| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Operating Mode | Max Supply Current | Supply Current-Max | Access Time | Organization | Output Characteristics | Memory Width | Address Bus Width | Density | Standby Current-Max | Memory Density | Access Time (Max) | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Output Enable | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71321LA25PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 16K-Bit 2K x 8 25ns 64-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | AUTOMATIC POWER DOWN | - | QUAD | GULL WING | 260 | 1 | 5V | 0.8mm | - | - | 30 | 64 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 2kB | 2 | 220mA | - | - | - | 25 ns | - | 3-STATE | - | 22b | 16 kb | 0.004A | - | - | COMMON | Asynchronous | 8b | 2V | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71321LA25PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V30L25TFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 8K-Bit 1K x 8 25ns 64-Pin STQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 64 | - | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.5mm | - | - | 30 | 64 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 1kB | 2 | 120mA | - | - | - | 25 ns | 1KX8 | 3-STATE | - | 10b | 8 kb | 0.003A | - | - | COMMON | Asynchronous | 8b | 3V | - | 1.6mm | 10mm | 10mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V30L25TFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71256SA15YAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 256KBIT 15NS 28SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | - | - | 28 | - | RAM, SRAM - Asynchronous | - | 1997 | e0 | no | - | 3 (168 Hours) | 28 | EAR99 | - | 70°C | 0°C | - | - | DUAL | J BEND | 225 | 1 | 5V | - | - | - | 20 | 28 | - | Not Qualified | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | - | 1 | 150mA | - | - | - | 15 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | - | - | - | COMMON | Asynchronous | 8b | - | YES | 3.556mm | - | - | - | - | RoHS Compliant | - | ||
| IDT71256SA15Y | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71321SA25JGAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 16KBIT 25NS 52PLCC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | LCC | YES | - | - | RAM, SRAM | - | 2008 | e3 | yes | - | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | AUTOMATIC POWER DOWN | 8542.32.00.41 | QUAD | J BEND | 260 | 1 | 5V | 1.27mm | - | - | 30 | 52 | S-PQCC-J52 | Not Qualified | - | 5.5V | 5V | COMMERCIAL | 4.5V | Parallel | - | - | - | 2 | - | ASYNCHRONOUS | - | 0.22mA | - | 2KX8 | 3-STATE | 8 | - | - | 0.015A | 16384 bit | 25 ns | COMMON | - | - | 4.5V | - | 4.572mm | 19.1262mm | 19.1262mm | - | - | RoHS Compliant | - | ||
| 71321SA25JG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V547S80PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx36 ZBT SYNC 3.3V FLOW-THRU SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | - | TQFP | YES | 100 | 95MHz | RAM, SDR, SRAM | - | 2015 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | - | QUAD | FLAT | 260 | 1 | 3.3V | 0.635mm | - | - | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | - | - | - | 0.25mA | 8 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | - | - | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V547S80PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S150BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 3.8ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 150MHz | RAM, SDR, SRAM | - | 2009 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | 150MHz | 30 | 119 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 305mA | - | - | - | 3.8 ns | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.07A | - | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V67603S150BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V016SA12YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 44 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 128kB | 1 | 150mA | - | - | - | 12 ns | - | 3-STATE | - | 16b | 1 Mb | - | - | - | COMMON | Asynchronous | 16b | 3V | - | 3.683mm | 28.6mm | 10.2mm | 2.9mm | No | RoHS Compliant | Lead Free | ||
| 71V016SA12YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIDT71V256SA15PZAnlielectronics Тип | Integrated Device Technology (IDT) |
IC SRAM 256KBIT 15NS 28TSOP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | TSSOP | YES | - | - | RAM, SRAM - Asynchronous | - | 1997 | e0 | - | - | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | - | 8542.32.00.41 | DUAL | GULL WING | 240 | 1 | 3.3V | 0.55mm | not_compliant | - | 20 | 28 | R-PDSO-G28 | Not Qualified | - | 3.6V | 3.3V | COMMERCIAL | 3V | Parallel | - | - | - | 1 | - | - | - | 0.085mA | - | 32KX8 | 3-STATE | 8 | - | - | 0.002A | 262144 bit | 15 ns | COMMON | - | - | 3V | YES | 1.2mm | 11.8mm | 8mm | - | - | Non-RoHS Compliant | - | ||
| IDT71V256SA15PZ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S75PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 7.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | - | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | - | 100MHz | 30 | 100 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 275mA | - | - | - | 7.5 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.04A | - | - | COMMON | Synchronous | 36b | - | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3557S75PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3556SA133BGGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2006 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | - | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | - | 133MHz | 30 | 119 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.465V | 3.135V | 512kB | 1 | 310mA | - | - | - | 4.2 ns | - | 3-STATE | - | 17b | 4.5 Mb | 0.045A | - | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Lead Free | ||
