| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Package / Case | Surface Mount | Number of Pins | Frequency(Max) | Memory Types | Usage Level | Packaging | Published | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Qualification Status | Operating Supply Voltage | Power Supplies | Temperature Grade | Interface | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Nominal Supply Current | Access Time | Organization | Output Characteristics | Address Bus Width | Density | Standby Current-Max | Screening Level | I/O Type | Sync/Async | Word Size | Standby Voltage-Min | Height Seated (Max) | Length | Width | Thickness | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Тип71V3558SA166BQGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 3.5ns 165-Pin CABGA Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | - | - | 165 | 166MHz | RAM, SDR, SRAM | - | - | 2013 | e1 | yes | Active | 3 (168 Hours) | 165 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | - | BOTTOM | BALL | 260 | 1 | 3.3V | - | 166MHz | 30 | 165 | - | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 350mA | 3.5 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | 15mm | 13mm | 1.2mm | No | RoHS Compliant | Lead Free | ||
| 71V3558SA166BQG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75902S75PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | Bulk | 2005 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | QUAD | GULL WING | 260 | 1 | 2.5V | 0.65mm | 100MHz | - | 100 | - | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 295mA | 7.5 ns | - | - | 20b | 18 Mb | - | - | - | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71T75902S75PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T3339S200BCAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 512K X 18 DP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 256 | 200MHz | RAM, SDR, SRAM | - | Bulk | 2010 | e0 | no | Active | 3 (168 Hours) | 256 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 2.5V | 1mm | 200MHz | 20 | 256 | Not Qualified | 2.5V | - | COMMERCIAL | Parallel | 2.6V | 2.4V | 1.1MB | 2 | 525mA | 3.4 ns | - | 3-STATE | 38b | 9 Mb | 0.015A | - | COMMON | Synchronous | 18b | - | 1.5mm | 17mm | 17mm | 1.4mm | - | RoHS Compliant | Contains Lead | ||
| 70T3339S200BC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V416L15PHGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | GULL WING | 260 | 1 | 3.3V | 0.8mm | - | 30 | 44 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 512kB | 1 | 160mA | 15 ns | - | 3-STATE | 18b | 4 Mb | - | - | COMMON | Asynchronous | 16b | 3V | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71V416L15PHGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA10TYG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 10ns 32-Pin SOJ T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | Tape & Reel | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3.15V | 128kB | 1 | 145mA | 10 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | - | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA10TYG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71T75802S100BGGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 2.5V CORE ZBT X18 18M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | BGA | - | 119 | 100MHz | RAM, SDR, SRAM | - | - | 2012 | e1 | yes | Active | 3 (168 Hours) | 119 | - | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 260 | 1 | 2.5V | - | 100MHz | 30 | 119 | Not Qualified | 2.5V | - | INDUSTRIAL | Parallel | 2.625V | 2.375V | 2.3MB | 1 | 195mA | 5 ns | - | 3-STATE | 20b | 18 Mb | 0.06A | - | COMMON | Synchronous | 18b | 2.38V | 2.36mm | 14mm | 22mm | 2.15mm | - | RoHS Compliant | Lead Free | ||
| 71T75802S100BGGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116LA55DBAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 55ns 24-Pin CDIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 10 Weeks | Through Hole | CDIP | - | 24 | - | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | Active | 1 (Unlimited) | 24 | - | Tin/Lead (Sn63Pb37) | 125°C | -55°C | - | DUAL | - | 240 | 1 | 5V | 2.54mm | - | - | 24 | - | 5V | 5V | MILITARY | Parallel | 5.5V | 4.5V | 2kB | 1 | 85mA | 55 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.0003A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 4.826mm | 32mm | 15.24mm | 2.9mm | No | RoHS Compliant | Contains Lead | ||
| 6116LA55DB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71256L35YGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2011 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | J BEND | 260 | 1 | 5V | - | - | - | 28 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 32kB | 1 | 115mA | 35 ns | 32KX8 | 3-STATE | 15b | 256 kb | - | - | COMMON | Asynchronous | 8b | 2V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71256L35YG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7024S55PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 64K-Bit 4K x 16 55ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | - | 2000 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 20 | 100 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | 250mA | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | - | COMMON | Asynchronous | 16b | - | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7024S55PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7024L20PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 5V 64K-Bit 4K x 16 20ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | - | TQFP | YES | 100 | - | RAM, SDR, SRAM | - | - | 2000 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 5V | 0.5mm | - | 20 | 100 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 8kB | 2 | - | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | - | COMMON | - | - | 2V | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 7024L20PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70T659S10BFIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 2.5V 4.5M-Bit 128K x 36 10ns 208-Pin CABGA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 208 | - | RAM, SDR, SRAM | - | Bulk | 2005 | e0 | no | Active | 3 (168 Hours) | 208 | - | Tin/Lead (Sn63Pb37) | 85°C | -40°C | - | BOTTOM | BALL | 225 | 1 | 2.5V | 0.8mm | - | - | 208 | - | 2.5V | - | INDUSTRIAL | Parallel | 2.6V | 2.4V | 512kB | 2 | 445mA | 10 ns | - | 3-STATE | 17b | 4.5 Mb | - | - | COMMON | Asynchronous | 36b | - | 1.5mm | 15mm | 15mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70T659S10BFI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип6116SA15SOGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 16K-Bit 2K x 8 15ns 24-Pin SOIC Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | SOIC | - | 24 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 5V | - | - | 30 | 24 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 1 | 105mA | 15 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.002A | - | COMMON | Asynchronous | 8b | - | - | 15.4mm | 7.6mm | 2.34mm | No | RoHS Compliant | Lead Free | ||
| 6116SA15SOG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V256SA15YGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 256K-Bit 32K x 8 15ns 28-Pin SOJ
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 28 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2006 | e3 | yes | Active | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 28 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 32kB | 1 | 85mA | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | - | COMMON | Asynchronous | 8b | 3V | - | 17.9mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V256SA15YGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71016S15PHG8Anlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 5V 1M-Bit 64K x 16 15ns 44-Pin TSOP-II T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TSOP | - | 44 | - | RAM, SDR, SRAM - Asynchronous | - | Tape & Reel | 2007 | e3 | yes | Active | 3 (168 Hours) | 44 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | - | DUAL | GULL WING | 260 | 1 | 5V | 0.8mm | - | 30 | 44 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 128kB | 1 | 180mA | 15 ns | - | 3-STATE | 16b | 1 Mb | - | - | COMMON | Asynchronous | 16b | - | - | 18.41mm | 10.16mm | 1mm | No | RoHS Compliant | Lead Free | ||
| 71016S15PHG8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V35761S166BGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4 MEG PBSRAM W/ FAST TC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | BGA | - | 119 | 166MHz | RAM, SDR, SRAM | - | - | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | - | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED ARCHITECTURE | BOTTOM | BALL | 225 | 1 | 3.3V | - | 166MHz | 20 | 119 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 320mA | 3.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.03A | - | COMMON | Synchronous | 36b | - | 2.36mm | 14mm | 22mm | 2.15mm | - | RoHS Compliant | Contains Lead | ||
| 71V35761S166BG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3559S80PFGAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 4M ZBT 3.3V I/O SLOW X18
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 95MHz | 30 | 100 | Not Qualified | 3.3V | - | COMMERCIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 250mA | 8 ns | - | 3-STATE | 18b | 4.5 Mb | 0.04A | - | COMMON | Synchronous | 18b | - | - | 20mm | 14mm | 1.4mm | - | RoHS Compliant | Lead Free | ||
| 71V3559S80PFG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип70V25S25PFAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Dual 3.3V 128K-Bit 8K x 16 25ns 100-Pin TQFP Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | TQFP | - | 100 | - | RAM, SDR, SRAM | - | - | 2001 | e0 | no | Active | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | QUAD | GULL WING | 240 | 1 | 3.3V | 0.5mm | - | 20 | 100 | - | 3.3V | - | COMMERCIAL | Parallel | 3.6V | 3V | 16kB | 2 | 190mA | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | - | COMMON | Asynchronous | 16b | 3V | 1.6mm | 14mm | 14mm | 1.4mm | No | RoHS Compliant | Contains Lead | ||
| 70V25S25PF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип7132LA55PAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM 16K(2KX8)CMOS DUALPORT RA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | DIP | - | 48 | - | RAM, SDR, SRAM | - | Bulk | 2007 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | DUAL | - | 245 | 1 | 5V | - | - | - | 48 | - | 5V | 5V | COMMERCIAL | Parallel | 5.5V | 4.5V | 2kB | 2 | 110mA | 55 ns | - | 3-STATE | 22b | 16 kb | 0.0015A | - | COMMON | Asynchronous | 8b | 2V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | No | RoHS Compliant | Contains Lead | ||
| 7132LA55P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V3557S85PFGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 8.5ns 100-Pin TQFP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 12 Weeks | Surface Mount | TQFP | - | 100 | 100MHz | RAM, SDR, SRAM | - | - | 2009 | e3 | yes | Active | 3 (168 Hours) | 100 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECHTURE | QUAD | GULL WING | 260 | 1 | 3.3V | 0.65mm | 91MHz | 30 | 100 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.465V | 3.135V | 512kB | 1 | 235mA | 8.5 ns | - | 3-STATE | 17b | 4.5 Mb | 0.045A | - | COMMON | Synchronous | 36b | - | - | 20mm | 14mm | 1.4mm | No | RoHS Compliant | Lead Free | ||
| 71V3557S85PFGI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Тип71V124SA15TYGIAnlielectronics Тип | Integrated Device Technology (IDT) |
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube/Tray
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 7 Weeks | Surface Mount | - | - | 32 | - | RAM, SDR, SRAM - Asynchronous | - | - | 2013 | e3 | yes | Active | 3 (168 Hours) | 32 | - | Matte Tin (Sn) - annealed | 85°C | -40°C | - | DUAL | J BEND | 260 | 1 | 3.3V | - | - | - | 32 | - | 3.3V | - | INDUSTRIAL | Parallel | 3.6V | 3V | 128kB | 1 | 120mA | 15 ns | - | 3-STATE | 17b | 1 Mb | - | - | COMMON | Asynchronous | 8b | 3V | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | No | RoHS Compliant | Lead Free | ||
| 71V124SA15TYGI |
Индекс :
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