Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page8

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Package / Case	Surface Mount	Number of Terminals	Access Time-Max	Brand	Clock Frequency-Max (fCLK)	Data Rate Architecture	Factory Pack QuantityFactory Pack Quantity	Ihs Manufacturer	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Clock Rate	Maximum Operating Supply Voltage	Maximum Operating Temperature	Memory Types	Minimum Operating Supply Voltage	Minimum Operating Temperature	Moisture Sensitive	Moisture Sensitivity Levels	Mounting	Mounting Styles	Number of I/O Lines	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Supply Voltage-Nom (Vsup)	Timing Type	Tradename	Typical Operating Supply Voltage	Usage Level	Operating Temperature	Packaging	Series	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Subcategory	Technology	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Memory Size	Number of Ports	Operating Mode	Supply Current-Max	Access Time	Architecture	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Product Type	Density	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Product Category	Length	Width
	Mfr. Тип GS8672D18BGE-200 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	200 MHz	-	-	+ 70 C	QDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II	-	-	-	Tray	GS8672D18BGE	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	850 mA	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672D18BGE-200 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z18DGT-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	5.5 ns	-	-	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161Z18DGT-250V	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	-	1.7, 2.3 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP,	-	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.26	-	Yes	TQFP	2.7 V	1.7 V	1.8 V	Synchronous	-	1.8, 2.5 V	Commercial grade	0 to 85 °C	-	-	-	-	3A991.B.2.B	-	-	ALSO OPERATES AT 2.5V	8542.32.00.41	-	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	0.65 mm	compliant	100	R-PQFP-G100	-	2 V	-	COMMERCIAL	1.7 V	18 Mbit	2	SYNCHRONOUS	205 mA, 225 mA	5.5 ns	Flow-Through/Pipelined	1 M x 18	-	1.6 mm	18	20 Bit	-	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	ZBT SRAM	-	-	20 mm	14 mm
GS8161Z18DGT-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AB-333 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	4.5 ns	-	333 MHz	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS832218AB-333	333 MHz	222@Flow-Through/333@Pipelined MHz	2.7, 3.6 V	+ 70 C	-	2.3, 3 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 85 °C	-	GS832218AB	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	0.3 mA	4.5 ns	Flow-Through/Pipelined	2MX18	3-STATE	1.99 mm	18	21 Bit	-	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	-	22 mm	14 mm
GS832218AB-333 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88236CB-200I Anlielectronics Тип	GSI Technology	Cache SRAM, 256KX36, 6.5ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	119	6.5 ns	GSI Technology	-	-	42	GSI TECHNOLOGY	Parallel	GSI Technology	GS88236CB-200I	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.13	-	No	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS88236CB	e0	No	3A991.B.2.B	Pipeline/Flow Through	Tin/Lead (Sn/Pb)	PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	INDUSTRIAL	2.3 V	9 Mbit	-	SYNCHRONOUS	160 mA, 190 mA	6.5 ns	-	256 k x 36	-	1.77 mm	36	-	SRAM	-	-	9437184 bit	-	PARALLEL	-	CACHE SRAM	-	SRAM	22 mm	14 mm
