| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип6116L150DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 2KX8, 150ns, CMOS, CDIP16, 0.300 INCH, CERAMIC, DIP-16
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 16 | 150 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, CERAMIC, DIP-16 | DIP24,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 16 | R-CDIP-T16 | Not Qualified | 5.5 V | MILITARY | 4.5 V | - | ASYNCHRONOUS | 0.08 mA | 2KX8 | 3-STATE | 5.08 mm | 8 | 0.0003 A | 16384 bit | MIL-STD-883 Class B | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | 20.066 mm | 7.62 mm | ||
| 6116L150DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71322L45L52BAnlielectronics Тип | Integrated Device Technology Inc |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IDT71322L45L52B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7006S20PFIAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 16KX8, 20ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 20 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP64,.66SQ,32 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Transferred | QFP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.37 mA | 16KX8 | 3-STATE | 1.6 mm | 8 | 0.03 A | 131072 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | - | 14 mm | 14 mm | ||
| IDT7006S20PFI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT70V9269S9PRFIAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 16KX16, 20ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 128 | 20 ns | 66 MHz | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 16384 words | 16000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFQFP | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 | QFP128,.63X.87,20 | RECTANGULAR | FLATPACK, LOW PROFILE, FINE PITCH | Obsolete | QFP | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | 225 | 1 | 0.5 mm | not_compliant | 30 | 128 | R-PQFP-G128 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 2 | SYNCHRONOUS | 0.27 mA | 16KX16 | 3-STATE | 1.6 mm | 16 | 0.005 A | 262144 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 3 V | - | 20 mm | 14 mm | ||
| IDT70V9269S9PRFI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71V256SB12YAnlielectronics Тип | Integrated Device Technology Inc |
Cache Tag SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 12 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | Tin/Lead (Sn85Pb15) | - | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 30 | 28 | R-PDSO-J28 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.09 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.002 A | 262144 bit | - | PARALLEL | COMMON | CACHE TAG SRAM | 3 V | YES | 17.9324 mm | 7.5184 mm | ||
| IDT71V256SB12Y | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7142LA70PAnlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX8, 70ns, CMOS, PDIP48, 0.600 INCH, PLASTIC, DIP-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 48 | 70 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 2048 words | 2000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.600 INCH, PLASTIC, DIP-48 | DIP48,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn85Pb15) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 48 | R-PDIP-T48 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.135 mA | 2KX8 | 3-STATE | 5.08 mm | 8 | 0.0015 A | 16384 bit | MIL-STD-883 Class B (Modified) | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | YES | 61.849 mm | 15.24 mm | ||
| IDT7142LA70P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7132LA70L48BAnlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX8, 70ns, CMOS, CQCC48, LCC-48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC-48 | LCC48,.56SQ,40 | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | 1.016 mm | not_compliant | - | 48 | S-CQCC-N48 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.18 mA | 2KX8 | 3-STATE | 3.048 mm | 8 | 0.004 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | YES | 14.3002 mm | 14.3002 mm | ||
| IDT7132LA70L48B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT10484S7CAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 4KX4, 7ns, CDIP28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 7 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 4096 words | 4000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | - | DIP28,.4 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | - | R-CDIP-T28 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.19 mA | 4KX4 | OPEN-EMITTER | - | 4 | - | 16384 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | - | - | - | - | ||
| IDT10484S7C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7188L45CAnlielectronics Тип | Integrated Device Technology Inc |
Description: Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 16384 words | 16000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 22 | R-CDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.1 mA | 16KX4 | 3-STATE | 5.08 mm | 4 | 0.00015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 2 V | NO | 27.432 mm | 7.62 mm | ||
| IDT7188L45C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT6167SA25YAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX1, 25ns, CMOS, PDSO20, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 20 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 16384 words | 16000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-20 | SOJ20,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | not_compliant | - | 20 | R-PDSO-J20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.1 mA | 16KX1 | 3-STATE | 3.556 mm | 1 | 0.005 A | 16384 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 12.8524 mm | 7.5184 mm | ||
| IDT6167SA25Y | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7133L70GBAnlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX16, 70ns, CMOS, CPGA68, CAVITY-UP, CERAMIC, PGA-68
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 68 | 70 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 2048 words | 2000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | CAVITY-UP, CERAMIC, PGA-68 | PGA68,11X11 | SQUARE | GRID ARRAY | Obsolete | PGA | No | 5 V | e0 | Yes | 3A001.A.2.C | TIN LEAD | AUTOMATIC POWER-DOWN | 8542.32.00.41 | PERPENDICULAR | PIN/PEG | - | 1 | 2.54 mm | not_compliant | - | 68 | S-CPGA-P68 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 2 | ASYNCHRONOUS | 0.24 mA | 2KX16 | 3-STATE | 5.207 mm | 16 | 0.004 A | 32768 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | YES | 29.464 mm | 29.464 mm | ||
