Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page46

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип K4S643233H-FE75 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90 Сборник данных Сравнение	Min.:1 Mult.:1	YES	90	6 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	2097152 words	2000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	No	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	unknown	-	R-PBGA-B90	Not Qualified	-	-	OTHER	-	-	-	0.135 mA	2MX32	3-STATE	-	32	0.0005 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S643233H-FE75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1016V1D-UI08 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 64KX16, 8ns, CMOS, PDSO44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	8 ns	-	SAMSUNG SEMICONDUCTOR INC	3	65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP	TSOP, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	3.3 V	e1	Yes	3A991.B.2.B	TIN SILVER COPPER	-	8542.32.00.41	DUAL	GULL WING	260	-	0.8 mm	unknown	-	R-PDSO-G44	Not Qualified	-	-	INDUSTRIAL	-	-	ASYNCHRONOUS	0.09 mA	64KX16	3-STATE	-	16	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	-	-
K6R1016V1D-UI08 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6T4008U1C-MB10 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	100 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	1.27 mm	compliant	32	R-PDSO-G32	Not Qualified	3.3 V	-	COMMERCIAL	2.7 V	-	ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	1.2 mm	8	-	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	YES	-	20.95 mm	10.16 mm
K6T4008U1C-MB10 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M56163PG-BF75 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	1	16777216 words	16000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.24	BOTTOM	BALL	-	-	0.8 mm	compliant	-	S-PBGA-B54	Not Qualified	-	-	OTHER	-	-	-	0.075 mA	16MX16	3-STATE	-	16	0.00001 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M56163PG-BF75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4B1G0446E-HCF8 Anlielectronics Тип	Samsung Semiconductor	DDR DRAM, 256MX4, 0.15ns, CMOS, PBGA78, Сборник данных Сравнение	Min.:1 Mult.:1	YES	78	0.15 ns	533 MHz	SAMSUNG SEMICONDUCTOR INC	3	268435456 words	256000000	-	-	PLASTIC/EPOXY	FBGA	-	BGA78,9X13,32	RECTANGULAR	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.5 V	e1	Yes	EAR99	TIN SILVER COPPER	-	8542.32.00.32	BOTTOM	BALL	260	-	0.8 mm	unknown	-	R-PBGA-B78	Not Qualified	-	-	-	-	-	-	0.18 mA	256MX4	3-STATE	-	4	-	1073741824 bit	-	COMMON	DDR3 DRAM	-	8192	4,8	4,8	-	-	-	-	-
K4B1G0446E-HCF8 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V1000BT-L6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44/50,.46,32	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	50	R-PDSO-G44	Not Qualified	3.6 V	-	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.1 mA	1MX16	3-STATE	1.2 mm	16	0.0002 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	4096	-	-	FAST PAGE	-	YES	20.95 mm	10.16 mm
KM416V1000BT-L6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S561632J-UI60 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5 ns	166 MHz	SAMSUNG SEMICONDUCTOR INC	1	16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	3.3 V	e3	Yes	EAR99	MATTE TIN	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.8 mm	unknown	-	R-PDSO-G54	Not Qualified	3.6 V	-	INDUSTRIAL	3 V	1	SYNCHRONOUS	0.2 mA	16MX16	3-STATE	1.2 mm	16	0.002 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4S561632J-UI60 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S560832A-TC75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	No	EAR99	TIN LEAD	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.8 mm	unknown	54	R-PDSO-G54	Not Qualified	3.6 V	-	COMMERCIAL	3 V	1	SYNCHRONOUS	0.21 mA	32MX8	3-STATE	1.2 mm	8	0.002 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4S560832A-TC75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C256DT-L6 Anlielectronics Тип	Samsung Semiconductor	256KX16 FAST PAGE DRAM, 60ns, PDSO40, 0.400 INCH, TSOP2-44/40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	-	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	-	DUAL	GULL WING	-	1	0.8 mm	unknown	44	R-PDSO-G40	Not Qualified	5.5 V	5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.09 mA	256KX16	3-STATE	1.2 mm	16	0.00015 A	4194304 bit	-	COMMON	FAST PAGE DRAM	-	512	-	-	FAST PAGE	-	YES	18.41 mm	10.16 mm
KM416C256DT-L6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M64163PK-BC90 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	7 ns	111 MHz	SAMSUNG SEMICONDUCTOR INC	1	4194304 words	4000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	1.8 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	compliant	-	S-PBGA-B54	Not Qualified	-	-	OTHER	-	-	-	0.05 mA	4MX16	3-STATE	-	16	0.0003 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M64163PK-BC90 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C1204AJ-7 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 Сборник данных Сравнение	Min.:1 Mult.:1	YES	42	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ42,.44	SOJ42,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	42	R-PDSO-J42	Not Qualified	5.5 V	-	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.15 mA	1MX16	3-STATE	3.76 mm	16	0.001 A	16777216 bit	-	COMMON	EDO DRAM	-	1024	-	-	FAST PAGE WITH EDO	-	NO	27.31 mm	10.16 mm
