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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | hFEMin | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Transition Frequency-Nom (fT) | Type of connector | Voltage Rated | Packaging | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Applications | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Polarity | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Polarity/Channel Type | Transistor Type | Max Collector Current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Collector-Emitter Voltage-Max | Profile | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
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  | Mfr. ТипSTC03DE170Anlielectronics Тип | STMicroelectronics |
TRANS ESBT 1700V 3A TO-247-4L
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Matte Tin (Sn) | 125°C | -65°C | Gate Driver | 1.7kV | - | SINGLE | - | - | - | 3A | - | STC03D | 4 | - | - | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 100W | 3A | 3.5 | - | - | - | - | - | No | - | ROHS3 Compliant | Contains Lead | ||
| STC03DE170 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC04IE170HPAnlielectronics Тип | STMicroelectronics |
Emitter Switched Bipolar Transistor 4-Pin(4+Tab) TO-247 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 38 Weeks | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | - | e3 | - | Active | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 150°C | -40°C | Gate Driver | - | 50W | - | - | - | - | 4A | - | STC04I | 3 | - | - | NPN | - | Single | - | 50W | - | SWITCHING | - | NPN - Emitter Switched Bipolar | 8A | - | - | - | - | - | - | - | - | 4 | - | - | - | - | - | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| STC04IE170HP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC03DE170HVAnlielectronics Тип | STMicroelectronics |
Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 125°C | -40°C | Gate Driver | - | - | SINGLE | - | - | - | 3A | - | STC03D | 3 | - | - | NPN | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | - | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 100W | 3A | 10 | - | - | 20.15mm | 15.75mm | 5.15mm | No | - | ROHS3 Compliant | Lead Free | ||
| STC03DE170HV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC08IE120HVAnlielectronics Тип | STMicroelectronics |
Gate Drivers Swtch Bi Transistr ESBT 1200 V
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 1200V 1.2kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -40°C | Gate Driver | - | - | SINGLE | - | NOT SPECIFIED | not_compliant | 8A | NOT SPECIFIED | STC08I | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | - | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 208W | 8A | 5 | 1200V | - | 20.15mm | 15.75mm | 5.15mm | - | - | ROHS3 Compliant | - | ||
| STC08IE120HV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTC03DE170HPAnlielectronics Тип | STMicroelectronics |
Hybrid Emitter Switched Bipolar Transistor 4-Pin(4+Tab) TO-247HP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-247-4 | - | 4 | - | - | - | - | - | - | - | - | 5 | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 1700V 1.7kV | Tube | ESBT® | e3 | - | Obsolete | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 125°C | -40°C | Gate Driver | - | 35.7W | - | - | - | - | 3A | - | STC03D | 3 | - | - | NPN | - | Single | - | - | - | SWITCHING | - | NPN - Emitter Switched Bipolar | 6A | - | - | - | - | - | - | - | - | 10 | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| STC03DE170HP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTP08IE120F4Anlielectronics Тип | STMicroelectronics |
TRANS BIPO EMITTER SW TO-220FP-4
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-220-4 Full Pack | - | 4 | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 1200V 1.2kV | Tube | ESBT® | - | - | Obsolete | 3 (168 Hours) | 4 | EAR99 | - | 150°C | -40°C | Gate Driver | - | - | SINGLE | - | 245 | - | 8A | 40 | STP08I | 3 | - | - | - | SINGLE WITH BUILT-IN FET AND DIODE | - | - | - | ISOLATED | SWITCHING | NPN | NPN - Emitter Switched Bipolar | - | - | - | - | - | - | - | 21W | 8A | 5 | - | - | - | - | - | No | - | ROHS3 Compliant | - | ||
| STP08IE120F4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипBCV26Anlielectronics Тип | STMicroelectronics |
Description: BCV26, PDSO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | - | - | - | - | - | - | - | - | STMICROELECTRONICS | - | - | - | 150 °C | - | PDSO-3 | - | - | Active | - | No | - | - | 200 MHz | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | DARLINGTON | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 0.3 W | 0.5 A | 20000 | - | - | - | - | - | - | - | - | - | ||
| BCV26 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTW7NC90ZAnlielectronics Тип | STMicroelectronics |
6A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 1 | - | - | - | 6 A | - | - | STMICROELECTRONICS | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | Yes | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-247 | 1.9 Ω | 24 A | 900 V | 315 mJ | METAL-OXIDE SEMICONDUCTOR | 160 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STW7NC90Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTP22NM60Anlielectronics Тип | STMicroelectronics |
22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | 1 | socket | 2x41 | 2.54mm | 22 A | THT | - | STMICROELECTRONICS | female | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | 2.54mm | straight | - | pin strips | - | - | - | e3 | Yes | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.25 Ω | 80 A | 600 V | 650 mJ | METAL-OXIDE SEMICONDUCTOR | 192 W | - | - | - | beryllium copper | - | - | - | - | - | - | - | ||
