Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page26

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип K4S641632E-TC70 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	143 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	54	R-PDSO-G54	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.14 mA	4MX16	3-STATE	1.2 mm	16	0.001 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4S641632E-TC70 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM732V596ALT-15 Anlielectronics Тип	Samsung Semiconductor	Cache SRAM, 32KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	7 ns	-	SAMSUNG SEMICONDUCTOR INC	-	32768 words	32000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	-	3A991.B.2.B	TIN LEAD	LINEAR OR INTERLEAVED BURST	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3.13 V	-	SYNCHRONOUS	0.18 mA	32KX32	3-STATE	1.6 mm	32	0.0005 A	1048576 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	-	-	-	-	-	-	20 mm	14 mm
KM732V596ALT-15 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K7S3236T4C-FC400 Anlielectronics Тип	Samsung Semiconductor	QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	0.45 ns	400 MHz	SAMSUNG SEMICONDUCTOR INC	3	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	LBGA	15 X 17 MM, 1 MM PITCH, FBGA-165	BGA165,11X15,40	RECTANGULAR	GRID ARRAY, LOW PROFILE	Obsolete	BGA	No	1.8 V	e0	-	3A991.B.2.A	TIN LEAD	PIPELINED ARCHITECTURE	8542.32.00.41	BOTTOM	BALL	240	1	1 mm	not_compliant	165	R-PBGA-B165	Not Qualified	1.9 V	COMMERCIAL	1.7 V	-	SYNCHRONOUS	0.95 mA	1MX36	3-STATE	1.4 mm	36	0.35 A	37748736 bit	PARALLEL	SEPARATE	QDR SRAM	1.7 V	-	-	-	-	-	-	17 mm	15 mm
K7S3236T4C-FC400 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68FV2000TI-7 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.8,20	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.5 mm	unknown	32	R-PDSO-G32	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.06 mA	256KX8	3-STATE	1.2 mm	8	0.002 A	2097152 bit	PARALLEL	COMMON	STANDARD SRAM	1.5 V	-	-	-	-	-	-	18.4 mm	8 mm
KM68FV2000TI-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44V1000BLTR-7 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, PLASTIC, REVERSE, TSOP2-26/20 Сборник данных Сравнение	Min.:1 Mult.:1	YES	20	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSSOP20/26,.36	TSSOP20/26,.36	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	20	R-PDSO-G20	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.06 mA	1MX4	3-STATE	1.2 mm	4	0.00005 A	4194304 bit	-	COMMON	FAST PAGE DRAM	-	1024	-	-	FAST PAGE	YES	NO	17.14 mm	7.62 mm
KM44V1000BLTR-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4T51043QC-ZLCC Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	0.6 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	3	134217728 words	128000000	95 °C	-	PLASTIC/EPOXY	FBGA	FBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	e1	Yes	EAR99	TIN SILVER COPPER	-	8542.32.00.28	BOTTOM	BALL	260	-	0.8 mm	compliant	-	R-PBGA-B60	Not Qualified	-	OTHER	-	-	-	0.18 mA	128MX4	3-STATE	-	4	0.0045 A	536870912 bit	-	COMMON	DDR2 DRAM	-	8192	4,8	4,8	-	-	-	-	-
K4T51043QC-ZLCC Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68U2000LTGI-10L Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	No	3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.5 mm	unknown	32	R-PDSO-G32	Not Qualified	3.3 V	INDUSTRIAL	2.7 V	-	ASYNCHRONOUS	0.04 mA	256KX8	3-STATE	1.2 mm	8	0.000015 A	2097152 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	11.8 mm	8 mm
KM68U2000LTGI-10L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S56323LF-FN60 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	5.4 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	-	8388608 words	8000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Active	-	No	2.5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	compliant	-	R-PBGA-B90	Not Qualified	-	OTHER	-	-	-	0.2 mA	8MX32	-	-	32	0.0005 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S56323LF-FN60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M51323PC-SF1L Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	7 ns	111 MHz	SAMSUNG SEMICONDUCTOR INC	1	16777216 words	16000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	No	1.8 V	-	No	EAR99	-	-	8542.32.00.28	BOTTOM	BALL	-	-	0.8 mm	compliant	-	R-PBGA-B90	Not Qualified	-	OTHER	-	-	-	0.15 mA	16MX32	3-STATE	-	32	0.0003 A	536870912 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M51323PC-SF1L Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM718V789AT-72 Anlielectronics Тип	Samsung Semiconductor	Cache SRAM, 128KX18, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	4 ns	138 MHz	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	LQFP	LQFP, QFP100,.63X.87	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	SELF-TIMED WRITE CYCLE	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3.135 V	-	SYNCHRONOUS	0.28 mA	128KX18	3-STATE	1.6 mm	18	0.02 A	2359296 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	-	-	-	-	-	-	20 mm	14 mm