GS88236CB-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161Z36DD-250V Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 5.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2, 2.7 V	+ 70 C	SDR	1.7, 2.3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	2.7 V	1.7 V	-	Synchronous	NBT SRAM	1.8, 2.5 V	Commercial grade	0 to 85 °C	Tray	GS8161Z36DD	-	-	-	NBT	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	225 mA, 245 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8161Z36DD-250V GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8322Z36AGB-250 Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-119	-	-	-	GSI Technology	-	SDR	14	-	Parallel	GSI Technology	-	250 MHz	181.8@Flow-Through/250@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8322Z36AGB	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	119	-	-	-	-	-	-	36 Mbit	4	-	230 mA, 285 mA	5.5 ns	Flow-Through/Pipelined	1 M x 36	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8322Z36AGB-250 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z36DD-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	SDR	36	-	Parallel	GSI Technology	-	200 MHz	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	512 kWords	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	FBGA	3.6 V	2.3 V	-	Synchronous	NBT SRAM	2.5, 3.3 V	Industrial grade	-40 to 100 °C	Tray	GS8162Z36DD	-	-	-	NBT Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	18 Mbit	4	-	230 mA	6.5 ns	Flow-Through/Pipelined	512 k x 36	-	-	-	19 Bit	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8162Z36DD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672D20BGE-500I Anlielectronics Тип	GSI Technology	QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	500 MHz	-	-	+ 85 C	QDR-II	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaQuad-II+	-	-	-	Tray	GS8672D20BGE	-	-	-	SigmaQuad-II+ B4	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.63 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672D20BGE-500I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8321Z36AD-200I Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX36, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	6 Weeks	-	YES	165	-	-	-	-	-	GSI TECHNOLOGY	-	GSI Technology	GS8321Z36AD-200I	-	153.8@Flow-Through/200@Pipelined MHz	2.7, 3.6 V	-	-	2.3, 3 V	-	-	-	-	-	36 Bit	1048576 words	1000000	-	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	4.78	-	No	FBGA	-	-	2.5 V	-	-	2.5, 3.3 V	Industrial grade	-40 to 100 °C	-	-	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE	-	-	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	2.7 V	-	-	2.3 V	-	-	SYNCHRONOUS	-	6.5@Flow-Through/3@P	-	1MX36	-	1.4 mm	36	-	-	-	-	36	Industrial	PARALLEL	-	ZBT SRAM	-	-	15 mm	13 mm
GS8321Z36AD-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q18BD-333I Anlielectronics Тип	GSI Technology	QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	QDR	15	-	Parallel	GSI Technology	-	333 MHz	333 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q18BD	-	-	-	SigmaQuad-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	895 mA	-	Pipelined	2 M x 18	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8342Q18BD-333I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8672T20BGE-633 Anlielectronics Тип	GSI Technology	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	15	-	Parallel	GSI Technology	-	633 MHz	-	-	+ 70 C	DDR-II	-	0 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	-	1.9 V	1.7 V	-	-	SigmaDDR-II+	-	-	-	Tray	GS8672T20BGE	-	-	-	SigmaDDR-II+ B2	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	72 Mbit	-	-	1.5 A	-	-	4 M x 18	-	-	-	-	SRAM	-	-	72	-	-	-	-	-	SRAM	-	-
