- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Manufacturer Package Code | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Highest Frequency Band |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип2SK580LAnlielectronics Тип | Renesas Electronics Corporation |
Description: TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,1.5A I(D),TO-252VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | - | 1.5 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | - | - | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | ||
| 2SK580L | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRQA0008RXTL-EAnlielectronics Тип | Renesas Electronics Corporation |
Description: 2.4A, N-CHANNEL, Si, POWER, MOSFET, UPAK, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 4 | SILICON | 2.4 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | Yes | EAR99 | - | - | DUAL | FLAT | NOT SPECIFIED | compliant | NOT SPECIFIED | 4 | R-PDSO-F4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 10 W | - | ||
| RQA0008RXTL-E | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK2113YY-TLAnlielectronics Тип | Renesas Electronics Corporation |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | GALLIUM ARSENIDE | 0.06 A | RENESAS TECHNOLOGY CORP | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | unknown | - | - | R-PDSO-G3 | Not Qualified | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | 3.5 V | - | - | - | ULTRA HIGH FREQUENCY BAND | ||
| 2SK2113YY-TL | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK3355-ZAnlielectronics Тип | Renesas Electronics Corporation |
Description: 83A, 60V, 0.0088ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 83 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-220 | No | e0 | - | EAR99 | TIN LEAD | - | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0088 Ω | 332 A | 60 V | 562 mJ | METAL-OXIDE SEMICONDUCTOR | 100 W | - | ||
| 2SK3355-Z | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUPA1951TE-T1Anlielectronics Тип | Renesas Electronics Corporation |
UPA1951TE-T1
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| UPA1951TE-T1 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRQK0202RGDQATL-EAnlielectronics Тип | Renesas Electronics Corporation |
3800mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 3.8 A | RENESAS ELECTRONICS CORP | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-59A | Yes | e6 | Yes | EAR99 | TIN BISMUTH | - | DUAL | GULL WING | - | compliant | - | 3 | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | DEPLETION MODE | - | SWITCHING | N-CHANNEL | - | 0.085 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | ||
| RQK0202RGDQATL-E | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRJK0362DSP-00-J0Anlielectronics Тип | Renesas Electronics Corporation |
Description: 16A, 30V, 0.0099ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | SILICON | 16 A | RENESAS TECHNOLOGY CORP | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | Yes | - | Yes | EAR99 | - | - | DUAL | GULL WING | - | unknown | - | 8 | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.0099 Ω | 128 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | - | ||
| RJK0362DSP-00-J0 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипUPA2753GR-E2Anlielectronics Тип | Renesas Electronics Corporation |
Description: UPA2753GR-E2
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| UPA2753GR-E2 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK2359Anlielectronics Тип | Renesas Electronics Corporation |
Description: 7A, 450V, 0.0009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PACKAGE-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 7 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.0009 Ω | 28 A | 450 V | 17 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | - | ||
| 2SK2359 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRQK0202RGDQATL-HAnlielectronics Тип | Renesas Electronics Corporation |
Description: 3800mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 3.8 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SC-59A, MPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | SC-59A | Yes | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | 3 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.085 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | ||
| RQK0202RGDQATL-H | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRQK0303MGDQATL-EAnlielectronics Тип | Renesas Electronics Corporation |
3700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 3.7 A | RENESAS ELECTRONICS CORP | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-59A | Yes | e6 | Yes | EAR99 | Tin/Bismuth (Sn/Bi) | - | DUAL | GULL WING | 260 | compliant | 20 | 3 | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.07 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | ||
| RQK0303MGDQATL-E | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK3204Anlielectronics Тип | Renesas Electronics Corporation |
Description: 15A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, MP-10, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 15 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | No | e0 | - | EAR99 | TIN LEAD | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.05 Ω | 45 A | 60 V | 22.5 mJ | METAL-OXIDE SEMICONDUCTOR | 1.8 W | - | ||
| 2SK3204 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRQK0303MGDQATL-HAnlielectronics Тип | Renesas Electronics Corporation |
3700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 3.7 A | RENESAS ELECTRONICS CORP | - | - | 1 | - | PLASTIC/EPOXY | SC-59A, MPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | SC-59A | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | compliant | - | 3 | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.07 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | ||
| RQK0303MGDQATL-H | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRJK0331DPBAnlielectronics Тип | Renesas Electronics Corporation |
N Channel Power MOSFET, LFPAK, /Embossed Tape
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | RENESAS ELECTRONICS CORP | PTZZ0005DA | - | - | - | - | , | - | - | Obsolete | LFPAK | Yes | - | No | 5A002 | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | 5 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RJK0331DPB | ||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRQK0608BQDQSTL-EAnlielectronics Тип | Renesas Electronics Corporation |
3.2A, 60V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, SC-62, UPAK-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 3 | SILICON | 3.2 A | RENESAS ELECTRONICS CORP | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Active | SC-62 | Yes | e6 | Yes | EAR99 | TIN BISMUTH | - | SINGLE | FLAT | - | compliant | - | 4 | R-PSSO-F3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.195 Ω | 10 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1.5 W | - | ||
| RQK0608BQDQSTL-E | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Тип2SK2206Anlielectronics Тип | Renesas Electronics Corporation |
Description: 0.022ohm, POWER, FET, TO-220CFM, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | - | 45 A | RENESAS TECHNOLOGY CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220CF | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE | - | - | - | N-CHANNEL | - | 0.022 Ω | - | - | - | METAL-OXIDE SEMICONDUCTOR | 35 W | - | ||
| 2SK2206 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипRJL5013DPE-00-J3Anlielectronics Тип | Renesas Electronics Corporation |
14A, 500V, N-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK(S)-(1), 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 14 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SC-83, LDPAK(S)-(1), 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-83 | - | - | - | EAR99 | - | LOW LEAKAGE CURRENT | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | 42 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 100 W | - | ||
| RJL5013DPE-00-J3 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипFS5ASJ-3-T13Anlielectronics Тип | Renesas Electronics Corporation |
5A, 150V, 0.37ohm, N-CHANNEL, Si, POWER, MOSFET, SC-63, MP-3A, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 5 A | RENESAS ELECTRONICS CORP | - | - | 1 | - | PLASTIC/EPOXY | SC-63, MP-3A, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | SC-63 | - | - | - | EAR99 | - | - | SINGLE | GULL WING | - | compliant | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.37 Ω | 20 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | ||
| FS5ASJ-3-T13 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип2SK3434-ZJAnlielectronics Тип | Renesas Electronics Corporation |
48A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 2 | SILICON | 48 A | RENESAS ELECTRONICS CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | MP-25ZJ, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | D2PAK | No | e0 | No | EAR99 | TIN LEAD | - | SINGLE | GULL WING | - | unknown | - | 3 | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-263AB | 0.031 Ω | 120 A | 60 V | 78 mJ | METAL-OXIDE SEMICONDUCTOR | 56 W | - | ||
| 2SK3434-ZJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFP2N12LAnlielectronics Тип | Renesas Electronics Corporation |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFP2N12L |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