Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page50

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Mounting Feature	Shell Material	Supplier Device Package	Dielectric Material	Housing Material	Insert Material	Body Material	Backshell Material, Plating	Package Quantity	Approvals	Base Product Number	Brand	Contact Finish Mating	Contact Materials	Current-IEC	Current-UL	DRAM Type	Factory Pack QuantityFactory Pack Quantity	Handle Length	Handle Material	Handle Width	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Temperature	Moisture Sensitive	Mounting Orientation	Mounting Styles	Package	PowerSupply	Primary Material	Product Status	RoHS	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Torque-Screw	Voltage-UL	Voltage, Rating	Operating Temperature	Packaging	Series	Size / Dimension	Part Status	Termination	Connector Type	Type	Number of Positions	Max Operating Temperature	Min Operating Temperature	Color	Applications	Number of Rows	Gender	Capacitance	Fastening Type	Subcategory	Contact Type	Current Rating (Amps)	Pitch	Technology	Voltage - Supply	Orientation	Shielding	Ingress Protection	Insulation Height	Style	Frequency	Frequency Stability	Output	Shell Finish	Shell Size - Insert	Termination Style	Function	Base Resonator	Current - Supply (Max)	Housing Color	ESR (Equivalent Series Resistance)	Current - Supply (Disable) (Max)	Row Spacing	Note	Contact Tail Length	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Load Capacitance	Impedance	Number of Levels	Operating Mode	Body Plating	Shell Size, MIL	Accessory Type	Frequency Tolerance	Clock Frequency	Spread Spectrum Bandwidth	Cable Opening	Contact Mating Finish	Lead/Base Style	Access Time	Memory Format	Memory Interface	Data Bus Width	Wire Gauge or Range - AWG	Contact Termination	Organization	Positions Per Level	Plug Wire Entry	Header Orientation	Write Cycle Time - Word, Page	Wire Gauge or Range - mm²	Product Type	Wire Strip Length	Density	Screw Size	Display Type	Max Frequency	ESD Protection	Varistor Voltage	Absolute Pull Range (APR)	Finish	Key Type	Features	Keying	Display Digits	Product Category	Cam Length	Memory Organization	Height Seated (Max)	Length	Contact Finish Thickness - Mating	Head Height	Material Flammability Rating	Radiation Hardening	Ratings

Изображение	Тип	Марка	Объяснение	Количество	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Mounting Feature	Shell Material	Supplier Device Package	Dielectric Material	Housing Material	Insert Material	Body Material	Backshell Material, Plating	Package Quantity	Approvals	Base Product Number	Brand	Contact Finish Mating	Contact Materials	Current-IEC	Current-UL	DRAM Type	Factory Pack QuantityFactory Pack Quantity	Handle Length	Handle Material	Handle Width	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Temperature	Moisture Sensitive	Mounting Orientation	Mounting Styles	Package	PowerSupply	Primary Material	Product Status	RoHS	Supplier Package	Supply Voltage-Max	Supply Voltage-Min	Torque-Screw	Voltage-UL	Voltage, Rating	Operating Temperature	Packaging	Series	Size / Dimension	Part Status	Termination	Connector Type	