GS8672T20BGE-633 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8162Z18DB-375 Anlielectronics Тип	GSI Technology	ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-119	YES	119	4.2 ns	GSI Technology	-	SDR	21	GSI TECHNOLOGY	Parallel	GSI Technology	GS8162Z18DB-375	375 MHz	238@Flow-Through/375@Pipelined MHz	2.7, 3.6 V	+ 70 C	SDR	2.3, 3 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	1000000	85 °C	-	PLASTIC/EPOXY	BGA	BGA,	-	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.27	N	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	NBT SRAM	2.5, 3.3 V	Commercial grade	0 to 85 °C	Tray	GS8162Z18DB	-	-	3A991.B.2.B	NBT Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	-	OTHER	2.3 V	18 Mbit	2	SYNCHRONOUS	250 mA, 320 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18	-	1.99 mm	18	20 Bit	SRAM	18 Mbit	-	18874368 bit	Commercial	PARALLEL	-	ZBT SRAM	-	SRAM	22 mm	14 mm
GS8162Z18DB-375 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342S18BGD-350 Anlielectronics Тип	GSI Technology	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	DDR	15	-	Parallel	GSI Technology	-	350 MHz	350 MHz	1.9 V	+ 70 C	DDR	1.7 V	0 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	FBGA	1.9 V	1.7 V	-	Synchronous	SigmaSIO-II	1.8000 V	Commercial grade	0 to 85 °C	Tray	GS8342S18BGD	-	-	-	SigmaSIO DDR-II	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	165	-	-	-	-	-	-	36 Mbit	2	-	665 mA	-	Pipelined	2 M x 18	-	-	-	20 Bit	SRAM	36 Mbit	-	-	Commercial	-	-	-	-	SRAM	-	-
GS8342S18BGD-350 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8161E36DGT-200I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX36, 4.2ns, CMOS, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	TQFP-100	YES	100	4.2 ns	GSI Technology	-	-	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS8161E36DGT-200I	200 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	524288 words	512000	85 °C	-40 °C	UNSPECIFIED	QFP	QFP,	-	RECTANGULAR	FLATPACK	Active	QFP	NOT SPECIFIED	5.64	Details	Yes	-	3.6 V	2.3 V	2.5 V	-	SyncBurst	-	-	-	Tray	GS8161E36DGT	-	-	3A991.B.2.B	DCD Pipeline/Flow Through	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	NOT SPECIFIED	1	-	compliant	100	R-XQFP-G100	Not Qualified	2.7 V	-	INDUSTRIAL	2.3 V	18 Mbit	-	SYNCHRONOUS	230 mA	6.5 ns	-	512 k x 36	-	-	36	-	SRAM	-	-	18874368 bit	-	PARALLEL	-	CACHE SRAM	-	SRAM	-	-
GS8161E36DGT-200I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8342Q36BGD-300I Anlielectronics Тип	GSI Technology	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	10 Weeks	BGA-165	YES	165	0.45 ns	GSI Technology	300 MHz	QDR	15	GSI TECHNOLOGY	Parallel	GSI Technology	GS8342Q36BGD-300I	300 MHz	300 MHz	1.9 V	+ 85 C	DDR	1.7 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	36 Bit	1 MWords	1000000	85 °C	-40 °C	PLASTIC/EPOXY	LBGA	LBGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.37	Details	Yes	FBGA	1.9 V	1.7 V	1.8 V	Synchronous	SigmaQuad-II	1.8000 V	Industrial grade	-40 to 100 °C	Tray	GS8342Q36BGD	-	-	3A991.B.2.B	SigmaQuad-II	-	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	1.5/1.8,1.8 V	INDUSTRIAL	1.7 V	36 Mbit	2	SYNCHRONOUS	980 mA	-	Pipelined	1 M x 36	3-STATE	1.4 mm	36	19 Bit	SRAM	36 Mbit	0.235 A	37748736 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM	1.7 V	SRAM	15 mm	13 mm
GS8342Q36BGD-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS816218DD-250I Anlielectronics Тип	GSI Technology	Cache SRAM, 1MX18, 5.5ns, CMOS, PBGA165, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	-	BGA-165	-	-	-	GSI Technology	-	-	36	-	Parallel	GSI Technology	-	250 MHz	-	-	+ 85 C	SDR	-	- 40 C	Yes	-	-	SMD/SMT	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.6 V	2.3 V	-	-	SyncBurst	-	-	-	Tray	GS816218DD	-	-	-	Pipeline/Flow Through	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	18 Mbit	-	-	230 mA, 250 mA	5.5 ns	-	1 M x 18	-	-	-	-	SRAM	-	-	-	-	-	-	-	-	SRAM	-	-
