| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Alternate Memory Width | Output Enable |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипHM3E-65664A-9Anlielectronics Тип | Temic Semiconductors |
Standard SRAM, 8KX8, 55ns, CMOS, PDIP28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 55 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | - | DIP28,.6 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | - | Tin/Lead (Sn/Pb) | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-PDIP-T28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.075 mA | 8KX8 | 3-STATE | 8 | 0.000003 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | YES | ||
| HM3E-65664A-9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипWS512K32N-25H1QAnlielectronics Тип | White Microelectronics |
Description: SRAM Module, 512KX32, 25ns, CMOS, CHIP66, CERAMIC, HIP-66
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 66 | 25 ns | WHITE MICROELECTRONICS | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, HIP-66 | - | SQUARE | IN-LINE | Transferred | No | 5 V | - | 3A001.A.2.C | - | USER CONFIGURABLE AS 2M X 8 | 8542.32.00.41 | HEX | PIN/PEG | NOT SPECIFIED | 1 | - | unknown | NOT SPECIFIED | S-CHIP-P66 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 512KX32 | - | 32 | - | 16777216 bit | MIL-STD-883 | PARALLEL | - | SRAM MODULE | - | 16 | - | ||
| WS512K32N-25H1Q | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88512CA25NIAnlielectronics Тип | White Microelectronics |
Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, SOJ-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | 25 ns | WHITE MICROELECTRONICS | 524288 words | 512000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | SOJ | CERAMIC, SOJ-32 | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | 5 V | - | - | - | - | - | DUAL | J BEND | - | 1 | - | unknown | - | R-CDSO-J32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | - | 512KX8 | - | 8 | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88512CA25NI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88128LPS55CBAnlielectronics Тип | White Microelectronics |
Description: Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 32 | 55 ns | WHITE MICROELECTRONICS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | - | RECTANGULAR | IN-LINE | Transferred | - | 5 V | - | - | - | - | - | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | R-CDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 128KX8 | - | 8 | - | 1048576 bit | MIL-STD-883 | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88128LPS55CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипCMRD-67130L-55Anlielectronics Тип | Temic Semiconductors |
Dual-Port SRAM, 1KX8, 55ns, CMOS, CQFP64,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 55 ns | TEMIC SEMICONDUCTORS | 1024 words | 1000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | QFP | - | QFP64,.47SQ,20 | SQUARE | FLATPACK | Transferred | No | 5 V | e0 | - | Tin/Lead (Sn/Pb) | - | - | QUAD | FLAT | - | 1 | 0.5 mm | unknown | - | S-CQFP-F64 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.14 mA | 1KX8 | 3-STATE | 8 | 0.000005 A | 8192 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | - | YES | ||
| CMRD-67130L-55 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHMTP-65664A-9Anlielectronics Тип | Temic Semiconductors |
Standard SRAM, 8KX8, 55ns, CMOS, PDSO28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 55 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | - | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Transferred | No | 5 V | e0 | - | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | R-PDSO-G28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.075 mA | 8KX8 | 3-STATE | 8 | 0.000003 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | YES | ||
| HMTP-65664A-9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип5962-3829411MZAAnlielectronics Тип | Temic Semiconductors |
Description: Standard SRAM, 8KX8, 45ns, CMOS, CDIP28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 45 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | - | Tin/Lead (Sn/Pb) - hot dipped | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-GDIP-T28 | Not Qualified | - | MILITARY | - | 1 | ASYNCHRONOUS | 0.125 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | MIL-STD-883 | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | YES | ||
| 5962-3829411MZA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHMT-65664B-5Anlielectronics Тип | Temic Semiconductors |
Standard SRAM, 8KX8, 45ns, CMOS, PDSO28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 45 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | SOP | - | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | GULL WING | - | - | 1.27 mm | unknown | - | R-PDSO-G28 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 8 | 0.000001 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | ||
| HMT-65664B-5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHM3-65767N-5Anlielectronics Тип | Temic Semiconductors |
Description: Standard SRAM, 16KX1, 40ns, CMOS, PDIP20,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 20 | 40 ns | TEMIC SEMICONDUCTORS | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | DIP | - | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | R-PDIP-T20 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.09 mA | 16KX1 | 3-STATE | 1 | 0.03 A | 16384 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | - | - | ||
| HM3-65767N-5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88128C70CBAnlielectronics Тип | White Microelectronics |
Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 32 | 70 ns | WHITE MICROELECTRONICS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | - | RECTANGULAR | IN-LINE | Transferred | - | 5 V | - | - | - | - | - | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | R-CDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 128KX8 | - | 8 | - | 1048576 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88128C70CB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI816256CA20M44IAnlielectronics Тип | White Microelectronics |