Type	Number of Positions	Max Operating Temperature	Min Operating Temperature	Color	Applications	Number of Rows	Gender	Capacitance	Fastening Type	Subcategory	Contact Type	Current Rating (Amps)	Pitch	Technology	Voltage - Supply	Orientation	Shielding	Ingress Protection	Insulation Height	Style	Frequency	Frequency Stability	Output	Shell Finish	Shell Size - Insert	Termination Style	Function	Base Resonator	Current - Supply (Max)	Housing Color	ESR (Equivalent Series Resistance)	Current - Supply (Disable) (Max)	Row Spacing	Note	Contact Tail Length	Interface	Max Supply Voltage	Min Supply Voltage	Memory Size	Load Capacitance	Impedance	Number of Levels	Operating Mode	Body Plating	Shell Size, MIL	Accessory Type	Frequency Tolerance	Clock Frequency	Spread Spectrum Bandwidth	Cable Opening	Contact Mating Finish	Lead/Base Style	Access Time	Memory Format	Memory Interface	Data Bus Width	Wire Gauge or Range - AWG	Contact Termination	Organization	Positions Per Level	Plug Wire Entry	Header Orientation	Write Cycle Time - Word, Page	Wire Gauge or Range - mm²	Product Type	Wire Strip Length	Density	Screw Size	Display Type	Max Frequency	ESD Protection	Varistor Voltage	Absolute Pull Range (APR)	Finish	Key Type	Features	Keying	Display Digits	Product Category	Cam Length	Memory Organization	Height Seated (Max)	Length	Contact Finish Thickness - Mating	Head Height	Material Flammability Rating	Radiation Hardening	Ratings
	Mfr. Тип MTFC128GAZAOTD-AAT Anlielectronics Тип	Micron Technology	UFS 1T Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Free Hanging (In-Line)	-	-	Aluminum Alloy	-	-	-	-	-	-	-	-	CA310	Micron	Gold	-	-	-	-	1520	-	-	-	Micron Technology	-	-	-	-	ITT Cannon, LLC	-	Yes	-	-	Bulk	-	Metal	Active	Details	TFBGA	-	-	-	-	50V	-55°C ~ 125°C	Tray	MIL-DTL-5015, CA-B	-	-	Crimp	Plug, Female Sockets	-	17	-	-	Olive Drab	-	-	-	-	Reverse Bayonet Lock	-	-	22A	-	-	-	N (Normal)	Shielded	IP67 - Dust Tight, Waterproof	-	-	-	-	-	Olive Drab Cadmium	20-29	-	-	-	-	-	-	-	-	-	-	-	-	-	1 TB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Universal Flash Storage (UFS)	-	-	-	-	-	-	-	-	-	-	-	-	-	Universal Flash Storage - UFS	-	-	-	-	19.7µin (0.50µm)	-	-	-	-
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	Mfr. Тип MT29F512G08EBLGEB27C3WC1-F Anlielectronics Тип	Micron Technology	MICMT29F512G08EBLGEB27C3WC1-F B27C WAFER Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Free Hanging (In-Line)	-	-	Aluminum Alloy	-	-	-	-	-	-	-	-	CA310	-	Silver	-	-	-	-	-	-	-	-	-	-	-	-	-	ITT Cannon, LLC	-	-	-	-	Bulk	-	Metal	Active	-	-	-	-	-	-	50V	-55°C ~ 125°C	-	MIL-DTL-5015, CA-B	-	-	Crimp	Plug, Male Pins	-	5	-	-	Olive Drab	-	-	-	-	Reverse Bayonet Lock	-	-	41A, 245A	-	-	-	N (Normal)	-	IP67 - Dust Tight, Waterproof	-	-	-	-	-	Olive Drab Cadmium	32-1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Shrink Boot Adapter	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08EBLGEB27C3WC1-F Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E128M32D2FW-046 AIT:A Anlielectronics Тип	Micron Technology	LPDDR4 4G 128MX32 FBGA DDP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Free