GS816218DD-250I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS832218AB-150 Anlielectronics Тип	GSI Technology	Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-119	YES	119	7.5 ns	-	150 MHz	SDR	-	GSI TECHNOLOGY	Parallel	GSI Technology	GS832218AB-150	150 MHz	133@Flow-Through/150@Pipelined MHz	2.7, 3.6 V	+ 70 C	-	2.3, 3 V	0 C	-	-	Surface Mount	SMD/SMT	18 Bit	2 MWords	2000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Active	BGA	NOT SPECIFIED	5.11	-	No	FBGA	3.6 V	2.3 V	2.5 V	Synchronous	-	2.5, 3.3 V	Commercial grade	0 to 85 °C	-	-	e0	No	3A991.B.2.B	-	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	SRAMs	CMOS	BOTTOM	BALL	NOT SPECIFIED	1	1.27 mm	compliant	119	R-PBGA-B119	Not Qualified	2.7 V	2.5/3.3 V	COMMERCIAL	2.3 V	36 Mbit	2	SYNCHRONOUS	175 mA, 190 mA	7.5 ns	Flow-Through/Pipelined	2 M x 18	3-STATE	1.99 mm	18	21 Bit	-	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	CACHE SRAM	2.3 V	-	22 mm	14 mm
GS832218AB-150 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8160E18DGT-200IV Anlielectronics Тип	GSI Technology	- Сборник данных Сравнение	Min.:1 Mult.:1	-	TQFP-100	-	-	-	GSI Technology	-	SDR	18	-	Parallel	GSI Technology	-	200 MHz	200 MHz	2, 2.7 V	+ 100 C	SDR	1.7, 2.3 V	- 40 C	Yes	-	Surface Mount	SMD/SMT	18 Bit	1 MWords	-	-	-	-	-	-	-	-	-	-	-	-	-	Details	-	TQFP	2.7 V	1.7 V	-	Synchronous	SyncBurst	1.8, 2.5 V	Industrial grade	-40 to 85 °C	Tray	GS8160E18DGT	-	-	-	DCD Synchronous Burst	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	100	-	-	-	-	-	-	18 Mbit	2	-	210 mA, 215 mA	6.5 ns	-	1 M x 18	-	-	-	-	SRAM	18 Mbit	-	-	Industrial	-	-	-	-	SRAM	-	-
GS8160E18DGT-200IV GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS8182Q18BGD-133 Anlielectronics Тип	GSI Technology	DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	BGA-165	YES	165	0.5 ns	GSI Technology	-	-	18	GSI TECHNOLOGY	Parallel	GSI Technology	GS8182Q18BGD-133	133 MHz	-	-	+ 70 C	DDR	-	0 C	Yes	3	-	SMD/SMT	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	LBGA,	-	RECTANGULAR	GRID ARRAY, LOW PROFILE	Active	BGA	NOT SPECIFIED	5.19	Details	Yes	-	1.9 V	1.7 V	1.8 V	-	SigmaQuad-II	-	-	-	Tray	GS8182Q18BGD	e1	Yes	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	PIPELINED ARCHITECTURE	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	165	R-PBGA-B165	Not Qualified	1.9 V	-	COMMERCIAL	1.7 V	18 Mbit	-	SYNCHRONOUS	375 mA	-	-	1 M x 18	-	1.4 mm	18	-	SRAM	-	-	18874368 bit	-	PARALLEL	-	DDR SRAM	-	SRAM	15 mm	13 mm
GS8182Q18BGD-133 GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип GS88018CGT-300I Anlielectronics Тип	GSI Technology	Cache SRAM, 512KX18, 5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	TQFP-100	YES	100	5 ns	GSI Technology	300 MHz	SDR	36	GSI TECHNOLOGY	Parallel	GSI Technology	GS88018CGT-300I	300 MHz	200@Flow-Through/300@Pipelined MHz	2.7, 3.6 V	+ 85 C	SDR	2.3, 3 V	- 40 C	Yes	3	Surface Mount	SMD/SMT	18 Bit	512 kWords	512000	85 °C	-40 °C	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Active	QFP	NOT SPECIFIED	5.3	Details	Yes	TQFP	3.6 V	2.3 V	2.5 V	Synchronous	SyncBurst	2.5, 3.3 V	Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	Yes	3A991.B.2.B	Pipeline/Flow Through	PURE MATTE TIN	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	GULL WING	260	1	0.65 mm	compliant	100	R-PQFP-G100	Not Qualified	2.7 V	2.5/3.3 V	INDUSTRIAL	2.3 V	9 Mbit	2	SYNCHRONOUS	170 mA, 225 mA	5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	19 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	CACHE SRAM	2.3 V	SRAM	20 mm	14 mm
GS88018CGT-300I GSI Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8672D18BGE-200,GS8161Z18DGT-250V,GS832218AB-333,GS88236CB-200I,GS8161Z36DD-250V.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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