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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипBUK416-200BEAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 63 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | 63 A | NXP SEMICONDUCTORS | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | EAR99 | - | - | - | UPPER | SOLDER LUG | - | unknown | - | - | - | R-PUFM-D4 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 0.045 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| BUK416-200BE | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN2R0-60BSAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 120 A, 60 V, 0.002 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 120 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.002 Ω | 1076 A | 60 V | 913 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PSMN2R0-60BS | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF2425M7L140Anlielectronics Тип | NXP Semiconductors |
Description: RF POWER, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | , | - | - | Transferred | - | Yes | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLF2425M7L140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLF25M612Anlielectronics Тип | NXP Semiconductors |
RF POWER, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | 1 | - | - | - | - | - | - | Transferred | - | Yes | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLF25M612 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMPB29XNEAnlielectronics Тип | NXP Semiconductors |
5A, 30V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 5 A | NXP SEMICONDUCTORS | 1 | 1 | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | - | e3 | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.033 Ω | 12 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PMPB29XNE | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMXB65ENEAnlielectronics Тип | NXP Semiconductors |
SMALL SIGNAL, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | , | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PMXB65ENE | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPHP5N40EAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 6.5 A | NXP SEMICONDUCTORS | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | 205 ns | 65 ns | - | EAR99 | - | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 1 Ω | 26 A | 400 V | 290 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | 70 pF | 100 W | ||
| PHP5N40E | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипMRF21120R6Anlielectronics Тип | NXP Semiconductors |
Description: RF Power Field-Effect Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | Obsolete | - | Yes | - | - | - | EAR99 | - | - | - | - | - | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MRF21120R6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN5R0-100BSAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 120 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.005 Ω | 680 A | 100 V | 537 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PSMN5R0-100BS | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNVT8416A1UKAnlielectronics Тип | NXP Semiconductors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| NVT8416A1UK | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMPB10XNEAnlielectronics Тип | NXP Semiconductors |
9A, 20V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 9 A | NXP SEMICONDUCTORS | 1 | 1 | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | - | e3 | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.014 Ω | 36 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PMPB10XNE | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHP42N03TAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 42 A, 30 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 42 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | EAR99 | - | ESD PROTECTED | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.026 Ω | 168 A | 30 V | 60 mJ | METAL-OXIDE SEMICONDUCTOR | 86 W | - | - | ||
| PHP42N03T | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHP23NQ15TAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 23 A | NXP SEMICONDUCTORS | - | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.09 Ω | 92 A | 150 V | 180 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PHP23NQ15T | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBLS7G2731LS-220PAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR RF SMALL SIGNAL, FET, FET RF Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | 225 °C | - | - | - | - | Active | - | Yes | - | - | - | EAR99 | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| BLS7G2731LS-220P | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHD11N03LTAnlielectronics Тип | NXP Semiconductors |
10.3A, 30V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 10.3 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | EAR99 | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.15 Ω | 41 A | 30 V | 25 mJ | METAL-OXIDE SEMICONDUCTOR | 33 W | - | - | ||
| PHD11N03LT | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипPMBFJ211Anlielectronics Тип | NXP Semiconductors |
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SOT-23, 3 PIN, FET General Purpose Small Signal
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | - | NXP SEMICONDUCTORS | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT-23 | - | - | - | e3 | EAR99 | TIN | - | - | DUAL | GULL WING | - | compliant | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | - | - | - | 25 V | - | JUNCTION | 0.25 W | - | - | ||
| PMBFJ211 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPSMN017-30KLAnlielectronics Тип | NXP Semiconductors |
Description: TRANSISTOR 10 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 10 A | NXP SEMICONDUCTORS | - | 1 | 150 °C | PLASTIC/EPOXY | PLASTIC, MS-012, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.025 Ω | 40 A | 30 V | 26 mJ | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | ||
| PSMN017-30KL | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPHB10N40Anlielectronics Тип | NXP Semiconductors |
10.7A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 10.7 A | NXP SEMICONDUCTORS | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.55 Ω | 43 A | 400 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PHB10N40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBUK9540-100AAnlielectronics Тип | NXP Semiconductors |
TRANSISTOR 39 A, 100 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 4 Weeks | NO | 3 | SILICON | 39 A | NXP SEMICONDUCTORS | - | 1 | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | - | - | e3 | EAR99 | TIN | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.043 Ω | 159 A | 100 V | 182 mJ | METAL-OXIDE SEMICONDUCTOR | 138 W | - | - | ||
| BUK9540-100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипPMPB23XNEAnlielectronics Тип | NXP Semiconductors |
Description: 7A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | YES | 6 | SILICON | 7 A | NXP SEMICONDUCTORS | 1 | 1 | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | - | - | e3 | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.022 Ω | 24 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| PMPB23XNE |
Индекс :
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