Memory Products For Sale - PDF - Integrated Circuits (ICs)

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Weight	Number of Terminals	Access Time-Max	Analog	Capacitors series	Case - inch	Case - mm	Cleaning method	Clock Frequency-Max (fCLK)	Gross weight	Ihs Manufacturer	Kind of capacitor	Melting temperature	Mounting	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Soldering temperature	Supply Voltage-Nom (Vsup)	Transport packaging size/quantity	Type of capacitor	Operating temperature	Packaging	Tolerance	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Capacitance	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Dielectric	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Design	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Operating voltage	Self Refresh	Diameter	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Weight	Number of Terminals	Access Time-Max	Analog	Capacitors series	Case - inch	Case - mm	Cleaning method	Clock Frequency-Max (fCLK)	Gross weight	Ihs Manufacturer	Kind of capacitor	Melting temperature	Mounting	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Soldering temperature	Supply Voltage-Nom (Vsup)	Transport packaging size/quantity	Type of capacitor	Operating temperature	Packaging	Tolerance	JESD-609 Code	Pbfree Code	ECCN Code	Type	Terminal Finish	Additional Feature	HTS Code	Capacitance	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Dielectric	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Design	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Operating voltage	Self Refresh	Diameter	Length	Width
	Mfr. Тип HXI15H4G160AF-13K Anlielectronics Тип	Xi'an UniIC Semiconductors Co Ltd	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	0.1 kg	96	-	POS40	KAF	0805	2012	Cleaning with alcohol-based solution	-	110.00	XIAN UNILC SEMICONDUCTORS CO LTD	MLCC	183...240 °C	SMD	268435456 words	256000000	95 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	285...330 °C	1.5 V	422818.5/100	ceramic	-55...125°C	coil	±10%	-	-	EAR99	Soft lead-tin solder Sn/Pb with flux	-	AUTO/SELF REFRESH	8542.32.00.36	1µF	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	X7R	1.575 V	INDUSTRIAL	1.425 V	1	SYNCHRONOUS	-	256MX16	-	1.2 mm	16	-	4294967296 bit	-	tube	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	MULTI BANK PAGE BURST	10V	YES	0.3 mm	13.5 mm	9 mm
HXI15H4G160AF-13K Xi'an UniIC Semiconductors Co Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L64164A-7T Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	54	6 ns	-	-	-	-	-	143 MHz	-	ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC	-	-	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP	-	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	-	No	-	3.3 V	-	-	-	-	-	-	-	EAR99	-	-	-	8542.32.00.02	-	DUAL	GULL WING	-	-	0.8 mm	unknown	-	-	R-PDSO-G54	Not Qualified	-	-	COMMERCIAL	-	-	-	0.18 mA	4MX16	3-STATE	-	16	0.001 A	67108864 bit	-	-	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	4096	-	1,2,4,8,FP	1,2,4,8	-	-	-	-	-	-
M12L64164A-7T Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L64322A-6TG2S Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Synchronous DRAM, 2MX32, CMOS, PDSO86, TSOPII-86 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	86	-	-	-	-	-	-	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	-	-	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	-	-	-	3.3 V	-	-	-	-	-	-	-	EAR99	-	-	AUTO/SELF REFRESH	8542.32.00.02	-	DUAL	GULL WING	NOT SPECIFIED	1	0.5 mm	unknown	NOT SPECIFIED	-	R-PDSO-G86	-	-	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	-	2MX32	-	1.2 mm	32	-	67108864 bit	-	-	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	-	YES	-	22.22 mm	10.16 mm
M12L64322A-6TG2S Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC16WI-TE13 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 2KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	8	-	-	-	-	-	-	0.1 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	2048 words	2000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	-	3 V	-	-	-	-	-	e3	Yes	EAR99	-	MATTE TIN	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	8542.32.00.51	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	-	6 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	2KX8	-	1.75 mm	8	0.000001 A	16384 bit	AEC-Q100	-	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	10 ms	100	HARDWARE	-	-	-	1010MMMR	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT24WC16WI-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M15F1G1664A-ADBG2R Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: DDR DRAM, 64MX16, CMOS, PBGA96, 0.80 MM PITCH, LEAD FREE, BGA-96 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	96	-	-	-	-	-	-	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	-	-	67108864 words	64000000	85 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	-	1.5 V	-	-	-	-	-	-	-	EAR99	-	-	AUTO/SELF REFRESH	8542.32.00.32	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	-	1.575 V	OTHER	1.425 V	1	SYNCHRONOUS	-	64MX16	-	1.2 mm	16	-	1073741824 bit	-	-	-	-	DDR3 DRAM	-	-	-	-	-	-	-	-	-	-	-	MULTI BANK PAGE BURST	-	YES	-	13 mm	9 mm
