Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page24

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Output Enable	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип K4T51043QE-ZCF7 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	0.4 ns	400 MHz	SAMSUNG SEMICONDUCTOR INC	3	134217728 words	128000000	95 °C	-	PLASTIC/EPOXY	FBGA	FBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	-	Yes	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	260	-	0.8 mm	compliant	-	-	R-PBGA-B60	Not Qualified	-	OTHER	-	-	-	0.215 mA	128MX4	3-STATE	-	4	0.008 A	536870912 bit	-	COMMON	DDR2 DRAM	-	-	8192	4,8	4,8	-	-	-	-	-
K4T51043QE-ZCF7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM61257ALJ-35 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX1, 35ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	35 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ24,.34	SOJ24,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	BATTERY BACKUP	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	-	24	R-PDSO-J24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.1 mA	256KX1	3-STATE	3.05 mm	1	0.00005 A	262144 bit	PARALLEL	SEPARATE	STANDARD SRAM	2 V	NO	-	-	-	-	-	-	15.875 mm	7.62 mm
KM61257ALJ-35 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V2104BK-L6 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ28,.34	SOJ28,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	28	R-PDSO-J28	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.1 mA	2MX8	3-STATE	3.76 mm	8	0.0003 A	16777216 bit	-	COMMON	EDO DRAM	-	-	2048	-	-	FAST PAGE WITH EDO	-	YES	18.42 mm	7.62 mm
KM48V2104BK-L6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M511633C-BF1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	7 ns	111 MHz	SAMSUNG SEMICONDUCTOR INC	-	33554432 words	32000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	-	-	-	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	-	-	0.8 mm	unknown	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.18 mA	32MX16	3-STATE	-	16	0.001 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M511633C-BF1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4F151611D-TL60 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44/50,.46,32	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	50	R-PDSO-G44	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.13 mA	1MX16	3-STATE	1.2 mm	16	0.0002 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	-	1024	-	-	FAST PAGE	-	YES	20.95 mm	10.16 mm
K4F151611D-TL60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM62256CLRGI-7 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.4 MM, REVERSE, TSOP1-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1-R	TSOP1-R, TSSOP28,.53,22	TSSOP28,.53,22	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.55 mm	unknown	-	28	R-PDSO-G28	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	1	ASYNCHRONOUS	0.07 mA	32KX8	3-STATE	1.2 mm	8	0.00005 A	262144 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	YES	-	11.8 mm	8 mm
KM62256CLRGI-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IM4G16D3FDBG-093 Anlielectronics Тип	Intelligent Memory Limited	DDR3L DRAM, 256MX16, CMOS, PBGA96, FBGA-96 Сборник данных Сравнение	Min.:1 Mult.:1	YES	96	-	1066 MHz	INTELLIGENT MEMORY LTD	-	268435456 words	256000000	95 °C	-	PLASTIC/EPOXY	TFBGA	FBGA-96	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	Yes	1.35 V	-	-	-	-	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.5V SUPPLY	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	1.45 V	-	1.283 V	1	SYNCHRONOUS	0.087 mA	256MX16	-	1.2 mm	16	0.042 A	4294967296 bit	-	COMMON	DDR3L DRAM	-	-	32768	4,8	4,8	MULTI BANK PAGE BURST	-	YES	13.5 mm	7.5 mm
IM4G16D3FDBG-093 Intelligent Memory Limited RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M563233G-HG60 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	5.4 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	1	8388608 words	8000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	-	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	unknown	-	-	R-PBGA-B90	Not Qualified	-	OTHER	-	-	-	0.18 mA	8MX32	-	-	32	0.001 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M563233G-HG60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM6865BP-25 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	25 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.11 mA	8KX8	3-STATE	5.08 mm	8	0.001 A	65536 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	-	-	34.29 mm	7.62 mm