| IDT7133L70GB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT6167SA100DBAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 16KX1, 100ns, CMOS, CDIP20, 0.300 INCH, CERDIP-20
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 20 | 100 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.300 INCH, CERDIP-20 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 20 | R-GDIP-T20 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | - | 16KX1 | 3-STATE | 5.08 mm | 1 | - | 16384 bit | MIL-STD-883 Class B | PARALLEL | SEPARATE | STANDARD SRAM | - | NO | 25.3365 mm | 7.62 mm | ||
| IDT6167SA100DB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT7187S45CAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 64KX1, 45ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, HERMETIC SEALED, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 65536 words | 64000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | DIP, DIP22,.3 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 22 | R-CDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.11 mA | 64KX1 | 3-STATE | 5.08 mm | 1 | 0.015 A | 65536 bit | - | PARALLEL | SEPARATE | STANDARD SRAM | 4.5 V | NO | 27.432 mm | 7.62 mm | ||
| IDT7187S45C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71321SA45L52Anlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX8, 45ns, CMOS, CQCC52, LCC-52
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 52 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 2048 words | 2000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | QCCN | QCCN, LCC52,.75SQ | LCC52,.75SQ | SQUARE | CHIP CARRIER | Obsolete | LCC | No | 5 V | e0 | No | EAR99 | TIN LEAD | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 8542.32.00.41 | QUAD | NO LEAD | - | 1 | 1.27 mm | not_compliant | - | 52 | S-CQCC-N52 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.19 mA | 2KX8 | 3-STATE | 2.2098 mm | 8 | 0.015 A | 16384 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 4.5 V | YES | 19.05 mm | 19.05 mm | ||
| IDT71321SA45L52 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71V321L35PFIAnlielectronics Тип | Integrated Device Technology Inc |
Multi-Port SRAM, 2KX8, 35ns, CMOS, PQFP64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 35 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | QFP | - | QFP64,.66SQ,32 | SQUARE | FLATPACK | Obsolete | - | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | QUAD | GULL WING | 240 | - | 0.8 mm | not_compliant | 30 | - | S-PQFP-G64 | Not Qualified | - | INDUSTRIAL | - | 2 | ASYNCHRONOUS | 0.095 mA | 2KX8 | 3-STATE | - | 8 | 0.004 A | 16384 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | - | - | - | ||
| IDT71V321L35PFI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71C65S45TCAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, THIN, SIDE BRAZED, DIP-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 45 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 8192 words | 8000 | 70 °C | - | CERAMIC, METAL-SEALED COFIRED | DIP | 0.300 INCH, THIN, SIDE BRAZED, DIP-28 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 28 | R-CDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.16 mA | 8KX8 | 3-STATE | 5.08 mm | 8 | 0.015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 35.56 mm | 7.62 mm | ||
| IDT71C65S45TC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71256SL25YAnlielectronics Тип | Integrated Device Technology Inc |
Cache SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 28 | 25 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 32768 words | 32000 | 70 °C | - | PLASTIC/EPOXY | SOJ | 0.300 INCH, SOJ-28 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | 225 | 1 | 1.27 mm | not_compliant | 30 | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.12 mA | 32KX8 | 3-STATE | 3.556 mm | 8 | 0.00012 A | 262144 bit | - | PARALLEL | COMMON | CACHE SRAM | 2 V | YES | 17.9324 mm | 7.5184 mm | ||
| IDT71256SL25Y | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT61970S20PAnlielectronics Тип | Integrated Device Technology Inc |
Standard SRAM, 4KX4, 20ns, CMOS, PDIP22, 0.300 INCH, PLASTIC, DIP-22
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 22 | 20 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | DIP | 0.300 INCH, PLASTIC, DIP-22 | DIP22,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 22 | R-PDIP-T22 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.12 mA | 4KX4 | 3-STATE | 4.191 mm | 4 | 0.02 A | 16384 bit | - | PARALLEL | COMMON | STANDARD SRAM | 4.5 V | YES | 26.797 mm | 7.62 mm | ||
| IDT61970S20P | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT7130LA55PFIAnlielectronics Тип | Integrated Device Technology Inc |
Dual-Port SRAM, 1KX8, 55ns, CMOS, PQFP64, TQFP-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 55 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | 3 | 1024 words | 1000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-64 | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | QUAD | GULL WING | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 2 | ASYNCHRONOUS | 0.14 mA | 1KX8 | 3-STATE | 1.6 mm | 8 | 0.004 A | 8192 bit | - | PARALLEL | COMMON | MULTI-PORT SRAM | 2 V | - | 14 mm | 14 mm | ||
| IDT7130LA55PFI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIDT71256L30DBAnlielectronics Тип | Integrated Device Technology Inc |
Description: Standard SRAM, 32KX8, 30ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 28 | 30 ns | - | INTEGRATED DEVICE TECHNOLOGY INC | - | 32768 words | 32000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | 0.600 INCH, CERDIP-28 | DIP28,.6 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | - | 3A001.A.2.C | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | not_compliant | - | 28 | R-GDIP-T28 | Not Qualified | 5.5 V | MILITARY | 4.5 V | 1 | ASYNCHRONOUS | 0.125 mA | 32KX8 | 3-STATE | 5.08 mm | 8 | 0.0005 A | 262144 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | STANDARD SRAM | 2 V | YES | 37.211 mm | 15.24 mm | ||
| IDT71256L30DB |
Индекс :
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