Standard SRAM, 256KX16, 20ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | 20 ns | WHITE MICROELECTRONICS | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | - | 0.400 INCH, PLASTIC, SOJ-44 | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | 5 V | - | 3A991.B.2.A | - | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | - | unknown | - | R-PDSO-J44 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | - | 256KX16 | - | 16 | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI816256CA20M44I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88128LPS35FBAnlielectronics Тип | White Microelectronics |
Standard SRAM, 128KX8, 35ns, CMOS, CDFP32, CERAMIC, FP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | 35 ns | WHITE MICROELECTRONICS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DFP | CERAMIC, FP-32 | - | RECTANGULAR | FLATPACK | Obsolete | - | 5 V | - | - | - | - | - | DUAL | FLAT | - | 1 | - | unknown | - | R-CDFP-F32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 128KX8 | - | 8 | - | 1048576 bit | MIL-STD-883 | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88128LPS35FB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипWMS128K8-55CCAnlielectronics Тип | White Microelectronics |
Description: Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 32 | 55 ns | WHITE MICROELECTRONICS | 131072 words | 128000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | 0.600 INCH, CERAMIC, DIP-32 | - | RECTANGULAR | IN-LINE | Transferred | - | 5 V | - | - | - | - | - | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | R-CDIP-T32 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | - | 128KX8 | - | 8 | - | 1048576 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| WMS128K8-55CC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHM3-65764N-5Anlielectronics Тип | Temic Semiconductors |
Description: Standard SRAM, 8KX8, 55ns, CMOS, PDIP28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 55 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | - | TIN LEAD | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 8KX8 | 3-STATE | 8 | 0.02 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | - | YES | ||
| HM3-65764N-5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88512CA20N36BAnlielectronics Тип | White Microelectronics |
Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, SOJ-36
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 36 | 20 ns | WHITE MICROELECTRONICS | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | SOJ | CERAMIC, SOJ-36 | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | 5 V | - | 3A001.A.2.C | - | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | - | unknown | - | R-CDSO-J36 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 512KX8 | - | 8 | - | 4194304 bit | MIL-STD-883 | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88512CA20N36B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88512CA25B32IAnlielectronics Тип | White Microelectronics |
Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, THIN, CERAMIC, FP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 32 | 25 ns | WHITE MICROELECTRONICS | 524288 words | 512000 | 85 °C | -40 °C | CERAMIC, METAL-SEALED COFIRED | - | THIN, CERAMIC, FP-32 | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | 5 V | - | - | - | - | - | DUAL | GULL WING | - | 1 | - | unknown | - | R-CDSO-G32 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | ASYNCHRONOUS | - | 512KX8 | - | 8 | - | 4194304 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88512CA25B32I | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Тип2114-UCEAnlielectronics Тип | GTE Microcircuits |
Standard SRAM, 1KX4, 450ns, MOS, CDIP18,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 18 | 450 ns | GTE MICROCIRCUITS | 1024 words | 1000 | 70 °C | - | CERAMIC | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Transferred | No | 5 V | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | R-XDIP-T18 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | - | 1KX4 | 3-STATE | 4 | - | 4096 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | ||
| 2114-UCE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHM3-65162C-5Anlielectronics Тип | Temic Semiconductors |
Standard SRAM, 2KX8, 70ns, CMOS, PDIP24,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 24 | 70 ns | TEMIC SEMICONDUCTORS | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | DIP | - | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | No | 5 V | e0 | - | TIN LEAD | - | - | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | R-PDIP-T24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.07 mA | 2KX8 | 3-STATE | 8 | 0.00003 A | 16384 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | YES | ||
| HM3-65162C-5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипHMU-65664A-9Anlielectronics Тип | Temic Semiconductors |
Standard SRAM, 8KX8, 55ns, CMOS, PDSO28,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 55 ns | TEMIC SEMICONDUCTORS | 8192 words | 8000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | - | SOJ28,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | 5 V | e0 | - | Tin/Lead (Sn/Pb) | - | - | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | R-PDSO-G28 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.075 mA | 8KX8 | 3-STATE | 8 | 0.000003 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | YES | ||
| HMU-65664A-9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипEDI88128LP70CBAnlielectronics Тип | White Microelectronics |
Description: Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 32 | 70 ns | WHITE MICROELECTRONICS | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | - | RECTANGULAR | IN-LINE | Transferred | - | 5 V | - | - | - | - | - | DUAL | THROUGH-HOLE | - | 1 | - | unknown | - | R-CDIP-T32 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | - | 128KX8 | - | 8 | - | 1048576 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | ||
| EDI88128LP70CB |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ
