| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипHY5DU12822CFP-D43Anlielectronics Тип | SK Hynix Inc |
DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.7 ns | 200 MHz | SK HYNIX INC | 67108864 words | 64000000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | - | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.01 A | 536870912 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 10 mm | ||
| HY5DU12822CFP-D43 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипH5TQ8G43BMR-RDCAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 2GX4, CMOS, PBGA78, FBGA-78
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 78 | - | 934.58 MHz | SK HYNIX INC | 2147483648 words | 2000000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | - | R-PBGA-B78 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.07 mA | 2GX4 | - | 1.2 mm | 4 | 0.064 A | 8589934592 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | NO | YES | 11.1 mm | 9 mm | ||
| H5TQ8G43BMR-RDC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGM71C4256BJ-60Anlielectronics Тип | SK Hynix Inc |
Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | 60 ns | - | SK HYNIX INC | 262144 words | 256000 | - | - | PLASTIC/EPOXY | SOJ | - | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | 5 V | e0 | - | - | Tin/Lead (Sn/Pb) | - | - | DUAL | J BEND | - | - | 1.27 mm | compliant | - | - | R-PDSO-J20 | Not Qualified | - | - | - | - | - | - | 256KX4 | 3-STATE | - | 4 | - | 1048576 bit | COMMON | FAST PAGE DRAM | 512 | - | - | - | - | - | - | - | ||
| GM71C4256BJ-60 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY5DU283222AFP-36Anlielectronics Тип | SK Hynix Inc |
Description: DDR DRAM, 4MX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, FBGA-144
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 144 | 0.6 ns | 275 MHz | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 144 | S-PBGA-B144 | Not Qualified | 2.625 V | COMMERCIAL | 2.2 V | 1 | SYNCHRONOUS | 0.6 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.025 A | 134217728 bit | COMMON | DDR1 DRAM | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 12 mm | ||
| HY5DU283222AFP-36 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY5PS121621F-33Anlielectronics Тип | SK Hynix Inc |
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 0.5 ns | 345 MHz | SK HYNIX INC | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | No | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.28 | BOTTOM | BALL | - | - | 0.8 mm | unknown | - | - | R-PBGA-B84 | Not Qualified | - | COMMERCIAL | - | - | - | 0.335 mA | 32MX16 | 3-STATE | - | 16 | 0.004 A | 536870912 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | - | - | - | - | - | ||
| HY5PS121621F-33 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGM71V18163CLT-7Anlielectronics Тип | SK Hynix Inc |
Description: EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | 70 ns | - | SK HYNIX INC | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 50 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | - | 1MX16 | - | 1.2 mm | 16 | - | 16777216 bit | - | EDO DRAM | - | - | - | FAST PAGE WITH EDO | - | - | 20.95 mm | 10.16 mm | ||
| GM71V18163CLT-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHY5DU121622CLTP-JIAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 66 | 0.7 ns | 166 MHz | SK HYNIX INC | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 2.5 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | - | 32MX16 | 3-STATE | 1.194 mm | 16 | 0.01 A | 536870912 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.225 mm | 10.16 mm | ||
| HY5DU121622CLTP-JI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY57V121620T-HAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.3 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 536870912 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| HY57V121620T-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипH5TQ2G83MFR-G7CAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA82, HALOGEN FREE, FBGA-82
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 82 | 0.3 ns | 533 MHz | SK HYNIX INC | 268435456 words | 256000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA82,11X13,32 | BGA82,11X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.5 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | 82 | R-PBGA-B82 | Not Qualified | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | 0.294 mA | 256MX8 | 3-STATE | 1.2 mm | 8 | 0.013 A | 2147483648 bit | COMMON | DDR3 DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | - | YES | 13.3 mm | 12.2 mm | ||
| H5TQ2G83MFR-G7C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипH5TC4G83CFR-PBIAnlielectronics Тип | SK Hynix Inc |
DRAM Module, 512MX8, CMOS, PBGA78, FBGA-78
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 78 | - | - | SK HYNIX INC | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | Yes | 1.35 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 20 | - | R-PBGA-B78 | - | 1.45 V | INDUSTRIAL | 1.283 V | 1 | SYNCHRONOUS | - | 512MX8 | - | 1.2 mm | 8 | - | 4294967296 bit | - | DRAM MODULE | - | - | - | MULTI BANK PAGE BURST | - | YES | 11 mm | 7.5 mm | ||
