Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page48

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Standby Voltage-Min	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип KM68V1002CJ-12 Anlielectronics Тип	Samsung Semiconductor	Description: Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	12 ns	-	SAMSUNG SEMICONDUCTOR INC	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	-	3A991.B.2.B	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	-	32	R-PDSO-J32	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.075 mA	128KX8	3-STATE	3.76 mm	8	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	20.96 mm	10.16 mm
KM68V1002CJ-12 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IM2G16D2DBBG-25 Anlielectronics Тип	Intelligent Memory Limited	DDR DRAM, 128MX16, CMOS, PBGA84, GREEN, FPBGA-84 Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	-	-	I''M INTELLIGENT MEMORY LTD	-	134217728 words	128000000	85 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	Yes	1.8 V	-	-	EAR99	-	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	R-PBGA-B84	-	1.9 V	OTHER	1.7 V	1	SYNCHRONOUS	-	128MX16	-	1.2 mm	16	-	2147483648 bit	-	-	DDR DRAM	-	-	-	-	MULTI BANK PAGE BURST	-	YES	12.5 mm	10.5 mm
IM2G16D2DBBG-25 Intelligent Memory Limited RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4S641633H-BL75 Anlielectronics Тип	Samsung Semiconductor	Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	-	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	Yes	-	-	-	EAR99	-	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	compliant	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.135 mA	4MX16	3-STATE	-	16	0.0005 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4S641633H-BL75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V8004CS-5 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP32,.46	TSOP32,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	32	R-PDSO-G32	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.11 mA	8MX8	3-STATE	1.2 mm	8	0.0005 A	67108864 bit	-	COMMON	EDO DRAM	-	8192	-	-	FAST PAGE WITH EDO	-	NO	20.95 mm	10.16 mm
KM48V8004CS-5 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C1200BT-L6 Anlielectronics Тип	Samsung Semiconductor	Description: Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44/50,.46,32	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	50	R-PDSO-G44	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.15 mA	1MX16	3-STATE	1.2 mm	16	0.0002 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	1024	-	-	FAST PAGE	-	YES	20.95 mm	10.16 mm
KM416C1200BT-L6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM48V8100AK-6 Anlielectronics Тип	Samsung Semiconductor	Description: Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	60 ns	-	SAMSUNG SEMICONDUCTOR INC	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ32,.44	SOJ32,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	No	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	unknown	-	32	R-PDSO-J32	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	0.14 mA	8MX8	3-STATE	3.76 mm	8	0.0005 A	67108864 bit	-	COMMON	FAST PAGE DRAM	-	4096	-	-	FAST PAGE	-	NO	20.96 mm	10.16 mm
KM48V8100AK-6 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R1016V1D-KI08 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 64KX16, 8ns, CMOS, PDSO44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	8 ns	-	SAMSUNG SEMICONDUCTOR INC	3	65536 words	64000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ, SOJ44,.44	SOJ44,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	-	Yes	3.3 V	e1	Yes	3A991.B.2.B	TIN SILVER COPPER	-	8542.32.00.41	DUAL	J BEND	260	-	1.27 mm	unknown	-	-	R-PDSO-J44	Not Qualified	-	INDUSTRIAL	-	-	ASYNCHRONOUS	0.09 mA	64KX16	3-STATE	-	16	0.005 A	1048576 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	-	-
K6R1016V1D-KI08 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M28163LH-BN75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	1	8388608 words	8000000	85 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	2.5 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	unknown	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.13 mA	8MX16	3-STATE	-	16	0.0005 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M28163LH-BN75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K7K3236U2C-FC40 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165 Сборник данных Сравнение	Min.:1 Mult.:1	YES	165	0.45 ns	400 MHz	SAMSUNG SEMICONDUCTOR INC	3	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	BGA	BGA, BGA165,11X15,40	BGA165,11X15,40	RECTANGULAR	GRID ARRAY	Obsolete	-	No	-	e1	No	3A991.B.2.A	TIN SILVER COPPER	-	8542.32.00.41	BOTTOM	BALL	240	-	1 mm	unknown	-	-	R-PBGA-B165	Not Qualified	-	COMMERCIAL	-	-	SYNCHRONOUS	0.9 mA	1MX36	3-STATE	-	36	0.35 A	37748736 bit	PARALLEL	COMMON	STANDARD SRAM	1.7 V	-	-	-	-	-	-	-	-
K7K3236U2C-FC40 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K4M281633H-BL75 Anlielectronics Тип	Samsung Semiconductor	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	133 MHz	SAMSUNG SEMICONDUCTOR INC	1	8388608 words	8000000	70 °C	-25 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Obsolete	-	Yes	-	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.02	BOTTOM	BALL	-	-	0.8 mm	unknown	-	-	S-PBGA-B54	Not Qualified	-	OTHER	-	-	-	0.07 mA	8MX16	3-STATE	-	16	0.0005 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	-	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-	-
