Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page23

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип KM68512ALG-4 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 64KX8, 45ns, CMOS, PDSO32, 0.525 INCH, SOP-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	45 ns	-	SAMSUNG SEMICONDUCTOR INC	-	65536 words	64000	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP32,.56	SOP32,.56	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	1.27 mm	unknown	-	32	R-PDSO-G32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.07 mA	64KX8	3-STATE	3 mm	8	0.00005 A	524288 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	-	-	20.47 mm	11.43 mm
KM68512ALG-4 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6T4016U3C-RB10 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3 V	-	No	3A991.B.2.A	-	-	8542.32.00.41	DUAL	GULL WING	240	1	0.8 mm	compliant	30	44	R-PDSO-G44	Not Qualified	3.3 V	COMMERCIAL	2.7 V	-	ASYNCHRONOUS	0.045 mA	256KX16	3-STATE	1.2 mm	16	-	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	YES	-	18.41 mm	10.16 mm
K6T4016U3C-RB10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M64163PH-RF75 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	No	1.8 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.06 mA	4MX16	3-STATE	-	16	0.0003 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M64163PH-RF75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM6865BP-25 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	25 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.11 mA	8KX8	3-STATE	5.08 mm	8	0.001 A	65536 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	-	-	34.29 mm	7.62 mm
KM6865BP-25 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H560438J-LCB3 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 64MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	3	67108864 words	64000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	2.5 V	e6	Yes	EAR99	TIN BISMUTH	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	260	1	0.65 mm	unknown	-	-	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	0.27 mA	64MX4	3-STATE	1.2 mm	4	0.003 A	268435456 bit	-	COMMON	DDR1 DRAM	-	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H560438J-LCB3 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6X1008T2D-TB55 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 128KX8, 55ns, CMOS, PDSO32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	55 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP32,.8,20	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	GULL WING	-	-	0.5 mm	compliant	-	-	R-PDSO-G32	Not Qualified	-	COMMERCIAL	-	-	ASYNCHRONOUS	0.02 mA	128KX8	3-STATE	-	8	-	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	-	-	-
K6X1008T2D-TB55 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C4100AT-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, TSOP2-28/24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP24/28,.46	TSOP24/28,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	28/24	R-PDSO-G24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.1 mA	4MX4	3-STATE	1.2 mm	4	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	-	2048	-	-	FAST PAGE	-	NO	18.41 mm	10.16 mm
KM44C4100AT-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C256BJ-10 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 Сборник данных Сравнение	Min.:1 Mult.:1	YES	20	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ20/26,.34	SOJ20/26,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	20	R-PDSO-J20	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.06 mA	256KX4	3-STATE	3.68 mm	4	0.001 A	1048576 bit	-	COMMON	FAST PAGE DRAM	-	-	512	-	-	FAST PAGE	-	-	17.145 mm	7.62 mm
KM44C256BJ-10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C2560J-6 Anlielectronics Тип	Samsung Semiconductor	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
KM416C2560J-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип S524C20D21-DCB0 Anlielectronics Тип	Samsung Electro-Mechanics	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S524C20D21-DCB0 Samsung Electro-Mechanics RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V8104CK-6 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	32	R-PDSO-J32	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.1 mA	8MX8	3-STATE	3.76 mm	8	0.0005 A	67108864 bit	-	COMMON	EDO DRAM	-	-	4096	-	-	FAST PAGE WITH EDO	-	NO	20.96 mm	10.16 mm
KM48V8104CK-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V8100J-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO34, 0.500 INCH, PLASTIC, SOJ-34 Сборник данных Сравнение	Min.:1 Mult.:1	YES	34	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ34,.54	SOJ34,.54	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	34	R-PDSO-J34	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.16 mA	8MX8	3-STATE	3.76 mm	8	0.0005 A	67108864 bit	-	COMMON	FAST PAGE DRAM	-	-	4096	-	-	FAST PAGE	-	NO	22.23 mm	12.7 mm
