| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Material | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Electrical mounting | Ihs Manufacturer | Kind of connector | Number of Words | Number of Words Code | Operating conditions | Operating Temperature-Max | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Permissible load | Purpose | Rohs Code | Row pitch | Spatial orientation | Supply Voltage-Nom (Vsup) | Type of connector | Packaging | Part Status | ECCN Code | Composition | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Profile | Self Refresh | Diameter | Length | Width |
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  | Mfr. ТипM12L128168A-6TGAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 54 | 5.4 ns | 166 MHz | socket | 2x44 | 2.54mm | - | THT | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | female | 8388608 words | 8000000 | - | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | - | - | Yes | 2.54mm | straight | 3.3 V | pin strips | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | beryllium copper | YES | - | 22.22 mm | 10.16 mm | ||
| M12L128168A-6TG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM13S2561616A-5TGAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Description: DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | blue glass fiber rod in plastic sheath | 66 | 0.75 ns | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | maximum bending radius - 30 mm | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | TSOP2 | static tensile forces - not more than 2 kN; compressive forces - not more than 0.5 kN/cm | for pulling cables in cable ducts, boxes, pipes, etc. | Yes | - | - | 2.5 V | - | Bulk | Active | EAR99 | Glass rod | blue | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | unknown | NOT SPECIFIED | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | DDR1 DRAM | - | - | - | FOUR BANK PAGE BURST | - | YES | outer on the sheath - 4 mm | 22.22 mm | 10.16 mm | ||
| M13S2561616A-5TG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM15T2G16128A-DEBG2LAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
DDR DRAM, 128MX16, CMOS, PBGA96, BGA-96
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 96 | - | 933 MHz | - | - | - | 2017-08-08 | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 134217728 words | 128000000 | - | 85 °C | PLASTIC/EPOXY | VFBGA | VFBGA, | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Active | - | - | - | - | - | - | 1.35 V | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.5V NOMINAL SUPPLY | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B96 | - | 1.45 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.25 mA | 128MX16 | - | 1 mm | 16 | 0.02 A | 2147483648 bit | COMMON | DDR3L DRAM | - | 8 | 8 | MULTI BANK PAGE BURST | - | YES | - | 13.5 mm | 7.5 mm | ||
| M15T2G16128A-DEBG2L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM12L64322A-6TG2SAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 2MX32, CMOS, PDSO86, TSOPII-86
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 86 | - | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 2097152 words | 2000000 | - | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | - | - | - | - | - | 3.3 V | - | - | - | EAR99 | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.5 mm | unknown | NOT SPECIFIED | - | R-PDSO-G86 | - | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | - | 2MX32 | - | 1.2 mm | 32 | - | 67108864 bit | - | SYNCHRONOUS DRAM | - | - | - | FOUR BANK PAGE BURST | - | YES | - | 22.22 mm | 10.16 mm | ||
| M12L64322A-6TG2S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM10B11664A-35JAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Fast Page DRAM, 64KX16, 35ns, CMOS, PDSO40, SOJ-40
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 40 | 35 ns | - | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 65536 words | 64000 | - | 70 °C | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | 5 V | - | - | - | EAR99 | - | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | - | 1 | 1.27 mm | unknown | - | - | R-PDSO-J40 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.13 mA | 64KX16 | 3-STATE | 3.76 mm | 16 | 0.002 A | 1048576 bit | COMMON | FAST PAGE DRAM | 256 | - | - | FAST PAGE | - | NO | - | 26.04 mm | 10.16 mm | ||
| M10B11664A-35J | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM12L64322A-7TAnlielectronics Тип | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | - | 86 | 6 ns | 143 MHz | - | - | - | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 2097152 words | 2000000 | - | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | - | - | - | - | - | - | 3.3 V | - | - | - | EAR99 | - | - | - | 8542.32.00.02 | DUAL | GULL WING | - | - | 0.5 mm | unknown | - | - | R-PDSO-G86 | Not Qualified | - | COMMERCIAL | - | - | - | 0.285 mA | 2MX32 | 3-STATE | - | 32 | 0.002 A | 67108864 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | - | ||
| M12L64322A-7T |
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