K4M281633H-BL75 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6R4016V1C-JI12 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	12 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ, SOJ44,.44	SOJ44,.44	RECTANGULAR	SMALL OUTLINE	Obsolete	SOJ	No	3.3 V	e0	No	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	unknown	-	44	R-PDSO-J44	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.165 mA	256KX16	3-STATE	3.76 mm	16	0.0007 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	28.58 mm	10.16 mm
K6R4016V1C-JI12 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM616V4002BTI-12 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	12 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3.3 V	e0	No	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.8 mm	unknown	-	44	R-PDSO-G44	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.23 mA	256KX16	3-STATE	1.2 mm	16	0.01 A	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	3 V	-	-	-	-	-	-	18.41 mm	10.16 mm
KM616V4002BTI-12 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6T4016U3C-RF85 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	85 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2-R	TSOP2-R, TSOP44,.46,32	TSOP44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	3 V	-	No	3A991.B.2.A	-	-	8542.32.00.41	DUAL	GULL WING	240	1	0.8 mm	compliant	30	44	R-PDSO-G44	Not Qualified	3.3 V	INDUSTRIAL	2.7 V	-	ASYNCHRONOUS	0.045 mA	256KX16	3-STATE	1.2 mm	16	-	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	YES	-	18.41 mm	10.16 mm
K6T4016U3C-RF85 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M372F1680DJ0-C50 Anlielectronics Тип	Samsung Semiconductor	Description: EDO DRAM Module, 16MX72, 50ns, CMOS, DIMM-168 Сборник данных Сравнение	Min.:1 Mult.:1	NO	168	50 ns	-	SAMSUNG SEMICONDUCTOR INC	-	16777216 words	16000000	70 °C	-	UNSPECIFIED	DIMM	DIMM, DIMM168	DIMM168	RECTANGULAR	MICROELECTRONIC ASSEMBLY	Obsolete	DIMM	-	3.3 V	-	-	EAR99	-	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.36	DUAL	NO LEAD	-	1	1.27 mm	unknown	-	168	R-XDMA-N168	Not Qualified	3.6 V	COMMERCIAL	3 V	1	ASYNCHRONOUS	1.98 mA	16MX72	3-STATE	31.75 mm	72	0.03 A	1207959552 bit	-	COMMON	EDO DRAM MODULE	-	8192	-	-	FAST PAGE WITH EDO	-	-	-	-
M372F1680DJ0-C50 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C4100AT-7 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, TSOP2-28/24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP24/28,.46	TSOP24/28,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	28/24	R-PDSO-G24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.09 mA	4MX4	3-STATE	1.2 mm	4	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	-	2048	-	-	FAST PAGE	-	NO	18.41 mm	10.16 mm
KM44C4100AT-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип K6T4008U1C-YB85 Anlielectronics Тип	Samsung Semiconductor	Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	85 ns	-	SAMSUNG SEMICONDUCTOR INC	-	524288 words	512000	70 °C	-	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.56,20	TSSOP32,.56,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP1	No	3 V	e0	-	3A991.B.2.A	TIN LEAD	-	8542.32.00.41	DUAL	GULL WING	-	1	0.5 mm	compliant	-	32	R-PDSO-G32	Not Qualified	3.3 V	COMMERCIAL	2.7 V	-	ASYNCHRONOUS	0.03 mA	512KX8	3-STATE	1.2 mm	8	-	4194304 bit	PARALLEL	COMMON	STANDARD SRAM	2 V	-	-	-	-	-	-	11.8 mm	8 mm
K6T4008U1C-YB85 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM416C256BT-7 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP40/44,.46,32	TSOP40/44,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	44	R-PDSO-G40	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.08 mA	256KX16	3-STATE	1.2 mm	16	0.001 A	4194304 bit	-	COMMON	FAST PAGE DRAM	-	512	-	-	FAST PAGE	-	NO	18.41 mm	10.16 mm
KM416C256BT-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип KM44C256DZ-7 Anlielectronics Тип	Samsung Semiconductor	Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP19, 0.400 INCH, ZIP-20/19 Сборник данных Сравнение	Min.:1 Mult.:1	NO	19	70 ns	-	SAMSUNG SEMICONDUCTOR INC	-	262144 words	256000	70 °C	-	PLASTIC/EPOXY	ZIP	ZIP, ZIP20,.1	ZIP20,.1	RECTANGULAR	IN-LINE	Obsolete	ZIP	No	5 V	e0	-	EAR99	TIN LEAD	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	ZIG-ZAG	THROUGH-HOLE	-	1	1.27 mm	unknown	-	20	R-PZIP-T19	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.055 mA	256KX4	3-STATE	10.16 mm	4	0.001 A	1048576 bit	-	COMMON	FAST PAGE DRAM	-	512	-	-	FAST PAGE	-	-	26.165 mm	2.96 mm
KM44C256DZ-7 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M393AAG40M3B-CYF Anlielectronics Тип	Samsung Semiconductor	Description: DDR DRAM Module, Сборник данных Сравнение	Min.:1 Mult.:1	NO	288	-	-	SAMSUNG SEMICONDUCTOR INC	-	17179869184 words	16000000000	-	-	UNSPECIFIED	DIMM	DIMM-288	-	RECTANGULAR	MICROELECTRONIC ASSEMBLY	End Of Life	-	-	1.2 V	-	-	EAR99	-	AUTO/SELF REFRESH; WD-MAX	8542.32.00.36	DUAL	NO LEAD	-	1	0.85 mm	compliant	-	-	R-XDMA-N288	-	1.26 V	-	1.14 V	1	SYNCHRONOUS	-	16GX72	-	31.4 mm	72	-	1236950581248 bit	-	-	DDR DRAM MODULE	-	-	-	-	FOUR BANK PAGE BURST	-	YES	133.35 mm	4.3 mm
M393AAG40M3B-CYF Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип S524A60X51-DCB0 Anlielectronics Тип	Samsung Semiconductor	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S524A60X51-DCB0 Samsung Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: KM68V1002CJ-12,IM2G16D2DBBG-25,K4S641633H-BL75,KM48V8004CS-5,KM416C1200BT-L6.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

Индекс :

0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Локаль

Язык

Валюта

Здравствуйте, добро пожаловать в ANLI

Anlielectronics

Локаль

Язык

Валюта

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Mfr. Тип

Anlielectronics Тип

Integrated Circuits (ICs)