KM416C1204AJ-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S641632N-LC50 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	4.5 ns	200 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP	TSOP, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	3.3 V	-	-	EAR99	-	-	8542.32.00.02	DUAL	GULL WING	-	-	0.8 mm	unknown	-	R-PDSO-G54	Not Qualified	-	-	COMMERCIAL	-	-	-	0.13 mA	4MX16	3-STATE	-	16	0.002 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S641632N-LC50 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S561632C-TE1H Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	-	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	85 °C	-25 °C	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.8 mm	unknown	54	R-PDSO-G54	Not Qualified	3.6 V	-	OTHER	3 V	1	SYNCHRONOUS	-	16MX16	-	1.2 mm	16	-	268435456 bit	-	-	SYNCHRONOUS DRAM	-	-	-	-	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
K4S561632C-TE1H Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4T1G084QE-HCLE6 Anlielectronics Тип	Samsung Semiconductor	Description: DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	0.45 ns	-	SAMSUNG SEMICONDUCTOR INC	-	134217728 words	128000000	95 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	-	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.32	BOTTOM	BALL	-	1	0.8 mm	unknown	60	R-PBGA-B60	Not Qualified	1.9 V	-	OTHER	1.7 V	1	SYNCHRONOUS	-	128MX8	-	1.2 mm	8	-	1073741824 bit	-	-	DDR DRAM	-	-	-	-	MULTI BANK PAGE BURST	-	YES	9.5 mm	7.5 mm
K4T1G084QE-HCLE6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C4100ALS-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP24/26,.36	TSOP24/26,.36	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	26	R-PDSO-G24	Not Qualified	5.5 V	-	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.1 mA	4MX4	3-STATE	1.2 mm	4	0.0003 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	2048	-	-	FAST PAGE	-	NO	17.14 mm	7.62 mm
KM44C4100ALS-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C1000CJ-6 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ20/26,.34	SOJ20/26,.34	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	24	R-PDSO-J24	Not Qualified	5.5 V	-	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.075 mA	1MX4	3-STATE	3.76 mm	4	0.001 A	4194304 bit	-	COMMON	FAST PAGE DRAM	-	1024	-	-	FAST PAGE	-	NO	15.88 mm	7.62 mm
KM44C1000CJ-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM616FV2000T-7 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 128KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	3.6 V	-	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.08 mA	128KX16	3-STATE	1.2 mm	16	0.00001 A	2097152 bit	PARALLEL	COMMON	STANDARD SRAM	1.5 V	-	-	-	-	-	-	18.41 mm	10.16 mm
KM616FV2000T-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416V1004BJ-6 Anlielectronics Тип	Samsung Semiconductor	EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Сборник данных Сравнение	Min.:1 Mult.:1	YES	42	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ42,.44	SOJ42,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	42	R-PDSO-J42	Not Qualified	3.6 V	-	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.11 mA	1MX16	3-STATE	3.76 mm	16	0.001 A	16777216 bit	-	COMMON	EDO DRAM	-	4096	-	-	FAST PAGE WITH EDO	-	NO	27.31 mm	10.16 mm
KM416V1004BJ-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S560832J-UC75T Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	1	33554432 words	32000000	70 °C	-	PLASTIC/EPOXY	TSOP	TSOP, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	Yes	3.3 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.24	DUAL	GULL WING	-	-	0.8 mm	unknown	-	R-PDSO-G54	Not Qualified	-	-	COMMERCIAL	-	-	-	0.11 mA	32MX8	3-STATE	-	8	0.002 A	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	8192	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S560832J-UC75T Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C254BLJ-5 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ40,.44	SOJ40,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	5 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	40	R-PDSO-J40	Not Qualified	5.25 V	-	COMMERCIAL	4.75 V	1	ASYNCHRONOUS	0.11 mA	256KX16	3-STATE	3.76 mm	16	0.0002 A	4194304 bit	-	COMMON	EDO DRAM	-	512	-	-	FAST PAGE WITH EDO	-	NO	26.04 mm	10.16 mm
KM416C254BLJ-5 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4S643233H-FE75,K6R1016V1D-UI08,K6T4008U1C-MB10,K4M56163PG-BF75,K4B1G0446E-HCF8.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)