Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page27

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS816236DB-200V Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	21	-	Parallel	GSI Technology	-	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS816236DB	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	18 Mbit	4	-	205 mA, 210 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS816236DB-200V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D07BD-333I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	333 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342D07BD-333I	333 MHz	333 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	4 MWords	4000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	-	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 85 °C	Tray	GS8342D07BD	-	-	3A991.B.2.B	SigmaQuad-II+ B4	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	615 mA	-	Pipelined	4 M x 8	3-STATE	1.4 mm	8	20 Bit	SRAM	36 Mbit	0.215 A	33554432 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342D07BD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321E18AD-250 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	-	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	3.6 V	2.3 V	-	Synchronous	SyncBurst	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8321E18AD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	-	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8321E18AD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342QT37BGD-250I Anlielectronics Тип	GSI Technology	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	250 MHz	250 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	-	SMD/SMT	36 Bit	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342QT37BGD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	-	-	775 mA	0.45	-	1 M x 36	-	-	-	19 Bit	SRAM	-	-	36	Industrial	-	-	-	-	SRAM	-	-
GS8342QT37BGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342D37BD-333 Anlielectronics Тип	GSI Technology	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	-	-	Parallel	-	-	333 MHz	333 MHz	1.9 V	+ 70 C	-	1.7 V	0 C	-	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	-	1.8000 V	Commercial grade	0 to 85 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	775 mA	-	Pipelined	1 M x 36	-	-	-	18 Bit	-	36 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8342D37BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E32DGD-150 Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	150 MHz	-	-	+ 70 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS8161E32DGD	-	-	-	DCD Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	180 mA, 190 mA	7.5 ns	-	512 k x 32	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS8161E32DGD-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q10BGD-200I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	200 MHz	200 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	9 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q10BGD	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	565 mA	-	Pipelined	4 M x 9	-	-	-	-	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342Q10BGD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S18BD-333 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, BGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	333 MHz	DDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342S18BD-333	333 MHz	333 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.36	N	No	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaSIO DDR-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342S18BD	-	-	3A991.B.2.B	SigmaSIO DDR-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	COMMERCIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	605 mA	-	Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit	0.205 A	37748736 bit	Commercial	PARALLEL	SEPARATE	DDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342S18BD-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182D18BGD-200I Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	-	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182D18BGD-200I	200 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	3	-	SMD/SMT	-	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.18	Details	Yes	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II	-	-	-	Tray	GS8182D18BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	INDUSTRIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	365 mA	-	-	1 M x 18	-	1.4 mm	18	-	SRAM	-	-	18874368 bit	-	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182D18BGD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z18AGD-200 Anlielectronics Тип	GSI Technology	ZBT SRAM, 2MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	14	-	Parallel	GSI Technology	-	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z18AGD	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	185 mA, 220 mA	6.5 ns	Flow-Through/Pipelined	2 M x 18	-	-	-	21 Bit	SRAM	36 Mb	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8322Z18AGD-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q18BGE-250I Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	-	-	Parallel	-	-	250 MHz	-	-	+ 85 C	-	-	- 40 C	-	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1 A	-	-	4 M x 18	-	-	-	-	-	-	-	72	-	-	-	-	-	-	-	-
GS8672Q18BGE-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342DT19BGD-333I Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342DT19BGD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	615 mA	-	Pipelined	2 M x 18	-	-	-	-	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342DT19BGD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z36AGD-250I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, 5.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	14	-	Parallel	GSI Technology	-	250 MHz	-	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8322Z36AGD	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	4	-	250 mA, 305 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	-	-	-	-	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8322Z36AGD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84036CGB-200I Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 128K x 36 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	-	84	-	Parallel	-	-	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS84036CGB	-	-	-	Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	160 mA, 190 mA	6.5 ns	-	128 k x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS84036CGB-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82564Z18GB-250IV Anlielectronics Тип	GSI Technology	SRAM 1.8/2.5V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	-	10	-	Parallel	-	-	250 MHz	-	-	+ 100 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS82564Z18GB	-	-	-	NBT Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	450 mA, 540 mA	5.5 ns	-	16 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82564Z18GB-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82564Z36GB-250IV Anlielectronics Тип	GSI Technology	SRAM 1.8/2.5V 8M x 36 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	-	-	-	10	-	Parallel	-	-	250 MHz	-	-	+ 100 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	3.6 V	2.3 V	-	-	NBT SRAM	-	-	-	Tray	GS82564Z36GB	-	-	-	NBT Pipeline/Flow Through	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	490 mA, 590 mA	5.5 ns	-	8 M x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82564Z36GB-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS84018CB-166I Anlielectronics Тип	GSI Technology	SRAM 2.5 or 3.3V 256K x 18 4M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	YES	119	-	-	-	-	84	GSI TECHNOLOGY	Parallel	-	GS84018CB-166I	166 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.72	-	No	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS84018CB	-	-	3A991.B.2.B	Pipeline/Flow Through	-	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2.7 V	-	INDUSTRIAL	2.3 V	4 Mbit	-	SYNCHRONOUS	145 mA, 160 mA	7 ns	-	256 k x 18	-	1.99 mm	18	-	-	-	-	4718592 bit	-	PARALLEL	-	CACHE SRAM	-	-	22 mm	14 mm
GS84018CB-166I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS840Z36CGT-200 Anlielectronics Тип	GSI Technology	ZBT SRAM, 128KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	-	-	-	-	-	Parallel	-	-	200 MHz	-	-	+ 70 C	-	-	0 C	-	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.6 V	2.3 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4 Mbit	-	-	140 mA, 170 mA	6.5 ns	-	128 k x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS840Z36CGT-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672Q20BGE-400 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	400 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672Q20BGE	-	-	-	SigmaQuad-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.36 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672Q20BGE-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816118DGD-250IV Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	5.5 ns	-	-	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS816118DGD-250IV	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 100 C	-	1.7, 2.3 V	- 40 C	-	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.26	-	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	-	1.8, 2.5 V	Industrial grade	-40 to 100 °C	-	GS816118DGD	-	-	3A991.B.2.B	-	-	ALSO OPERATES AT 2.5V	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	2 V	-	INDUSTRIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.4 mm	18	20 Bit	-	18 Mbit	-	18874368 bit	Industrial	PARALLEL	-	CACHE SRAM	-	-	15 mm	13 mm
GS816118DGD-250IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS816236DB-200V,GS8342D07BD-333I,GS8321E18AD-250,GS8342QT37BGD-250I,GS8342D37BD-333.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)