Hanging (In-Line)	200-TFBGA	-	Stainless Steel	200-TFBGA (10x14.5)	-	-	-	-	-	-	-	D38999/26LG	-	Gold	Copper Alloy	-	-	-	-	-	-	-	-	-	2.133 GHz	+ 85 C	Volatile	Amphenol Aerospace Operations	- 40 C	-	-	SMD/SMT	Bulk	-	Metal	Active	-	-	1.1 V	-	-	-	-	-65°C ~ 200°C	-	Military, MIL-DTL-38999 Series III, Tri-Start™ TV	-	-	Crimp	Plug, Female Sockets	SDRAM Mobile - LPDDR4	11	-	-	Silver	Aviation, Marine, Military	-	-	-	Threaded	-	-	-	-	SDRAM - Mobile LPDDR4	1.06V ~ 1.17V	N (Normal)	Unshielded	Environment Resistant	-	-	-	-	-	Nickel	21-11	-	-	-	-	-	-	-	-	-	-	-	-	-	4Gbit	-	-	-	-	-	G	-	-	2.133 GHz	-	-	-	-	3.5 ns	DRAM	Parallel	32 bit	-	-	128 M x 32	-	-	-	18ns	-	-	-	-	-	-	-	-	-	-	-	-	Coupling Nut, Self Locking	-	-	-	-	128M x 32	-	-	100.0µin (2.54µm)	-	-	-	-
MT53E128M32D2FW-046 AIT:A Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT25QU256ABA8E12-MAAT Anlielectronics Тип	Micron Technology	SPI FLASH NOR SPI 64MX4 TBGA Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	24-TBGA	-	-	24-T-PBGA (6x8)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Non-Volatile	3M	-	-	-	-	Box	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 105°C (TA)	-	-	-	-	-	-	Shaft Balancer	-	-	-	-	-	-	-	-	-	-	-	-	-	FLASH - NOR (SLC)	1.7V ~ 2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	256Mbit	-	-	-	-	-	-	-	-	166 MHz	-	-	-	-	5 ns	FLASH	SPI - Quad I/O	-	-	-	-	-	-	-	1.8ms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	32M x 8	-	-	-	-	-	-	-
MT25QU256ABA8E12-MAAT Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E1G64D4HJ-046 AAT:A Anlielectronics Тип	Micron Technology	LPDDR4 64G 1GX64 FBGA QDP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Through Hole	-	-	-	-	-	Thermoplastic	-	-	-	-	-	VX14	-	-	Brass	-	7 A	-	-	-	-	-	-	-	-	-	-	Amphenol Anytek	-	-	-	-	Bulk	-	-	Active	-	-	-	-	-	150 V	-	-40°C ~ 115°C	-	VX	-	-	-	-	Header, Male Pins, Shrouded (4 Side)	14	-	-	Orange	-	-	-	-	-	-	-	-	0.138 (3.50mm)	-	-	-	-	-	0.413 (10.49mm)	-	-	-	-	-	-	Solder	-	-	-	-	-	-	-	-	0.138 (3.50mm)	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	Tin	-	-	-	-	-	-	-	-	7	-	90°, Right Angle	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	UL94 V-0	-	-
MT53E1G64D4HJ-046 AAT:A Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT41K512M16VRP-107 AAT:P TR Anlielectronics Тип	Micron Technology	DRAM Chip DDR3-1866 8G-bit 512M x 16 T/R Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	4-SMD, No Lead	-	-	96-FBGA (8x14)	-	-	-	-	-	-	-	-	Micron	-	-	-	-	-	2000	-	-	-	Micron Technology	-	-	-	Volatile	Suntsu Electronics, Inc.	-	-	-	SMD/SMT	Bulk	-	-	Active	-	-	1.45 V	1.283 V	-	-	-	-40°C ~ 85°C	Reel	SXT324	0.126 L x 0.098 W (3.20mm x 2.50mm)	-	-	-	MHz Crystal	-	-	-	-	-	-	-	-	-	Memory & Data Storage	-	-	-	SDRAM - DDR3L	1.283V ~ 1.45V	-	-	-	-	-	12 MHz	±30ppm	-	-	-	-	-	-	-	-	100 Ohms	-	-	-	-	-	-	-	8Gbit	12pF	-	-	Fundamental	-	-	-	±15ppm	933 MHz	-	-	-	-	20 ns	DRAM	Parallel	-	-	-	-	-	-	-	15ns	-	DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	-	512M x 16	0.031 (0.80mm)	-	-	-	-	-	-