KM718V789AT-72 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H511638B-TCA2 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.28	DUAL	GULL WING	-	1	0.65 mm	compliant	66	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	-	32MX16	3-STATE	1.2 mm	16	0.005 A	536870912 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H511638B-TCA2 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1016C1D-TI12 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	12 ns	-	SAMSUNG SEMICONDUCTOR INC	-	65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	3A991.B.2.B	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	GULL WING	-	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	-	ASYNCHRONOUS	0.065 mA	64KX16	3-STATE	1.2 mm	16	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	4.5 V	-	-	-	-	-	-	18.41 mm	10.16 mm
K6R1016C1D-TI12 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM68V4002BJI-10 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 Сборник данных Сравнение	Min.:1 Mult.:1	YES	36	10 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ, SOJ36,.44	SOJ36,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	36	R-PDSO-J36	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.17 mA	512KX8	3-STATE	3.76 mm	8	0.01 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	23.5 mm	10.16 mm
KM68V4002BJI-10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4H560438E-TCA2 Anlielectronics Тип	Samsung Semiconductor	Description: DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.75 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	67108864 words	64000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	2.5 V	e0	-	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.65 mm	compliant	66	R-PDSO-G66	Not Qualified	2.7 V	COMMERCIAL	2.3 V	1	SYNCHRONOUS	0.24 mA	64MX4	3-STATE	1.2 mm	4	0.003 A	268435456 bit	-	COMMON	DDR1 DRAM	-	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4H560438E-TCA2 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V4104AS-5 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Сборник данных Сравнение	Min.:1 Mult.:1	YES	50	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP50,.46,32	TSOP50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	50	R-PDSO-G50	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.15 mA	4MX16	3-STATE	1.2 mm	16	0.0005 A	67108864 bit	-	COMMON	EDO DRAM	-	4096	-	-	FAST PAGE WITH EDO	-	NO	20.95 mm	10.16 mm
KM416V4104AS-5 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S56163LF-XN75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	No	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	compliant	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.165 mA	16MX16	3-STATE	-	16	0.0005 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S56163LF-XN75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V1200AT-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44/50,.46,32	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.15 mA	1MX16	3-STATE	1.2 mm	16	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	1024	-	-	FAST PAGE	-	NO	18.41 mm	10.16 mm
KM416V1200AT-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM732V596AT-15 Anlielectronics Тип	Samsung Semiconductor	Cache SRAM, 32KX32, 7ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 Сборник данных Сравнение	Min.:1 Mult.:1	YES	100	7 ns	-	SAMSUNG SEMICONDUCTOR INC	-	32768 words	32000	70 °C	-	PLASTIC/EPOXY	LQFP	20 X 14 MM, TQFP-100	QFP100,.63X.87	RECTANGULAR	FLATPACK, LOW PROFILE	Obsolete	QFP	No	3.3 V	e0	-	3A991.B.2.B	TIN LEAD	LINEAR OR INTERLEAVED BURST	8542.32.00.41	QUAD	GULL WING	-	1	0.65 mm	unknown	100	R-PQFP-G100	Not Qualified	3.6 V	COMMERCIAL	3.13 V	-	SYNCHRONOUS	0.18 mA	32KX32	3-STATE	1.6 mm	32	0.005 A	1048576 bit	PARALLEL	COMMON	CACHE SRAM	3.14 V	-	-	-	-	-	-	20 mm	14 mm
KM732V596AT-15 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C1004CJ-7 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 1MX4, 70ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ20/26,.34	SOJ20/26,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	24	R-PDSO-J24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.065 mA	1MX4	3-STATE	3.76 mm	4	0.001 A	4194304 bit	-	COMMON	EDO DRAM	-	1024	-	-	FAST PAGE WITH EDO	-	NO	15.88 mm	7.62 mm
KM44C1004CJ-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM23C4000D Anlielectronics Тип	Samsung Semiconductor	MASK ROM, 512KX8, 80ns, CMOS, PDIP32, 0.600 INCH, DIP-32 Сборник данных Сравнение	Min.:1 Mult.:1	NO	32	80 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	DIP	DIP,	-	RECTANGULAR	IN-LINE	Obsolete	DIP	-	5 V	-	-	EAR99	-	-	8542.32.00.71	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	32	R-PDIP-T32	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.05 mA	512KX8	-	5.08 mm	8	-	4194304 bit	PARALLEL	-	MASK ROM	-	-	-	-	-	-	-	41.91 mm	15.24 mm
KM23C4000D Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4S641632E-TC70,KM732V596ALT-15,K7S3236T4C-FC400,KM68FV2000TI-7,KM44V1000BLTR-7.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)