Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page47

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS882Z36CGD-200IV Anlielectronics Тип	GSI Technology	ZBT SRAM, 256KX36, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	6.5 ns	GSI Technology	-	SDR	66	GSI TECHNOLOGY	Parallel	GSI Technology	GS882Z36CGD-200IV	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2, 2.7 V	+ 85 C	SDR	1.7, 2.3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.14	Details	Yes	FBGA	2.7 V	1.7 V	1.8 V	Synchronous	NBT SRAM	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS882Z36CGD	e1	Yes	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2 V	-	INDUSTRIAL	1.7 V	9 Mbit	4	SYNCHRONOUS	145 mA, 170 mA	6.5 ns	Flow-Through/Pipelined	256 k x 36	-	1.4 mm	36	18 Bit	SRAM	9 Mbit	-	9437184 bit	Industrial	PARALLEL	-	ZBT SRAM	-	SRAM	15 mm	13 mm
GS882Z36CGD-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT20BGD-450 Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662DT20BGD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	820 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662DT20BGD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT37BD-400 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662TT37BD	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	800 mA	-	Pipelined	2 M x 36	-	-	-	20 Bit	SRAM	72 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8662TT37BD-400 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D07BD-400I Anlielectronics Тип	GSI Technology	DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	400 MHz	400 MHz	-	+ 85 C	DDR	-	- 40 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8662D07BD	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	745 mA	-	Pipelined	8 M x 8	-	-	-	-	SRAM	72 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8662D07BD-400I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88037CGT-250V Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 2.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	2.5 ns	-	250 MHz	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS88037CGT-250V	250 MHz	250 MHz	2, 2.7 V	+ 70 C	-	1.7, 2.3 V	0 C	-	3	Surface Mount	SMD/SMT	36 Bit	256 kWords	256000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.37	-	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 70 °C	-	GS88037CGT	e3	Yes	3A991.B.2.B	-	PURE MATTE TIN	PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY	8542.32.00.41	SRAMs	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2 V	1.8/2.5 V	COMMERCIAL	1.7 V	9 Mbit	1	SYNCHRONOUS	195 mA	-	Pipelined	256 k x 36	3-STATE	1.6 mm	36	18 Bit	-	9 Mbit	0.025 A	9437184 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	1.7 V	-	20 mm	14 mm
GS88037CGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT11BD-550I Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 8M x 9 72M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	15	-	Parallel	-	-	550 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8662DT11BD	-	-	-	SigmaQuad-II+	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	-	-	-	8 M x 9	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662DT11BD-550I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT06BGD-550 Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 8M x 8 64M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	15	-	Parallel	-	-	550 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8662DT06BGD	-	-	-	SigmaQuad-II+	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	-	-	-	8 M x 8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662DT06BGD-550 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82582D20GE-500I Anlielectronics Тип	GSI Technology	SRAM 1.5/1.8V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	10	-	Parallel	-	-	500 MHz	-	-	+ 100 C	DDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS82582D20GE	-	-	-	SigmaQuad-II+	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	1.07 A	-	-	16 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82582D20GE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662D20BGD-450 Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 4M x 18 72M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	QDR	15	-	Parallel	-	-	450 MHz	450 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	4 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II+	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8662D20BGD	-	-	-	SigmaQuad-II+	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	2	-	820 mA	-	Pipelined	4 M x 18	-	-	-	20 Bit	-	72 Mbit	-	-	Commercial	-	-	-	-	-	-	-
GS8662D20BGD-450 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81282Z18GB-333V Anlielectronics Тип	GSI Technology	SRAM 1.8/2.5V 8M x 18 144M Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-119	YES	119	4.5 ns	-	-	-	10	GSI TECHNOLOGY	Parallel	-	GS81282Z18GB-333V	333 MHz	-	-	+ 85 C	SDR	-	0 C	Yes	-	-	SMD/SMT	-	8388608 words	8000000	85 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	-	NOT SPECIFIED	5.68	Details	Yes	-	3.6 V	2.3 V	1.8 V	-	NBT SRAM	-	-	0 to 85 °C	Tray	GS81282Z18GB	-	-	-	NBT Pipeline/Flow Through	-	IT ALSO OPERATES AT 2.5 V NOMINAL SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	-	R-PBGA-B119	-	2 V	-	OTHER	1.7 V	144 Mbit	-	SYNCHRONOUS	400 mA, 530 mA	4.5 ns	-	8 M x 18	-	1.99 mm	18	-	-	-	-	150994944 bit	-	PARALLEL	-	ZBT SRAM	-	-	22 mm	14 mm
GS81282Z18GB-333V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82582QT37GE-333 Anlielectronics Тип	GSI Technology	SRAM 1.5/1.8V 8M x 36 288M Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	BGA-165	YES	165	0.45 ns	-	-	-	10	GSI TECHNOLOGY	Parallel	-	GS82582QT37GE-333	333 MHz	-	1.9 V	+ 70 C	QDR-II	1.7 V	0 C	Yes	-	-	SMD/SMT	36 Bit	8 MWords	8000000	85 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	-	NOT SPECIFIED	5.59	Details	Yes	FPBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II+	1.8000 V	-	0 to 85 °C	Tray	GS82582QT37GE	-	-	3A991.B.2.B	SigmaQuad-II+ B2	-	-	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	1.9 V	-	OTHER	1.7 V	288 Mbit	-	SYNCHRONOUS	1.11 A	0.45	-	8 M x 36	-	1.5 mm	36	-	-	-	-	288	-	PARALLEL	-	STANDARD SRAM	-	-	17 mm	15 mm