MT41K512M16VRP-107 AAT:P TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT29GZ6A6BPIET-046AAT.112 Anlielectronics Тип	Micron Technology	NAND MCP 16GB Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Free Hanging (In-Line)	149-VFBGA	-	Aluminum	149-VFBGA (8x9.5)	-	-	Thermoplastic	-	-	-	-	TVS06RF	Micron	Gold	Copper Alloy	-	-	-	1260	-	-	-	Micron Technology	-	-	-	Non-Volatile, Volatile	Amphenol Aerospace Operations	-	-	-	-	Bulk	-	Metal	Active	-	-	-	-	-	-	-	-65°C ~ 200°C	Tray	MIL-DTL-38999 Series III, Tri-Start™ TV	-	-	Crimp	Plug, Male Pins	-	6	-	-	Silver	Aviation, Marine, Military	-	-	-	Threaded	Memory & Data Storage	-	-	-	FLASH - NAND (SLC), DRAM - LPDDR4	1.06V ~ 1.17V, 1.7V ~ 1.95V	E	Shielded	Environment Resistant	-	-	-	-	-	Electroless Nickel	17-6	-	-	-	-	-	-	-	-	-	-	-	-	-	8Gbit (NAND), 8Gbit (LPDDR4)	-	-	-	-	-	-	-	-	2.133 GHz	-	-	-	-	25 ns	FLASH, RAM	ONFI	-	-	-	-	-	-	-	20ns, 30ns	-	Multichip Packages	-	-	-	-	-	-	-	-	-	-	Coupling Nut, Self Locking	-	-	Multichip Packages	-	1G x 8 (NAND), 512M x 16 (LPDDR4)	-	-	50.0µin (1.27µm)	-	-	-	-
MT29GZ6A6BPIET-046AAT.112 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT62F512M64D4EK-031 AUT:B TR Anlielectronics Тип	Micron Technology	LPDDR5 32G 512MX64 FBGA QDP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	4-SMD, No Lead	-	-	441-TFBGA (14x14)	-	-	-	-	-	-	-	SG-8101	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Volatile	EPSON	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 105°C	-	SG-8101	0.276 L x 0.197 W (7.00mm x 5.00mm)	-	-	-	XO (Standard)	-	-	-	-	-	-	-	-	-	-	-	-	-	SDRAM - Mobile LPDDR5	1.8V ~ 3.3V	-	-	-	-	-	11 MHz	±20ppm	CMOS	-	-	-	Standby (Power Down)	Crystal	6.8mA (Typ)	-	-	1.1µA	-	-	-	-	-	-	32Gbit	-	-	-	-	-	-	-	-	3.2 GHz	-	-	-	-	-	DRAM	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	512M x 64	0.055 (1.40mm)	-	-	-	-	-	-
MT62F512M64D4EK-031 AUT:B TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E768M64D4SP-046 WT:B TR Anlielectronics Тип	Micron Technology	LPDDR4 48G 768MX64 FBGA QDP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	FBGA	-	-	-	-	-	-	-	-	-	-	-	Micron	-	-	-	-	-	2000	-	-	-	Micron Technology	-	-	-	-	Micron Technology Inc.	-	-	-	SMD/SMT	Tape & Reel (TR)	-	-	Active	-	-	-	-	-	-	-	-	Reel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	-	-	-	-	-	-	-	-	-
MT53E768M64D4SP-046 WT:B TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E768M64D4SP-046 WT:B Anlielectronics Тип	Micron Technology	DRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	FBGA	-	-	-	-	-	-	-	-	-	-	-	Micron	-	-	-	-	-	1360	-	-	-	Micron Technology	-	-	-	-	Micron Technology Inc.	-	-	-	SMD/SMT	Tray	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Memory & Data Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	-	-	-	-	-	-	-	-	-
