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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Lifecycle Status | Surface Mount | Number of Terminals | Transistor Element Material | Case/Package | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | RoHS | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | ECCN Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Polarity | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипSML50J50Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 50 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.085 Ω | 200 A | 500 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML50J50 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIP137HVIG-DESCAnlielectronics Тип | TT Electronics |
Adjustable Voltage Regulator - Isolated, TO-257-3, Non-Compliant
Сборник данных
Сравнение
| Min.:1 Mult.:1 | Production (Last Updated: 3 years ago) | - | - | - | TO-257-3 | - | - | - | - | - | - | - | - | - | - | Non-Compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | Negative | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IP137HVIG-DESC | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTIP160Anlielectronics Тип | TT Electronics Resistors |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | - | 150 °C | - | , | - | - | Obsolete | - | - | No | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | DARLINGTON | - | - | - | NPN | - | - | - | - | - | - | 50 W | 10 A | 200 | ||
| TIP160 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML30J70Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 70A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 70 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.04 Ω | 280 A | 300 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML30J70 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип3N205Anlielectronics Тип | Swampscott Electronics Co Inc |
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-72, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 0.05 A | SWAMPSCOTT ELECTRONICS CO INC | 1 | 200 °C | METAL | CYLINDRICAL, O-MBCY-W4 | ROUND | CYLINDRICAL | Contact Manufacturer | TO-72 | - | No | - | e0 | EAR99 | TIN LEAD | BOTTOM | WIRE | - | unknown | - | 4 | O-MBCY-W4 | Not Qualified | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | TO-72 | - | - | 25 V | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | - | - | ||
| 3N205 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTIP642Anlielectronics Тип | TT Electronics Resistors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | - | 175 °C | - | - | - | - | Obsolete | - | - | No | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | DARLINGTON | - | - | - | NPN | - | - | - | - | - | - | 175 W | 10 A | 500 | ||
| TIP642 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML80J28Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 28A I(D), 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 28 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.28 Ω | 112 A | 800 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML80J28 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTIP75Anlielectronics Тип | TT Electronics Resistors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | 1 | 140 °C | - | - | - | - | Obsolete | - | - | No | 10 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 2 W | 3 A | 30 | ||
| TIP75 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML40J53Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 53A I(D), 400V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 53 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.07 Ω | 212 A | 400 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML40J53 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBD937Anlielectronics Тип | TT Electronics Resistors |
Description: Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | 1 | 150 °C | - | , | - | - | Obsolete | - | - | No | 3 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 30 W | 3 A | 40 | ||
| BD937 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML100J22Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 22A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 22 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.43 Ω | 88 A | 1000 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML100J22 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML10J144Anlielectronics Тип | TT Electronics Resistors |
Description: Power Field-Effect Transistor, 144A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 144 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.011 Ω | 576 A | 100 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML10J144 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML12040JVRAnlielectronics Тип | TT Electronics Resistors |
Description: Power Field-Effect Transistor, 26A I(D), 1200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 26 A | TT ELECTRONICS PLC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-D4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | Yes | - | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | SOLDER LUG | - | compliant | - | - | R-PUFM-D4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.4 Ω | 104 A | 1200 V | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML12040JVR | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML20J122Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 112A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 112 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.019 Ω | 448 A | 200 V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML20J122 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML100J19Anlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 19 A | TT ELECTRONICS PLC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Not Recommended | - | - | No | - | - | EAR99 | - | UPPER | UNSPECIFIED | NOT SPECIFIED | compliant | NOT SPECIFIED | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.5 Ω | 76 A | 1000 V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML100J19 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML60M75JVRAnlielectronics Тип | TT Electronics Resistors |
Power Field-Effect Transistor, 62A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227, 4 PIN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | 4 | SILICON | - | 62 A | TT ELECTRONICS PLC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | Yes | - | e1 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | - | compliant | - | - | R-PUFM-X4 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.075 Ω | 248 A | 600 V | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML60M75JVR | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIRCLR2010LF-01-R050-FTAnlielectronics Тип | TT Electronics Resistors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRCLR2010LF-01-R050-FT | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипSML5010JNAnlielectronics Тип | TT Electronics Resistors |
Description: Power Field-Effect Transistor, Silicon, Metal-oxide Semiconductor FET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | SILICON | - | - | TT ELECTRONICS PLC | - | - | - | , | - | - | Obsolete | - | - | - | - | - | EAR99 | - | - | - | - | unknown | - | - | - | Not Qualified | - | - | ENHANCEMENT MODE | ISOLATED | SWITCHING | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | ||
| SML5010JN | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипBDX74Anlielectronics Тип | TT Electronics Resistors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | 1 | - | - | , | - | - | Obsolete | - | - | No | 1.5 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 75 W | - | 15 | ||
| BDX74 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTIP665Anlielectronics Тип | TT Electronics Resistors |
Transistor
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | NO | - | - | - | - | TT ELECTRONICS PLC | - | 175 °C | - | , | - | - | Obsolete | - | - | No | 10 MHz | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | compliant | - | - | - | - | - | DARLINGTON | - | - | - | NPN | - | - | - | - | - | - | 150 W | 20 A | 500 | ||
| TIP665 |
Индекс :
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