KM48V8100J-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416S4030BT-F10 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	7 ns	100 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	54	R-PDSO-G54	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.12 mA	4MX16	3-STATE	1.2 mm	16	0.001 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
KM416S4030BT-F10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6F4008U2C-FF70 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 512KX8, 70ns, CMOS, PBGA48, 6.50 X 8.50 MM, 0.75 MM PITCH, FBGA-48 Сборник данных Сравнение	Min.:1 Mult.:1	YES	48	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA36,6X8,30	BGA36,6X8,30	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	No	3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	BOTTOM	BALL	-	1	0.75 mm	unknown	-	48	R-PBGA-B48	Not Qualified	3.3 V	INDUSTRIAL	2.7 V	-	ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	1.2 mm	8	0.000003 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	1.5 V	-	-	-	-	-	-	-	8.5 mm	6.5 mm
K6F4008U2C-FF70 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IM4G16D3FDBG-093I Anlielectronics Тип	Intelligent Memory Limited	DDR3L DRAM, 256MX16, CMOS, PBGA96, FBGA-96 Сборник данных Сравнение	Min.:1 Mult.:1	YES	96	-	1066 MHz	INTELLIGENT MEMORY LTD	-	268435456 words	256000000	95 °C	-40 °C	PLASTIC/EPOXY	TFBGA	FBGA-96	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	Yes	1.35 V	-	-	-	-	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.5V SUPPLY	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	1.45 V	-	1.283 V	1	SYNCHRONOUS	0.087 mA	256MX16	-	1.2 mm	16	0.042 A	4294967296 bit	-	COMMON	DDR3L DRAM	-	-	32768	4,8	4,8	MULTI BANK PAGE BURST	-	YES	13.5 mm	7.5 mm
IM4G16D3FDBG-093I Intelligent Memory Limited RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C1200BJ-5 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Сборник данных Сравнение	Min.:1 Mult.:1	YES	42	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ42,.44	SOJ42,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	42	R-PDSO-J42	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.16 mA	1MX16	3-STATE	3.76 mm	16	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	-	1024	-	-	FAST PAGE	-	NO	27.31 mm	10.16 mm
KM416C1200BJ-5 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C1000BZ-8 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX4, 80ns, CMOS, PZIP20, 0.400 INCH, PLASTIC, ZIP-20 Сборник данных Сравнение	Min.:1 Mult.:1	NO	20	80 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	ZIP	ZIP, ZIP20,.1	ZIP20,.1	RECTANGULAR	IN-LINE	Obsolete	ZIP	No	5 V	e0	No	EAR99	TIN LEAD	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	8542.32.00.02	ZIG-ZAG	THROUGH-HOLE	-	1	1.27 mm	unknown	-	20	R-PZIP-T20	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.07 mA	1MX4	3-STATE	10.16 mm	4	0.001 A	4194304 bit	-	COMMON	FAST PAGE DRAM	-	-	1024	-	-	FAST PAGE	-	NO	26.165 mm	2.96 mm
KM44C1000BZ-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM684000BLR-7L Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	3A991.B.2.A	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	GULL WING	-	1	1.27 mm	unknown	-	32	R-PDSO-G32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.08 mA	512KX8	3-STATE	1.2 mm	8	0.000015 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	YES	-	20.95 mm	10.16 mm
KM684000BLR-7L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S64323LH-FG60 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	5.4 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	-	2097152 words	2000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Active	-	No	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	R-PBGA-B90	Not Qualified	-	OTHER	-	-	-	0.12 mA	2MX32	3-STATE	-	32	0.0005 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S64323LH-FG60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1016V1C-TC20 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	20 ns	-	SAMSUNG SEMICONDUCTOR INC	-	65536 words	64000	70 °C	-	PLASTIC/EPOXY	TSOP2	0.400 INCH, TSOP2-44	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	3A991.B.2.B	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.8 mm	unknown	-	44	R-PDSO-G44	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.09 mA	64KX16	3-STATE	1.2 mm	16	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	-	18.41 mm	10.16 mm
K6R1016V1C-TC20 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: KM68512ALG-4,K6T4016U3C-RB10,K4M64163PH-RF75,KM6865BP-25,K4H560438J-LCB3.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)