M15F1G1664A-ADBG2R Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SCB33S128160AE-6BI Anlielectronics Тип	Xi'an UniIC Semiconductors Co Ltd	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	54	5.4 ns	-	-	-	-	-	-	-	XIAN UNILC SEMICONDUCTORS CO LTD	-	-	-	8388608 words	8000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Contact Manufacturer	-	Yes	-	3.3 V	-	-	-	-	-	-	-	EAR99	-	-	AUTO/SELF REFRESH	8542.32.00.02	-	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	compliant	NOT SPECIFIED	-	R-PDSO-G54	-	-	3.6 V	INDUSTRIAL	3 V	1	SYNCHRONOUS	-	8MX16	-	1.2 mm	16	-	134217728 bit	-	-	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	-	YES	-	22.22 mm	10.16 mm
SCB33S128160AE-6BI Xi'an UniIC Semiconductors Co Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C188L-55CM Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 16KX4, 55ns, CMOS, CDIP22 Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	22	55 ns	-	-	-	-	-	-	-	PERFORMANCE SEMICONDUCTOR CORP	-	-	-	16384 words	16000	125 °C	-55 °C	CERAMIC	DIP	DIP, DIP22,.3	DIP22,.3	RECTANGULAR	IN-LINE	Obsolete	-	No	-	5 V	-	-	-	-	-	e0	-	3A001.A.2.C	-	Tin/Lead (Sn/Pb)	-	8542.32.00.41	-	DUAL	THROUGH-HOLE	-	-	2.54 mm	unknown	-	-	R-XDIP-T22	Not Qualified	-	-	MILITARY	-	-	ASYNCHRONOUS	0.12 mA	16KX4	3-STATE	-	4	0.0006 A	65536 bit	-	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	-	-	-	-	-	-	-	-	-	-	-
P4C188L-55CM Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C16P Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 2KX8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	-	8	-	-	-	-	-	-	5 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	2048 words	2000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	-	5 V	-	-	-	-	-	e0	No	EAR99	-	TIN LEAD	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	8542.32.00.51	-	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	-	6 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.005 mA	2KX8	-	4.57 mm	8	0.000001 A	16384 bit	AEC-Q100	-	SERIAL	-	EEPROM	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	9.59 mm	7.62 mm
CAT25C16P Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L2561616A-6BIG2S Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, BGA-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	54	5.4 ns	-	-	-	-	-	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	-	-	16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	VFBGA	VFBGA,	-	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	-	3.3 V	-	-	-	-	-	-	-	EAR99	-	-	AUTO/SELF REFRESH	8542.32.00.24	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	S-PBGA-B54	-	-	3.6 V	INDUSTRIAL	3 V	1	SYNCHRONOUS	-	16MX16	-	1 mm	16	-	268435456 bit	-	-	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	-	YES	-	8 mm	8 mm
M12L2561616A-6BIG2S Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CXK5V8257BM-70LL Anlielectronics Тип	Sony Semiconductor	Description: Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	28	70 ns	-	-	-	-	-	-	-	SONY CORP	-	-	-	32768 words	32000	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP28,.5	SOP28,.5	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	-	-	3.3 V	-	-	-	-	-	-	-	EAR99	-	-	-	8542.32.00.41	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	28	R-PDSO-G28	Not Qualified	-	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.04 mA	32KX8	3-STATE	2.7 mm	8	0.000003 A	262144 bit	-	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	-	-	-	-	-	-	-	-	-	18 mm	8.4 mm
CXK5V8257BM-70LL Sony Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SRM2B256SLCX70 Anlielectronics Тип	Alpha & Omega Semiconductor	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SRM2B256SLCX70 Alpha & Omega Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CXK77P18E160GB-44E Anlielectronics Тип	Sony Semiconductor	Standard SRAM, 1MX18, 4.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	119	4.7 ns	-	-	-	-	-	227 MHz	-	SONY CORP	-	-	-	1048576 words	1000000	85 °C	-	PLASTIC/EPOXY	BGA	BGA, BGA119,7X17,50	BGA119,7X17,50	RECTANGULAR	GRID ARRAY	Obsolete	BGA	No	-	3.3 V	-	-	-	-	-	e0	No	3A991.B.2.A	-	TIN LEAD	-	8542.32.00.41	-	BOTTOM	BALL	-	1	1.27 mm	unknown	-	119	R-PBGA-B119	Not Qualified	-	3.47 V	OTHER	3.13 V	-	SYNCHRONOUS	0.75 mA	1MX18	3-STATE	2.5 mm	18	0.25 A	18874368 bit	-	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	3.14 V	-	-	-	-	-	-	-	-	-	22 mm	14 mm