KM6865BP-25 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1008C1D-KC10 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	10 ns	-	SAMSUNG SEMICONDUCTOR INC	3	131072 words	128000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	-	Yes	5 V	e1	Yes	3A991.B.2.B	Tin/Silver/Copper (Sn/Ag/Cu)	-	8542.32.00.41	DUAL	J BEND	260	1	1.27 mm	unknown	40	-	R-PDSO-J32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.065 mA	128KX8	3-STATE	3.76 mm	8	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	4.5 V	-	-	-	-	-	-	-	20.95 mm	10.16 mm
K6R1008C1D-KC10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68V2000LTGI-10L Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.5 mm	unknown	-	32	R-PDSO-G32	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.05 mA	256KX8	3-STATE	1.2 mm	8	0.000015 A	2097152 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	-	11.8 mm	8 mm
KM68V2000LTGI-10L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM681000BLP-8 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 128KX8, 85ns, CMOS, PDIP32, 0.600 INCH, DIP-32 Сборник данных Сравнение	Min.:1 Mult.:1	NO	32	85 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP32,.6	DIP32,.6	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	32	R-PDIP-T32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.07 mA	128KX8	3-STATE	5.08 mm	8	0.00005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	YES	-	-	-	-	-	-	41.91 mm	15.24 mm
KM681000BLP-8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H511638F-LCB3T Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.7 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	3	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	Yes	2.5 V	-	-	EAR99	-	-	8542.32.00.28	DUAL	GULL WING	260	-	0.635 mm	unknown	-	-	R-PDSO-G66	Not Qualified	-	COMMERCIAL	-	-	-	0.38 mA	32MX16	3-STATE	-	16	0.005 A	536870912 bit	-	COMMON	DDR1 DRAM	-	-	8192	2,4,8	2,4,8	-	-	-	-	-
K4H511638F-LCB3T Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4F660412E-TC60 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	32	R-PDSO-G32	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.07 mA	16MX4	3-STATE	1.2 mm	4	0.0005 A	67108864 bit	-	COMMON	FAST PAGE DRAM	-	-	8192	-	-	FAST PAGE	-	NO	20.95 mm	10.16 mm
K4F660412E-TC60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M393A8G40CB4-CWE Anlielectronics Тип	Samsung Electro-Mechanics	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
M393A8G40CB4-CWE Samsung Electro-Mechanics RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4F6E3S4HM-TFCL03V Anlielectronics Тип	Samsung Electronics Co. Ltd	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
K4F6E3S4HM-TFCL03V Samsung Electronics Co. Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M561633G-BF75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	1	16777216 words	16000000	70 °C	-25 °C	PLASTIC/EPOXY	VFBGA	VFBGA, BGA54,9X9,32	BGA54,9X9,32	RECTANGULAR	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Obsolete	-	Yes	3 V	e3	Yes	EAR99	MATTE TIN	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B54	Not Qualified	3.6 V	OTHER	2.7 V	1	SYNCHRONOUS	0.12 mA	16MX16	3-STATE	1 mm	16	0.001 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	11 mm	8 mm
K4M561633G-BF75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4T51043QC-ZLCC Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	0.6 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	3	134217728 words	128000000	95 °C	-	PLASTIC/EPOXY	FBGA	FBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	e1	Yes	EAR99	TIN SILVER COPPER	-	8542.32.00.28	BOTTOM	BALL	260	-	0.8 mm	compliant	-	-	R-PBGA-B60	Not Qualified	-	OTHER	-	-	-	0.18 mA	128MX4	3-STATE	-	4	0.0045 A	536870912 bit	-	COMMON	DDR2 DRAM	-	-	8192	4,8	4,8	-	-	-	-	-
K4T51043QC-ZLCC Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68U2000LTGI-10L Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	No	3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.5 mm	unknown	-	32	R-PDSO-G32	Not Qualified	3.3 V	INDUSTRIAL	2.7 V	-	ASYNCHRONOUS	0.04 mA	256KX8	3-STATE	1.2 mm	8	0.000015 A	2097152 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	-	11.8 mm	8 mm
KM68U2000LTGI-10L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C254DT-6 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	TIN LEAD	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	44	R-PDSO-G40	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.09 mA	256KX16	3-STATE	1.2 mm	16	0.001 A	4194304 bit	-	COMMON	EDO DRAM	-	-	512	-	-	FAST PAGE WITH EDO	-	NO	18.41 mm	10.16 mm
KM416C254DT-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4T51043QE-ZCF7,KM61257ALJ-35,KM48V2104BK-L6,K4M511633C-BF1L,K4F151611D-TL60.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Anlielectronics

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Mfr. Тип

Anlielectronics Тип

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Integrated Circuits (ICs)