MT53E768M64D4SP-046 WT:B Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT29F256G08EBHBFB16C3WC1-F Anlielectronics Тип	Micron Technology	TLC 256G DIE 32GX8 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Micron Technology Inc.	-	-	-	-	Box	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBHBFB16C3WC1-F Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M29W640GSL70NA6E Anlielectronics Тип	Micron Technology	NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 70ns 48-Pin TSOP Tray Сборник данных Сравнение	Min.:1 Mult.:1	Obsolete (Last Updated: 2 years ago)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NOR	-	-	-	-	-	-	-	-	-	Non-Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	85 °C	-40 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Parallel	3.6 V	2.7 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	64 Mb	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	No	-
M29W640GSL70NA6E Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип BLS2K16G4S26BFSD Anlielectronics Тип	Micron Technology	DRAM Module DDR4 2x16Gbyte 2666MT/s SODIMM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BLS2K16G4S26BFSD Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT7DEQHAAA-A1 Anlielectronics Тип	Micron Technology	DRAM Module DDR3L SDRAM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	cUL, UL	-	-	-	-	-	-	-	-	-	-	-	Simpson Electric	H335125120	-	-	-	-	-	-	-	-	-	120 VAC	-	-	-	-	-	-	-	-	-	32-122 °F	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	LED	-	-	-	-	-	-	-	-	3.5	-	-	-	-	-	-	-	-	-	-
MT7DEQHAAA-A1 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E256M16D1FW-046 AAT:B TR Anlielectronics Тип	Micron Technology	LPDDR4 4G 256MX16 FBGA Сборник данных Сравнение	Min.:1 Mult.:1	-	Tin	-	Surface Mount	200-TFBGA	-	-	200-TFBGA (10x14.5)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Volatile	Micron Technology Inc.	-	-	-	-	Tape & Reel (TR)	-	-	Active	Compliant	-	-	-	-	-	-	-40°C ~ 105°C (TC)	-	Automotive, AEC-Q100	-	-	-	-	-	-	85 °C	-40 °C	-	-	-	-	190 pF	-	-	-	-	-	SDRAM - Mobile LPDDR4X	1.06V ~ 1.17V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4Gbit	-	-	-	-	-	-	-	-	2.133 GHz	-	-	-	Radial	3.5 ns	DRAM	Parallel	-	-	-	-	-	-	-	18ns	-	-	-	-	-	-	-	No	360 V	-	-	-	-	-	-	-	-	256M x 16	-	-	-	-	-	-	-
MT53E256M16D1FW-046 AAT:B TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E512M16D1FW-046 AAT:D TR Anlielectronics Тип	Micron Technology	LPDDR4 8G 512MX16 FBGA Сборник данных Сравнение	Min.:1 Mult.:1	-	Gold	Cable, Free Hanging	Surface Mount	200-TFBGA	-	-	200-TFBGA (10x14.5)	PTFE	-	-	Brass	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.133 GHz	+ 105 C	Volatile	Micron Technology Inc.	- 40 C	-	-	SMD/SMT	Tape & Reel (TR)	-	-	Active	Compliant	-	1.1 V	-	-	-	500 V	-40°C ~ 105°C (TC)	Bulk	Automotive, AEC-Q100	-	-	Crimp	Plug, Socket, TNC	SDRAM Mobile - LPDDR4	-	165 °C	-65 °C	-	-	-	Male	-	Threaded	-	-	-	-	SDRAM - Mobile LPDDR4X	1.06V ~ 1.17V	Straight	-	-	-	-	4 GHz	-	-	-	-	-	-	-	-	Silver	-	-	-	-	-	-	-	-	8Gbit	-	50 Ω	-	-	Nickel	-	-	-	2.133 GHz	-	-	-	-	3.5 ns	DRAM	Parallel	16 bit	-	-	512 M x 16	-	-	-	18ns	-	-	-	-	-	-	4 GHz	-	-	-	-	-	-	-	-	-	-	512M x 16	-	28.47 mm	-	-	-	No	-
