- Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | hFEMin | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Turn-on Time-Max (ton) | Voltage Rated | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | HTS Code | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Polarity | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Polarity/Channel Type | Transistor Type | Max Collector Current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипSTC03DE170Anlielectronics Тип | STMicroelectronics |
TRANS ESBT 1700V 3A TO-247-4L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Matte Tin (Sn) | 125°C | -65°C | Gate Driver | - | 1.7kV | - | SINGLE | - | - | - | 3A | - | STC03D | 4 | - | - | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 100W | 3A | 3.5 | - | - | - | - | - | - | No | - | ROHS3 Compliant | Contains Lead | ||
| STC03DE170 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC04IE170HPAnlielectronics Тип | STMicroelectronics |
Emitter Switched Bipolar Transistor 4-Pin(4 Tab) TO-247 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 38 Weeks | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | - | e3 | - | Active | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 150°C | -40°C | Gate Driver | - | - | 50W | - | - | - | - | 4A | - | STC04I | 3 | - | - | NPN | - | Single | - | 50W | - | SWITCHING | - | NPN - Emitter Switched Bipolar | 8A | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| STC04IE170HP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC03DE170HVAnlielectronics Тип | STMicroelectronics |
Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 125°C | -40°C | Gate Driver | - | - | - | SINGLE | - | - | - | 3A | - | STC03D | 3 | - | - | NPN | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | - | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 100W | 3A | 10 | - | - | - | 20.15mm | 15.75mm | 5.15mm | No | - | ROHS3 Compliant | Lead Free | ||
| STC03DE170HV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC08IE120HVAnlielectronics Тип | STMicroelectronics |
Gate Drivers Swtch Bi Transistr ESBT 1200 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | 1200V 1.2kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -40°C | Gate Driver | - | - | - | SINGLE | - | NOT SPECIFIED | not_compliant | 8A | NOT SPECIFIED | STC08I | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 208W | 8A | 5 | 1200V | - | - | 20.15mm | 15.75mm | 5.15mm | - | - | ROHS3 Compliant | - | ||
| STC08IE120HV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC03DE170HPAnlielectronics Тип | STMicroelectronics |
Hybrid Emitter Switched Bipolar Transistor 4-Pin(4 Tab) TO-247HP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | 5 | - | - | 1 | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 125°C | -40°C | Gate Driver | - | - | 35.7W | - | - | - | - | 3A | - | STC03D | 3 | - | - | NPN | - | Single | - | - | - | SWITCHING | - | NPN - Emitter Switched Bipolar | 6A | - | - | - | - | - | - | - | - | 10 | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| STC03DE170HP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTP08IE120F4Anlielectronics Тип | STMicroelectronics |
TRANS BIPO EMITTER SW TO-220FP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-220-4 Full Pack | - | 4 | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | 1200V 1.2kV | Tube | ESBT® | - | - | Obsolete | 3 (168 Hours) | 4 | EAR99 | - | 150°C | -40°C | Gate Driver | - | - | - | SINGLE | - | 245 | - | 8A | 40 | STP08I | 3 | - | - | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | ISOLATED | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 21W | 8A | 5 | - | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| STP08IE120F4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIRFM150Anlielectronics Тип | Thomson-CSF Compsants Specific |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | 34 A | - | THOMSON-CSF COMPSANTS SPECIFIC | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | - | e0 | - | - | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFM150 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTU26NM50Anlielectronics Тип | STMicroelectronics |
26A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 26 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | MAX220, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.12 Ω | 104 A | 500 V | 740 mJ | METAL-OXIDE SEMICONDUCTOR | 192 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STU26NM50 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTB90NF03L-1Anlielectronics Тип | STMicroelectronics |
Description: 90A, 30V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 90 A | - | STMICROELECTRONICS | - | 1 | 175 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | TO-262AA | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | - | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-262AA | 0.0065 Ω | 360 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB90NF03L-1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTU13NB60Anlielectronics Тип | STMicroelectronics |
12.6A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 12.6 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | MAX220, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.45 Ω | 50.4 A | 600 V | 800 mJ | METAL-OXIDE SEMICONDUCTOR | 160 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STU13NB60 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTP4NC50Anlielectronics Тип | STMicroelectronics |
Description: 3.5A, 500V, 2.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 3.5 A | - | STMICROELECTRONICS | 1 | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 2.7 Ω | 14 A | 500 V | 210 mJ | METAL-OXIDE SEMICONDUCTOR | 80 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STP4NC50 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTP4N90FIAnlielectronics Тип | STMicroelectronics |
2.3A, 900V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 2.3 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | SFM | Yes | 290 ns | - | - | - | e3 | Yes | - | - | - | EAR99 | MATTE TIN | - | - | - | 8541.29.00.95 | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | N-CHANNEL | - | - | TO-220AB | 3.5 Ω | 16 A | 900 V | 190 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | 55 pF | 40 W | - | - | - | - | - | - | - | ||
| STP4N90FI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTD3NB30T4Anlielectronics Тип | STMicroelectronics |
3.2A, 300V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | 3.2 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | DPAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252AA | No | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | - | SINGLE | GULL WING | - | not_compliant | - | - | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-252AA | 2 Ω | 12.8 A | 300 V | 190 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STD3NB30T4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTB85NF55Anlielectronics Тип | STMicroelectronics |
80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | 80 A | - | STMICROELECTRONICS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | D2PAK | Yes | - | - | - | - | e3 | Yes | - | - | - | EAR99 | Matte Tin (Sn) | - | - | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | 4 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-263AB | 0.008 Ω | 320 A | 55 V | 980 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB85NF55 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTB20NM50FD-1Anlielectronics Тип | STMicroelectronics |
20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, TABLESS TO-220, I2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 20 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | TO-262AA | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | - | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-262AA | 0.25 Ω | 80 A | 500 V | 700 mJ | METAL-OXIDE SEMICONDUCTOR | 192 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB20NM50FD-1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTD17N06LT4Anlielectronics Тип | STMicroelectronics |
Description: 17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | 17 A | - | STMICROELECTRONICS | - | 1 | 175 °C | PLASTIC/EPOXY | TO-252, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252AA | No | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | - | SINGLE | GULL WING | - | not_compliant | - | - | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-252AA | 0.085 Ω | 68 A | 60 V | 60 mJ | METAL-OXIDE SEMICONDUCTOR | 55 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STD17N06LT4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTB210NF02Anlielectronics Тип | STMicroelectronics |
120A, 20V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | 120 A | - | STMICROELECTRONICS | - | 1 | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | D2PAK | Yes | - | - | - | - | e3 | Yes | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | - | SINGLE | GULL WING | - | not_compliant | - | - | - | 4 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-263AB | 0.0032 Ω | 480 A | 20 V | 2300 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB210NF02 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTB200NF04Anlielectronics Тип | STMicroelectronics |
Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,120A I(D),TO-263AB
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | - | 120 A | - | STMICROELECTRONICS | - | 1 | 175 °C | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 310 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB200NF04 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTW7NA100Anlielectronics Тип | STMicroelectronics |
7A, 1000V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 7 A | - | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | 8541.29.00.95 | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | N-CHANNEL | - | - | TO-247 | 1.7 Ω | 28 A | 1000 V | 800 mJ | METAL-OXIDE SEMICONDUCTOR | 190 W | - | - | - | - | 190 W | - | - | - | - | - | - | - | ||
| STW7NA100 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFL1N20LAnlielectronics Тип | Thomson Consumer Electronics |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | 1 A | - | THOMSON CONSUMER ELECTRONICS | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | - | e0 | - | - | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RFL1N20L |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