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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Date Of Intro | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer Package Code | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBLF7G24L-100Anlielectronics Тип | NXP Semiconductors |
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 28 A | NXP SEMICONDUCTORS | - | - | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | - | EAR99 | - | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 2 | - | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | S BAND | - | ||
| BLF7G24L-100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMPB13XNEAnlielectronics Тип | NXP Semiconductors |
8A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | - | 8 A | NXP SEMICONDUCTORS | - | 1 | 1 | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | - | e3 | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.016 Ω | 32 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PMPB13XNE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBSN274Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR 250 mA, 270 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 0.25 A | NXP SEMICONDUCTORS | - | - | 1 | 150 °C | PLASTIC/EPOXY | PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN | ROUND | CYLINDRICAL | Obsolete | TO-92 | No | - | - | - | EAR99 | - | - | - | BOTTOM | THROUGH-HOLE | - | unknown | - | 3 | - | O-PBCY-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-92 | 8 Ω | - | 270 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | 15 pF | - | - | ||
| BSN274 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK456-60BAnlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR 51 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 51 A | NXP SEMICONDUCTORS | - | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | 380 ns | 130 ns | - | EAR99 | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.03 Ω | 200 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 400 pF | - | 150 W | ||
| BUK456-60B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF6V2300NAnlielectronics Тип | NXP Semiconductors |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | - | - | NXP SEMICONDUCTORS | - | 3 | 1 | 225 °C | PLASTIC/EPOXY | PLASTIC, ROHS COMPLIANT, WB-4, CASE-1486-03, 4 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | e3 | EAR99 | MATTE TIN | - | - | DUAL | FLAT | 260 | not_compliant | 40 | - | - | R-PDFM-F4 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | - | N-CHANNEL | TO-270AA | - | - | 110 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | ULTRA HIGH FREQUENCY BAND | - | ||
| MRF6V2300N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHP11N50EAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 10.4 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 10.4 A | NXP SEMICONDUCTORS | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | EAR99 | - | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.6 Ω | 42 A | 500 V | 676 mJ | METAL-OXIDE SEMICONDUCTOR | 156 W | - | - | - | ||
| PHP11N50E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF10M6LS200Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR RF POWER, FET, FET RF Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | , | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLF10M6LS200 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHB125N06LTAnlielectronics Тип | NXP Semiconductors |
Description: 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 75 A | NXP SEMICONDUCTORS | SOT404 | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | No | - | - | - | EAR99 | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.008 Ω | 240 A | 55 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | ||
| PHB125N06LT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNX138BKSAnlielectronics Тип | NXP Semiconductors |
SMALL SIGNAL, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | 2016-06-15 | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| NX138BKS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHP87N03TAnlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR 75 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 75 A | NXP SEMICONDUCTORS | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | - | - | EAR99 | - | ESD PROTECTED | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.0105 Ω | 240 A | 30 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PHP87N03T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPHD50N06LTAnlielectronics Тип | NXP Semiconductors |
50A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-428, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 50 A | NXP SEMICONDUCTORS | SOT428 | - | 1 | - | PLASTIC/EPOXY | PLASTIC, SOT-428, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-63 | - | - | - | - | EAR99 | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | - | compliant | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.024 Ω | 200 A | 55 V | 80 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PHD50N06LT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPI4884Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | - | 12 A | NXP SEMICONDUCTORS | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | unknown | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.0105 Ω | 45 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | ||
| PI4884 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN2R0-60BSAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 120 A, 60 V, 0.002 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 120 A | NXP SEMICONDUCTORS | - | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.002 Ω | 1076 A | 60 V | 913 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PSMN2R0-60BS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF2425M7L140Anlielectronics Тип | NXP Semiconductors |
Description: RF POWER, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | , | - | - | Transferred | - | Yes | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLF2425M7L140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHP3N20EAnlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR 3.5 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 3.5 A | NXP SEMICONDUCTORS | - | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | EAR99 | - | FAST SWITCHING | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 1.5 Ω | 14 A | 200 V | 25 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | 50 pF | - | 20 W | ||
| PHP3N20E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK9556-30Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 24 A | NXP SEMICONDUCTORS | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | EAR99 | - | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.056 Ω | 96 A | 30 V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| BUK9556-30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPHP24N03TAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 24 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | 24 A | NXP SEMICONDUCTORS | - | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | - | - | EAR99 | - | ESD PROTECTED | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.056 Ω | 96 A | 30 V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PHP24N03T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMPB23XNEAnlielectronics Тип | NXP Semiconductors |
Description: 7A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 6 | SILICON | - | 7 A | NXP SEMICONDUCTORS | - | 1 | 1 | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | - | e3 | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.022 Ω | 24 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| PMPB23XNE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF2022-90Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-2, FET RF Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | - | 12 A | NXP SEMICONDUCTORS | - | - | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | EAR99 | - | - | - | DUAL | FLAT | - | unknown | - | 2 | - | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | ULTRA HIGH FREQUENCY BAND | - | ||
| BLF2022-90 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBF964Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | - | - | NXP SEMICONDUCTORS | - | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | - | ROUND | DISK BUTTON | Obsolete | - | - | - | - | - | EAR99 | - | - | - | RADIAL | FLAT | - | unknown | - | - | - | O-CRDB-F4 | Not Qualified | SINGLE | DUAL GATE, DEPLETION MODE | - | - | N-CHANNEL | - | - | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | VERY HIGH FREQUENCY BAND | - | ||
| BF964 |
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