GS82582QT37GE-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82583ED18GK-500I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.5V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-260	YES	260	-	-	-	DDR	10	GSI TECHNOLOGY	Parallel	-	GS82583ED18GK-500I	500 MHz	500 MHz	1.35 V	+ 100 C	QDR-III	1.25 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	16 MWords	16000000	-	-	PLASTIC/EPOXY	HBGA	HBGA,	-	RECTANGULAR	GRID ARRAY, HEAT SINK/SLUG	Active	-	NOT SPECIFIED	5.74	Details	Yes	FBGA	1.35 V	1.25 V	1.2 V	Synchronous	SigmaQuad-IIIe	1.3000 V	Industrial grade	-40 to 100 °C	Tray	GS82583ED18GK	e1	-	3A991.B.2.B	SigmaQuad-IIIe B4	Tin/Silver/Copper (Sn/Ag/Cu)	-	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	260	R-PBGA-B260	-	1.25 V	-	-	1.15 V	288 Mbit	1	SYNCHRONOUS	1.2 A	-	-	16 M x 18	-	2.3 mm	18	22 Bit	-	288 Mbit	-	301989888 bit	Industrial	PARALLEL	-	QDR SRAM	-	-	22 mm	14 mm
GS82583ED18GK-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81302TT19GE-350I Anlielectronics Тип	GSI Technology	SRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	DDR	10	-	Parallel	-	-	350 MHz	350 MHz	1.9 V	+ 85 C	DDR-II	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaDDR-II+	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS81302TT19GE	-	-	-	SigmaDDR-II+ B2	-	-	-	-	-	-	-	-	-	-	-	165	-	-	-	-	-	-	144 Mbit	1	-	810 mA	-	Pipelined	8 M x 18	-	-	-	22 Bit	-	144 Mbit	-	-	Industrial	-	-	-	-	-	-	-
GS81302TT19GE-350I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82582T19GE-333I Anlielectronics Тип	GSI Technology	SRAM 1.5/1.8V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	10	-	Parallel	-	-	333 MHz	-	-	+ 85 C	DDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II+	-	-	-	Tray	GS82582T19GE	-	-	-	SigmaDDR-II+ B2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	640 mA	-	-	16 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82582T19GE-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662DT06BGD-550I Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 8M x 8 64M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	15	-	Parallel	-	-	550 MHz	-	-	+ 85 C	DDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8662DT06BGD	-	-	-	SigmaQuad-II+	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	-	-	-	8 M x 8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662DT06BGD-550I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS81313LQ18GK-714I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.25V 8M x 18 144M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-260	-	-	-	-	-	DDR	10	-	Parallel	-	-	714 MHz	714 MHz	1.35 V	+ 100 C	DDR	1.2 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	BGA	1.35 V	1.2 V	-	Synchronous	SigmaQuad-IIIe	1.3000 V	Industrial grade	-40 to 100 °C	Tray	GS81313LQ18GK	-	-	-	SigmaQuad-IIIe B2	-	-	-	-	-	-	-	-	-	-	-	260	-	-	-	-	-	-	144 Mbit	1	-	1.7 A	-	-	8 M x 18	-	-	-	21 Bit	-	144 MB	-	-	Industrial	-	-	-	-	-	-	-
GS81313LQ18GK-714I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662S36BD-250 Anlielectronics Тип	GSI Technology	SRAM 1.8 or 1.5V 2M x 36 72M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	-	-	-	15	-	Parallel	-	-	250 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	1.9 V	1.7 V	-	-	SigmaSIO DDR-II	-	-	-	Tray	GS8662S36BD	-	-	-	SigmaSIO DDR-II	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	730 mA	-	-	2 M x 36	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS8662S36BD-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS82583ET18GK-550I Anlielectronics Тип	GSI Technology	SRAM 1.2/1.5V 16M x 18 288M Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-260	-	-	-	-	-	-	10	-	Parallel	-	-	550 MHz	-	-	+ 100 C	DDR-III	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.35 V	1.25 V	-	-	SigmaDDR-IIIe	-	-	-	Tray	GS82583ET18GK	-	-	-	SigmaDDR-IIIe B2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	288 Mbit	-	-	870 mA	-	-	16 M x 18	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GS82583ET18GK-550I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662QT07BD-357 Anlielectronics Тип	GSI Technology	QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.45 ns	-	-	-	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8662QT07BD-357	357 MHz	-	-	+ 70 C	-	-	0 C	-	-	-	SMD/SMT	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.22	-	No	-	1.9 V	1.7 V	1.8 V	-	-	-	-	-	-	GS8662QT07BD	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	PIPELINED ARCHITECTURE	8542.32.00.41	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	-	1.9 V	-	COMMERCIAL	1.7 V	72 Mbit	-	SYNCHRONOUS	985 mA	-	-	8MX8	-	1.4 mm	8	-	-	-	-	67108864 bit	-	PARALLEL	-	QDR SRAM	-	-	15 mm	13 mm
GS8662QT07BD-357 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8662TT06BD-450M Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	450 MHz	450 MHz	-	+ 125 C	DDR	-	- 55 C	Yes	-	Surface Mount	SMD/SMT	8 Bit	8 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaCIO DDR-II	1.8000 V	Military grade	-55 to 125 °C	Tray	GS8662TT06BD	-	-	-	SigmaQuad-II+	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	72 Mbit	1	-	-	-	Pipelined	8 M x 8	-	-	-	22 Bit	SRAM	72 Mbit	-	-	Military	-	-	-	-	SRAM	-	-
GS8662TT06BD-450M GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS882Z36CGD-200IV,GS8662DT20BGD-450,GS8662TT37BD-400,GS8662D07BD-400I,GS88037CGT-250V.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)