CXK77P18E160GB-44E Sony Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C02YI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	CATALYST SEMICONDUCTOR INC	-	-	-	-	-	-	-	-	-	,	-	-	-	Transferred	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	8542.32.00.51	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CAT24C02YI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT64LC20S Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 128X16, Serial, CMOS, PDSO8, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	8	-	-	-	-	-	-	1 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	128 words	128	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	-	5 V	-	-	-	-	-	e0	-	EAR99	-	TIN LEAD	SPI BUS INTERFACE	8542.32.00.51	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	-	6 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	128X16	-	1.75 mm	16	0.000003 A	2048 bit	-	-	SERIAL	-	EEPROM	SPI	1000000 Write/Erase Cycles	10 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT64LC20S Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24FC01WI Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	8	-	-	-	-	-	-	0.1 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	128 words	128	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	-	3 V	-	-	-	-	-	e3	Yes	EAR99	-	MATTE TIN	-	8542.32.00.51	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	-	5.5 V	INDUSTRIAL	1.8 V	-	SYNCHRONOUS	0.003 mA	128X8	-	1.75 mm	8	0.000001 A	1024 bit	-	-	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	5 ms	100	HARDWARE	-	-	-	1010DDDR	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT24FC01WI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24FC64WI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 8KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	8	-	-	-	-	-	-	1 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	8192 words	8000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	-	3 V	-	-	-	-	-	e3	Yes	EAR99	-	MATTE TIN	-	8542.32.00.51	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	-	5.5 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	8KX8	-	1.75 mm	8	0.000001 A	65536 bit	-	-	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	5 ms	100	HARDWARE	-	-	-	1010DDDR	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT24FC64WI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C16VE Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 2KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	8	-	-	-	-	-	-	5 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	2048 words	2000	125 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	-	5 V	-	-	-	-	-	e3	Yes	EAR99	-	MATTE TIN	-	8542.32.00.51	-	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	-	6 V	AUTOMOTIVE	2.5 V	-	SYNCHRONOUS	0.005 mA	2KX8	-	1.75 mm	8	0.00001 A	16384 bit	AEC-Q100	-	SERIAL	-	EEPROM	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT25C16VE Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CXK581100TM-10LL Anlielectronics Тип	Sony Semiconductor	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, EIAJ, PLASTIC, TSOP-32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	32	100 ns	-	-	-	-	-	-	-	SONY CORP	-	-	-	131072 words	128000	70 °C	-	PLASTIC/EPOXY	TSOP1	TSOP1, TSSOP32,.8,20	TSSOP32,.8,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP	No	-	5 V	-	-	-	-	-	e0	No	EAR99	-	TIN LEAD	-	8542.32.00.41	-	DUAL	GULL WING	-	1	0.5 mm	unknown	-	32	R-PDSO-G32	Not Qualified	-	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.06 mA	128KX8	3-STATE	1.2 mm	8	-	1048576 bit	-	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	YES	-	-	-	-	-	-	-	-	18.4 mm	8 mm
CXK581100TM-10LL Sony Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C00TPE Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 16X8, Serial, CMOS, PDSO5, SOT-23, 5 PIN Сборник данных Сравнение	Min.:1 Mult.:1	YES	-	5	-	-	-	-	-	-	0.1 MHz	-	CATALYST SEMICONDUCTOR INC	-	-	-	16 words	16	125 °C	-40 °C	PLASTIC/EPOXY	LSSOP	LSSOP, TSOP5/6,.11,37	TSOP5/6,.11,37	RECTANGULAR	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	Obsolete	SOT-23	No	-	3 V	-	-	-	-	-	e0	-	EAR99	-	TIN LEAD	-	8542.32.00.51	-	DUAL	GULL WING	-	1	0.95 mm	unknown	-	5	R-PDSO-G5	Not Qualified	-	5.5 V	AUTOMOTIVE	1.8 V	-	SYNCHRONOUS	0.002 mA	16X8	-	1.45 mm	8	0.00001 A	128 bit	-	-	SERIAL	-	EEPROM	I2C	10000000 Write/Erase Cycles	5 ms	100	-	-	-	-	1010XXXR	-	-	-	-	-	-	2.92 mm	1.625 mm
CAT24C00TPE Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC02UT Anlielectronics Тип	Catalyst Semiconductor	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CAT24WC02UT Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: HXI15H4G160AF-13K,M12L64164A-7T,M12L64322A-6TG2S,CAT24WC16WI-TE13,M15F1G1664A-ADBG2R.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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