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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Part Life Cycle Code | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | Reach Compliance Code | Configuration | Operating Mode | Polarity/Channel Type | FET Technology | Power Dissipation-Max (Abs) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSD304DEAnlielectronics Тип | Telcom Semiconductor Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 0.05 A | TELCOM SEMICONDUCTOR INC | 1 | 125 °C | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | - | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.3 W | ||
| SD304DE | ||||||||||||||||||||||
| | Mfr. Тип2N4446Anlielectronics Тип | Telcom Semiconductor Inc |
Transistor,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | TELCOM SEMICONDUCTOR INC | - | 200 °C | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | - | - | N-CHANNEL | JUNCTION | 0.4 W | ||
| 2N4446 | ||||||||||||||||||||||
| | Mfr. ТипVN2222LLAnlielectronics Тип | Telcom Semiconductor Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 0.099 A | TELCOM SEMICONDUCTOR INC | 1 | 150 °C | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | SINGLE | ENHANCEMENT MODE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.4 W | ||
| VN2222LL | ||||||||||||||||||||||
| | Mfr. ТипSD5000JAnlielectronics Тип | Telcom Semiconductor Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 0.05 A | TELCOM SEMICONDUCTOR INC | - | 85 °C | Obsolete | No | e0 | EAR99 | Tin/Lead (Sn/Pb) | unknown | - | ENHANCEMENT MODE | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | - | ||
| SD5000J |
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