| STP22NM60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCW31Anlielectronics Тип | STMicroelectronics |
BCW31, PDSO-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | - | - | 1 | - | - | - | - | - | - | STMICROELECTRONICS | - | - | - | 150 °C | - | PDSO-3 | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.3 W | 0.1 A | 110 | - | - | - | - | - | - | - | - | - | ||
| BCW31 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTP4NC50FPAnlielectronics Тип | STMicroelectronics |
3.5A, 500V, 2.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | - | - | - | - | 3.5 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | - | - | - | - | - | - | - | e3 | Yes | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | N-CHANNEL | - | - | TO-220AB | 2.7 Ω | 14 A | 500 V | 210 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STP4NC50FP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTP3NA80FIAnlielectronics Тип | STMicroelectronics |
2A, 800V, 4.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOWATT220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | - | - | - | - | 2 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | No | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | N-CHANNEL | - | - | TO-220AB | 4.5 Ω | 12.5 A | 800 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STP3NA80FI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTB8NC50Anlielectronics Тип | STMicroelectronics |
Description: 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | - | - | - | - | 8 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | GULL WING | - | not_compliant | - | - | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.85 Ω | 32 A | 500 V | 600 mJ | METAL-OXIDE SEMICONDUCTOR | 135 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STB8NC50 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTB5NK50ZAnlielectronics Тип | STMicroelectronics |
4.4A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | - | - | - | - | 4.4 A | - | - | STMICROELECTRONICS | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | - | - | - | - | e3 | Yes | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | GULL WING | - | not_compliant | - | - | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 1.5 Ω | 17.6 A | 500 V | 130 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STB5NK50Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTU11NB60Anlielectronics Тип | STMicroelectronics |
Description: 11A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, MAX220, 3 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | - | - | - | - | 11 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | MAX220, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | TIN LEAD | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.6 Ω | 44 A | 600 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 160 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STU11NB60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTD7NS20Anlielectronics Тип | STMicroelectronics |
7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | - | - | - | - | 7 A | - | - | STMICROELECTRONICS | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | TO-252, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252AA | Yes | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | GULL WING | 260 | not_compliant | - | 30 | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-252AA | 0.4 Ω | 28 A | 200 V | 60 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STD7NS20 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTF12NK65ZAnlielectronics Тип | STMicroelectronics |
Power MOSFETs, N-channel 650 V, 0.57 Ohm, 10 A, TO-220FP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | - | - | - | - | 10 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | ROHS COMPLIANT, TO-220FP, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | MATTE TIN | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | 3 | R-PSFM-T3 | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | ISOLATED | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.7 Ω | 40 A | 650 V | 225 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STF12NK65Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSTD2NB40Anlielectronics Тип | STMicroelectronics |
Description: 2A, 400V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 2 | SILICON | - | - | - | - | 2 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | TO-252 | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | GULL WING | - | unknown | - | - | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-252 | 4 Ω | 8 A | 400 V | 26 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STD2NB40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSTD2NB40-1Anlielectronics Тип | STMicroelectronics |
2A, 400V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | 3 | SILICON | - | - | - | - | 2 A | - | - | STMICROELECTRONICS | - | - | 1 | 150 °C | PLASTIC/EPOXY | TO-251, IPAK-3 | RECTANGULAR | IN-LINE | Obsolete | TO-251AA | Yes | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | - | NOT SPECIFIED | - | 3 | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-251AA | 4 Ω | 8 A | 400 V | 26 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | - | - | - | - | - | - | ||
| STD2NB40-1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипRFP18N10Anlielectronics Тип | Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | NO | - | - | - | - | - | - | - | 18 A | - | - | THOMSON CONSUMER ELECTRONICS | - | - | 1 | 150 °C | - | - | - | - | Obsolete | - | No | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | SINGLE | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | - | - | - | - | - | - | - | - | ||
| RFP18N10 |
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