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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitors series | Case - inch | Case - mm | Drain Current-Max (ID) | Ihs Manufacturer | Kind of capacitor | Kind of channel | Mounting | Nominal voltage | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Polarisation | Transition Frequency-Nom (fT) | Type of capacitor | Type of transistor | Wire cross-section | Tolerance | ECCN Code | Type | HTS Code | Capacitance | Terminal Position | Terminal Form | Depth | Reach Compliance Code | JESD-30 Code | Qualification Status | Dielectric | Configuration | Operating Mode | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Power Gain-Min (Gp) | Height | Width |
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  | Mfr. ТипSD5000JAnlielectronics Тип | Teledyne Technologies Inc |
Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | SILICON | - | - | - | - | 0.05 A | TELEDYNE COMPONENTS | - | - | - | - | 4 | 85 °C | CERAMIC, METAL-SEALED COFIRED | IN-LINE, R-CDIP-T16 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | THROUGH-HOLE | - | unknown | R-CDIP-T16 | Not Qualified | - | COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | - | 70 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | 0.5 pF | - | - | - | - | - | ||
| SD5000J | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSD304DEAnlielectronics Тип | Teledyne Technologies Inc |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | - | - | - | - | 0.05 A | TELEDYNE COMPONENTS | - | - | - | - | 1 | 125 °C | METAL | CYLINDRICAL, O-MBCY-W3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | - | - | EAR99 | - | 8541.29.00.75 | - | BOTTOM | WIRE | - | unknown | O-MBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | DUAL GATE, ENHANCEMENT MODE | AMPLIFIER | N-CHANNEL | TO-206AF | - | 25 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ULTRA HIGH FREQUENCY BAND | 1.2 W | 13 dB | - | - | ||
| SD304DE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC109CAnlielectronics Тип | Bharat Electronics Ltd |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 1 | KGM | 1812 | 4532 | - | BHARAT ELECTRONICS LTD | MLCC | - | SMD | - | - | 175 °C | - | - | - | - | Contact Manufacturer | - | 150 MHz | ceramic | - | - | ±10% | EAR99 | - | - | 10µF | - | - | - | unknown | - | - | X5R | SINGLE | - | - | NPN | - | - | - | - | 0.6 W | 0.2 A | 420 | - | - | - | - | - | - | ||
| BC109C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBC108Anlielectronics Тип | Bharat Electronics Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 1 | - | - | - | - | BHARAT ELECTRONICS LTD | - | - | - | - | - | 175 °C | - | , | - | - | Contact Manufacturer | - | 150 MHz | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | SINGLE | - | - | NPN | - | - | - | - | 0.6 W | 0.2 A | 110 | - | - | - | - | - | - | ||
| BC108 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипVN2222LLAnlielectronics Тип | Teledyne Technologies Inc |
Description: Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 3 | SILICON | 1 | - | - | - | 0.15 A | TELEDYNE COMPONENTS | - | enhanced | THT | AC: 380; DC: 240 V | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Obsolete | unipolar | - | - | N-MOSFET | up to 2.5 mm2 | - | EAR99 | Limit switch series 3SE3 with push roller | 8541.29.00.95 | - | BOTTOM | WIRE | 26 mm | unknown | O-PBCY-W3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | TO-226AA | 7.5 Ω | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | 5 pF | - | 1 W | - | 64 mm | 32 mm | ||
| VN2222LL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипBCY59IXAnlielectronics Тип | Bharat Electronics Ltd |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | - | - | 1 | - | - | - | - | BHARAT ELECTRONICS LTD | - | - | - | - | - | 175 °C | - | , | - | - | Contact Manufacturer | - | 125 MHz | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | SINGLE | - | - | NPN | - | - | - | - | 0.6 W | 0.2 A | - | - | - | - | - | - | - | ||
| BCY59IX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSD5402CYAnlielectronics Тип | Teledyne Technologies Inc |
Small Signal Field-Effect Transistor, 0.05A I(D), 15V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 14 | SILICON | - | - | - | - | 0.05 A | TELEDYNE COMPONENTS | - | - | - | - | 4 | 70 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G14 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | unknown | R-PDSO-G14 | Not Qualified | - | COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | SWITCHING | N-CHANNEL | - | 70 Ω | 15 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | 0.5 pF | - | - | - | - | - | ||
| SD5402CY |
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