MT53E512M16D1FW-046 AAT:D TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT29F128G8CFABBWP-12:B TR Anlielectronics Тип	Micron Technology	IC FLASH 128GBIT 48TSOP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Free Hanging (In-Line)	48-TFSOP (0.724, 18.40mm Width)	-	-	48-TSOP I	-	-	-	-	-	-	-	MT29F128G8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Micron Technology Inc.	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	-	-	-	-	-	-	-	Bulk	AT Series™	-	Active	-	Plug	-	4	-	-	Black	-	2	-	-	Latch Lock	-	Female Socket	-	--	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	--	Contacts Not Included	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Crimp	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Sealed	-	-	-	-	-	-	-	-	-	-	-	-
MT29F128G8CFABBWP-12:B TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT62F1G64D8EK-031 AUT:B Anlielectronics Тип	Micron Technology	LPDDR5 64G 1GX64 FBGA 8DP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	441-TFBGA	-	-	441-TFBGA (14x14)	-	-	-	-	-	1	-	-	-	-	-	-	-	Mobile LPDDR5	-	160.0 mm	Zinc Alloy	35.0 mm	-	-	-	-	Volatile	Micron Technology Inc.	-	-	Universal	-	Box	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 125°C	-	Automotive, AEC-Q100	-	-	-	-	-	-	-	-	Silver Appearance	-	-	-	-	-	-	-	-	-	SDRAM - Mobile LPDDR5	1.05V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	64Gbit	-	-	-	-	-	-	-	-	3.2 GHz	-	-	-	-	313ps	DRAM	Parallel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Chrome-Plated	Keyed Different	-	Key Operated	-	-	-	1G x 64	-	-	-	12.0 mm	-	-	-
MT62F1G64D8EK-031 AUT:B Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT29GZ6A6BPIET-53AIT.112 Anlielectronics Тип	Micron Technology	Combo Memory LPDDR4 16G-bit Flash 149-Pin Surface Mount Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	149-VFBGA	-	-	149-VFBGA (8x9.5)	-	-	-	-	-	-	-	-	Micron	-	-	-	-	-	1260	-	-	-	Micron Technology	-	-	-	Non-Volatile, Volatile	Micron Technology Inc.	-	-	-	SMD/SMT	Box	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 85°C (TA)	-	Automotive, AEC-Q100	-	-	-	-	MassFlash/LPDDR4	-	-	-	-	-	-	-	-	-	Memory & Data Storage	-	-	-	FLASH - NAND (SLC), DRAM - LPDDR4	1.06V ~ 1.17V, 1.7V ~ 1.95V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	8Gbit	-	-	-	-	-	-	-	-	-	-	-	-	-	25 ns	FLASH, RAM	ONFI	-	-	-	-	-	-	-	30ns	-	Multichip Packages	-	-	-	-	-	-	-	-	-	-	-	-	-	Multichip Packages	-	1G x 8	-	-	-	-	-	-	-
MT29GZ6A6BPIET-53AIT.112 Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MT53E1G32D2FW-046 AIT:A TR Anlielectronics Тип	Micron Technology	LPDDR4 32G 1GX32 FBGA DDP Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	Surface Mount	200-TFBGA	-	-	200-TFBGA (10x14.5)	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Volatile	Micron Technology Inc.	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	-	-	-	-	-	-	-40°C ~ 95°C (TC)	-	Automotive, AEC-Q100	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SDRAM - Mobile LPDDR4X	1.06V ~ 1.17V	-	-	-	-	No Stopper	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	32Gbit	-	-	-	-	-	-	Cam	-	2.133 GHz	-	-	-	-	-	DRAM	Parallel	-	-	-	-	-	-	-	18ns	-	-	-	-	-	-	-	-	-	-	Zinc-Plated	-	-	-	-	-	31.0 mm	1G x 32	-	-	-	-	-	-	-
MT53E1G32D2FW-046 AIT:A TR Micron Technology RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: MTFC128GAZAOTD-AAT,MT29F512G08EBLGEB27C3WC1-F,MT53E128M32D2FW-046 AIT:A,MT25QU256ABA8E12-MAAT,MT53E1G64D4HJ-046 AAT:A.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)