| 71V3556SA133BGGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V3589S166BCGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Dual 3.3V 2.25M-Bit 64K x 36 12ns/3.6ns 256-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | 166MHz | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | Active | 3 (168 Hours) | 256 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | - | BOTTOM | BALL | - | 1 | 3.3V | 1mm | - | 166MHz | - | 256 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | 256kB | 2 | 500mA | - | - | - | 20 ns | 64KX36 | 3-STATE | - | 32b | 2.3 Mb | 0.03A | - | - | COMMON | Synchronous | 36b | - | - | 1.7mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 70V3589S166BCG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7008L15JGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 512K-Bit 64K x 8 15ns 84-Pin PLCC Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | PLCC | - | 84 | - | RAM, SDR, SRAM | Bulk | 2006 | e3 | yes | Active | 3 (168 Hours) | 84 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | QUAD | - | 260 | 1 | 5V | - | - | - | - | 84 | - | - | 5V | - | 5V | COMMERCIAL | - | Parallel | 5.5V | 4.5V | 64kB | 2 | 325mA | - | - | - | 15 ns | 64KX8 | 3-STATE | - | 16b | 512 kb | 0.005A | - | - | COMMON | Asynchronous | 8b | - | - | - | 29.21mm | 29.21mm | 3.63mm | No | RoHS Compliant | Lead Free | ||
| 7008L15JG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S12BEGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TFBGA | - | 48 | - | RAM, SDR, SRAM - Asynchronous | - | 2012 | e1 | yes | Active | 3 (168 Hours) | 48 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | - | BOTTOM | BALL | 260 | 1 | 3.3V | 0.75mm | - | - | - | 48 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | - | - | - | 12 ns | - | 3-STATE | - | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 9mm | 9mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V416S12BEG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256L25YGI8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 25ns 28-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | MATTE TIN | 85°C | -40°C | - | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | - | 28 | - | - | 5V | - | 5V | INDUSTRIAL | - | Parallel | 5.5V | 4.5V | 32kB | 1 | 125mA | - | - | - | 25 ns | 32KX8 | 3-STATE | - | 15b | 256 kb | - | - | - | COMMON | Asynchronous | 8b | 2V | - | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256L25YGI8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424S15YG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | - | - | 36 | - | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2009 | e3 | yes | Active | 3 (168 Hours) | 36 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | - | 36 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 160mA | - | - | - | 15 ns | - | 3-STATE | - | 19b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 8b | 3V | - | 3.683mm | 23.4mm | 10.2mm | 2.2mm | No | RoHS Compliant | Lead Free | ||
| 71V424S15YG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V659S12BFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 4.5M-Bit 128K x 36 12ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | - | 2009 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | - | - | BOTTOM | BALL | 225 | 1 | 3.3V | 0.8mm | - | - | 20 | 208 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 465mA | - | - | - | 12 ns | - | 3-STATE | - | 34b | 4.5 Mb | 0.015A | - | - | COMMON | Asynchronous | 36b | - | - | - | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V659S12BF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V67603S133BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 119-Pin BGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | BGA | - | 119 | 133MHz | RAM, SDR, SRAM | - | 2007 | e0 | no | Active | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | - | BOTTOM | BALL | 225 | 1 | 3.3V | - | - | 133MHz | 20 | 119 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.465V | 3.135V | 1.1MB | 1 | 260mA | - | - | - | 4.2 ns | 256KX36 | 3-STATE | - | 18b | 9 Mb | 0.05A | - | - | COMMON | Synchronous | 36b | - | - | 2.36mm | 14mm | 22mm | 2.15mm | No | RoHS Compliant | Contains Lead | ||
| 71V67603S133BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V659S12BCIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 128Kx36 STD-PWR 3.3V DUAL-PORT RAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | - | RAM, SDR, SRAM | Bulk | 2003 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | - | BOTTOM | BALL | 225 | 1 | 3.3V | 1mm | - | - | - | 256 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.45V | 3.15V | 512kB | 2 | 515mA | - | - | - | 12 ns | - | 3-STATE | - | 34b | 4.5 Mb | 0.015A | - | - | COMMON | Asynchronous | 36b | - | - | 1.5mm | 17mm | 17mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V659S12BCI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V424L10PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2008 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | - | 3.3V | - | - | INDUSTRIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | - | - | - | - | 10 ns | - | 3-STATE | - | 19b | 4 Mb | - | - | - | COMMON | Asynchronous | 8b | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V424L10PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416S12PHGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | 2005 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | - | 30 | 44 | - | - | 3.3V | - | - | COMMERCIAL | - | Parallel | 3.6V | 3V | 512kB | 1 | 180mA | - | 180mA | - | 12 ns | - | 3-STATE | - | 18b | 4 Mb | 0.02A | - | - | COMMON | Asynchronous | 16b | 3V | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416S12PHG |
Индекс :
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