| H5TC4G83CFR-PBI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY5V26CLF-HAnlielectronics Тип | SK Hynix Inc |
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 133 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 3.3 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 54 | R-PBGA-B54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.22 mA | 8MX16 | 3-STATE | 1.18 mm | 16 | 0.001 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 10.5 mm | 8.3 mm | ||
| HY5V26CLF-H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипH5TQ4G83CFR-TEIAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 512MX8, CMOS, PBGA78, FPBGA-78
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 78 | - | - | SK HYNIX INC | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | Yes | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | - | R-PBGA-B78 | - | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | - | 512MX8 | - | 1.2 mm | 8 | - | 4294967296 bit | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | - | YES | 11 mm | 7.5 mm | ||
| H5TQ4G83CFR-TEI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипH5DU2562GFR-K3CAnlielectronics Тип | SK Hynix Inc |
Description: DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.75 ns | 133 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.2 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.003 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 8 mm | ||
| H5DU2562GFR-K3C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипH5DU2562GFR-K3IAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 60 | 0.75 ns | 133 MHz | SK HYNIX INC | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VBGA | VBGA, BGA60,9X12,40/32 | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | e1 | - | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 1 mm | unknown | 20 | 60 | R-PBGA-B60 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.2 mA | 16MX16 | 3-STATE | 1 mm | 16 | 0.003 A | 268435456 bit | COMMON | DDR1 DRAM | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 12 mm | 8 mm | ||
| H5DU2562GFR-K3I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипHY57V281620ETP-7Anlielectronics Тип | SK Hynix Inc |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 143 MHz | SK HYNIX INC | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | - | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.19 mA | 8MX16 | 3-STATE | 1.194 mm | 16 | 0.002 A | 134217728 bit | COMMON | SYNCHRONOUS DRAM | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.238 mm | 10.16 mm | ||
| HY57V281620ETP-7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY57V561620FLTP-6Anlielectronics Тип | SK Hynix Inc |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | SK HYNIX INC | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 3.3 V | e6 | Yes | EAR99 | TIN BISMUTH | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.18 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 268435456 bit | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| HY57V561620FLTP-6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипGM71C4100CJ-70Anlielectronics Тип | SK Hynix Inc |
Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, SOJ-26
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | 70 ns | - | SK HYNIX INC | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ-26 | SOJ20/26,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.02 | DUAL | J BEND | - | - | 1.27 mm | compliant | - | - | R-PDSO-J20 | Not Qualified | - | COMMERCIAL | - | - | - | 0.1 mA | 4MX1 | 3-STATE | - | 1 | 0.001 A | 4194304 bit | SEPARATE | FAST PAGE DRAM | 1024 | - | - | - | - | NO | - | - | ||
| GM71C4100CJ-70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY57V641620Anlielectronics Тип | SK Hynix Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HY57V641620 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипH5TQ4G83AFR-TELAnlielectronics Тип | SK Hynix Inc |
DDR DRAM, 512MX8, 0.18ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 78 | 0.18 ns | 1066 MHz | SK HYNIX INC | 536870912 words | 512000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.35 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 78 | R-PBGA-B78 | Not Qualified | 1.45 V | OTHER | 1.283 V | 1 | SYNCHRONOUS | 0.175 mA | 512MX8 | 3-STATE | 1.2 mm | 8 | 0.011 A | 4294967296 bit | COMMON | DDR3L DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | - | YES | 11 mm | 9 mm | ||
| H5TQ4G83AFR-TEL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипHY5PS561621BFP-16Anlielectronics Тип | SK Hynix Inc |
Description: DDR DRAM, 16MX16, 0.25ns, CMOS, PBGA84, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 0.25 ns | 625 MHz | SK HYNIX INC | 16777216 words | 16000000 | 85 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 2 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 20 | 84 | R-PBGA-B84 | Not Qualified | 2.1 V | OTHER | 1.9 V | 1 | SYNCHRONOUS | 0.3 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 268435456 bit | COMMON | DDR2 DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | - | YES | 13 mm | 8 mm | ||
| HY5PS561621BFP-16 |
Индекс :
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