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF2814EH2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMCC220-28IO3Anlielectronics Тип | Littelfuse |
Dual Series - Dual High Power Thyristor Modules, 2800V, W102
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Production (Last Updated: 4 years ago) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 543 A | 5 kA | - | - | - | - | - | - | 125 °C | - | - | ||
| MCC220-28IO3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXTA42N15TAnlielectronics Тип | Littelfuse |
Gen1 Series - 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options, TO-263AA, RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Production (Last Updated: 4 years ago) | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | 200 W | - | - | 150 V | - | 100 ns | - | - | - | - | - | - | - | - | - | - | 45 mΩ | - | ||
| IXTA42N15T | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXTP2N100Anlielectronics Тип | Littelfuse |
High Voltage Series - 100V - 1500V N-Channel Standard Power MOSFETs, TO-220, RoHS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Production (Last Updated: 4 years ago) | - | - | - | - | - | - | - | - | - | - | - | - | Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | 100 W | - | - | 1 kV | - | 800 ns | - | - | - | - | - | - | - | - | - | - | 7 Ω | - | ||
| IXTP2N100 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF1009Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 75 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | TO-220AB | - | - | 0.008 Ω | 400 A | 100 V | 540 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF1009 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF4414Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 8.5 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | EAR99 | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-G8 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | 0.026 Ω | 50 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF4414 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXTH31N20MAAnlielectronics Тип | Littelfuse Inc |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 31 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | - | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | ||
| IXTH31N20MA | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXFN17N80Anlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 17 A | LITTELFUSE INC | 1 | - | - | , | - | - | Active | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | SINGLE | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 325 W | - | - | - | ||
| IXFN17N80 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSFM3008Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 50A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3/2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 50 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | TO-252 | - | - | 0.008 Ω | 200 A | 30 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSFM3008 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF3909Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Small Signal Field-Effect Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | GOOD-ARK ELECTRONICS CO LTD | - | - | - | - | - | - | Active | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSF3909 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF1090DAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 15 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | TO-252 | - | - | 0.09 Ω | 60 A | 100 V | 142 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF1090D | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF2300G2Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | GOOD-ARK ELECTRONICS CO LTD | - | - | - | , | - | - | Active | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSF2300G2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF2301AAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | P-CHANNEL | - | - | - | - | 0.065 Ω | 20 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF2301A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF2312Anlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Power Field-Effect Transistor, 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | 0.033 Ω | 13.5 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF2312 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF4N60FAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 4A I(D), 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 4 A | GOOD-ARK ELECTRONICS CO LTD | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | EAR99 | - | ULTRA LOW RESISTANCE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | - | N-CHANNEL | - | TO-220AB | - | - | 2.1 Ω | 16 A | 600 V | 220 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF4N60F | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSE3139KAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | GOOD-ARK ELECTRONICS CO LTD | - | - | - | , | - | - | Active | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SE3139K | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXTH27N40MAAnlielectronics Тип | Littelfuse Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | 27 A | LITTELFUSE INC | 1 | 150 °C | - | , | - | - | Active | - | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | SINGLE | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | ||
| IXTH27N40MA | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSX3139KAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Description: Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 0.66 A | GOOD-ARK ELECTRONICS CO LTD | 2 | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | NOT SPECIFIED | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | P-CHANNEL | - | - | - | - | 0.52 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.15 W | - | - | 15 pF | ||
| SX3139K | |||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSF2122EAnlielectronics Тип | Suzhou Good-Ark Electronics Co Ltd |
Power Field-Effect Transistor, 7A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3X3-8L, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 7 A | GOOD-ARK ELECTRONICS CO LTD | 2 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | EAR99 | - | ULTRA LOW RESISTANCE | DUAL | FLAT | - | compliant | - | R-PDSO-F8 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | 0.03 Ω | 42 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| SSF2122E |
Индекс :
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