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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Surge forward current | Transition Frequency-Nom (fT) | Voltage drop | JESD-609 Code | ECCN Code | Type | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Height | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипJ113Anlielectronics Тип | Micro Electronics Ltd |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92DD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | MICRO ELECTRONICS LTD | - | - | 150 °C | PLASTIC/EPOXY | TO-92DD, 3 PIN | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | - | - | unknown | - | O-PBCY-W3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | TO-92 | 100 Ω | - | - | JUNCTION | 0.4 W | - | - | 5 pF | - | - | - | ||
| J113 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVN2222LLAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | 0.15 A | ZETEX PLC | - | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Transferred | No | - | - | - | e0 | EAR99 | - | TIN LEAD | - | BOTTOM | WIRE | 235 | - | unknown | 10 | O-PBCY-W3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-92 | 7.5 Ω | - | 60 V | METAL-OXIDE SEMICONDUCTOR | 0.4 W | - | - | 5 pF | - | - | - | ||
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMMBF5484Anlielectronics Тип | EDI Diodes (Electronic Devices Inc) |
Description: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 19 g | 3 | SILICON | 1 | - | ELECTRONIC DEVICES INC | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | 400 A | - | 1.2 V | - | EAR99 | diode bridge KBPC series | - | - | DUAL | GULL WING | - | 28 | unknown | - | R-PDSO-G3 | Not Qualified | 1 phase | DEPLETION MODE | - | - | N-CHANNEL | - | - | - | - | JUNCTION | - | - | - | - | - | 11 | 28 | ||
| MMBF5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2N5484Anlielectronics Тип | Micro Electronics Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92DD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | MICRO ELECTRONICS LTD | - | - | 150 °C | PLASTIC/EPOXY | TO-92DD, 3 PIN | ROUND | CYLINDRICAL | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | - | unknown | - | O-PBCY-T3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-92 | - | - | - | JUNCTION | 0.31 W | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | ||
| 2N5484 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMP6A13GTCAnlielectronics Тип | Zetex / Diodes Inc |
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.39ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | 2.3 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | SOT-223, 4 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | - | not_compliant | 40 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.39 Ω | 7.8 A | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXMP6A13GTC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMC3AM832TCAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 10 | SILICON | - | 2.9 A | ZETEX PLC | 1 | 2 | - | PLASTIC/EPOXY | 3 X 2 MM, MLP832, 10 PIN | RECTANGULAR | FLATPACK | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | LOW THRESHOLD | QUAD | FLAT | 260 | - | unknown | 40 | R-PQFP-F10 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | 0.12 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 2.45 W | - | - | - | - | - | - | ||
| ZXMC3AM832TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC327BPAnlielectronics Тип | Zetex / Diodes Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | ZETEX PLC | - | 1 | 150 °C | - | , | - | - | Obsolete | No | - | 100 MHz | - | e0 | EAR99 | - | TIN LEAD | - | - | - | 235 | - | unknown | 10 | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | 0.625 W | 0.8 A | 250 | - | - | - | - | ||
| BC327BP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипTR801Anlielectronics Тип | General Diode Corp |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | GENERAL DIODE CORP | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TR801 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMN3AM832TCAnlielectronics Тип | Zetex / Diodes Inc |
Description: Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 10 | SILICON | - | 2.9 A | ZETEX PLC | 1 | 2 | 150 °C | PLASTIC/EPOXY | 3 X 2 MM, MLP832, 10 PIN | RECTANGULAR | FLATPACK | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | - | QUAD | FLAT | 260 | - | unknown | 40 | R-PQFP-F10 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.12 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | - | - | ||
| ZXMN3AM832TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMHC3A01T8TCAnlielectronics Тип | Zetex / Diodes Inc |
Description: Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | 2.7 A | ZETEX PLC | 1 | 4 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | - | compliant | 40 | R-PDSO-G8 | Not Qualified | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | 0.12 Ω | 14.5 A | 30 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXMHC3A01T8TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXM64P035GTCAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 3.8A I(D), 35V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | 3.8 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | SOT-223, 4 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | LOW THRESHOLD | DUAL | GULL WING | 260 | - | not_compliant | 40 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.075 Ω | - | 35 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXM64P035GTC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипFCX651Anlielectronics Тип | Zetex / Diodes Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | - | - | - | ZETEX PLC | 1 | 1 | - | - | , | - | - | Obsolete | No | - | 175 MHz | - | e0 | EAR99 | - | TIN LEAD | - | - | - | 235 | - | unknown | 10 | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | 1.5 W | 2 A | 100 | - | - | - | - | ||
| FCX651 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXM64N03XAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MSOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | 3.9 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | MSOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | No | - | - | - | e0 | EAR99 | - | TIN LEAD | - | DUAL | GULL WING | 235 | - | unknown | 10 | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.06 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXM64N03X | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCY59CPAnlielectronics Тип | Zetex / Diodes Inc |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | - | - | - | ZETEX PLC | - | 1 | 175 °C | - | , | - | - | Obsolete | No | - | 250 MHz | - | e0 | EAR99 | - | TIN LEAD | - | - | - | 235 | - | unknown | 10 | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | 0.4 W | 0.2 A | 60 | - | - | - | - | ||
| BCY59CP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMN2B01FTCAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | ZETEX PLC | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| ZXMN2B01FTC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUZXMN6A11GTAAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | 3.8 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | SOT-223, 4 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | LOW THRESHOLD | DUAL | GULL WING | 260 | - | not_compliant | 40 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.14 Ω | - | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| UZXMN6A11GTA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMP10A17E6TCAnlielectronics Тип | Zetex / Diodes Inc |
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 6 | SILICON | - | 1.3 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | SOT-23, 6 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | - | unknown | 40 | R-PDSO-G6 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.35 Ω | 7.7 A | 100 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXMP10A17E6TC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMN7A11GTCAnlielectronics Тип | Zetex / Diodes Inc |
Power Field-Effect Transistor, 3.8A I(D), 70V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4-PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | 3.8 A | ZETEX PLC | 1 | 1 | - | PLASTIC/EPOXY | SOT-223, 4-PIN | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | MATTE TIN | LOW THRESHOLD; FAST SWITCHING | DUAL | GULL WING | 260 | - | not_compliant | 40 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-261AA | 0.13 Ω | 10 A | 70 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXMN7A11GTC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMN6A11GFTCAnlielectronics Тип | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | 2.7 A | ZETEX PLC | 1 | 1 | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | Matte Tin (Sn) | - | DUAL | GULL WING | 260 | - | not_compliant | 40 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.14 Ω | - | 60 V | METAL-OXIDE SEMICONDUCTOR | 3.9 W | - | - | - | - | - | - | ||
| ZXMN6A11GFTC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипZXMHC6A07T8TCAnlielectronics Тип | Zetex / Diodes Inc |
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SM8, 8 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | 1.8 A | ZETEX PLC | 1 | 4 | - | PLASTIC/EPOXY | SM8, 8 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | Yes | - | - | - | e3 | EAR99 | - | MATTE TIN | - | DUAL | GULL WING | 260 | - | compliant | 40 | R-PDSO-G8 | Not Qualified | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | 0.3 Ω | 8.7 A | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| ZXMHC6A07T8TC |
Индекс :
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