Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page2

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Data Polling	Toggle Bit	Command User Interface	Page Size	Ready/Busy	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Data Polling	Toggle Bit	Command User Interface	Page Size	Ready/Busy	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width
	Mfr. Тип CAT24C00YE Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 16X8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, TSSOP-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	16 words	16	125 °C	-40 °C	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP8,.25	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	SOIC	Yes	3 V	e3	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	0.65 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	AUTOMOTIVE	1.8 V	-	SYNCHRONOUS	0.002 mA	16X8	-	1.1 mm	8	0.00001 A	128 bit	-	SERIAL	-	EEPROM	-	I2C	10000000 Write/Erase Cycles	5 ms	100	-	-	-	-	-	-	-	-	1010XXXR	-	-	-	-	4.4 mm	3 mm
CAT24C00YE Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M14D5121632A-1.5BG2M Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	0.35 ns	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	33554432 words	32000000	95 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	Yes	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	R-PBGA-B84	-	1.9 V	OTHER	1.7 V	1	SYNCHRONOUS	-	32MX16	-	1.2 mm	16	-	536870912 bit	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	12.5 mm	8 mm
M14D5121632A-1.5BG2M Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SCB15H2G160AF-13KI Anlielectronics Тип	Xi'an UniIC Semiconductors Co Ltd	Description: DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	96	-	-	XIAN UNILC SEMICONDUCTORS CO LTD	134217728 words	128000000	95 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	1.5 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	1.575 V	INDUSTRIAL	1.425 V	1	SYNCHRONOUS	-	128MX16	-	1.2 mm	16	-	2147483648 bit	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	MULTI BANK PAGE BURST	YES	13 mm	9 mm
SCB15H2G160AF-13KI Xi'an UniIC Semiconductors Co Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C00TPI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 16X8, Serial, CMOS, PDSO5, SOT-23, 5 PIN Сборник данных Сравнение	Min.:1 Mult.:1	YES	5	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	16 words	16	85 °C	-40 °C	PLASTIC/EPOXY	LSSOP	LSSOP, TSOP5/6,.11,37	TSOP5/6,.11,37	RECTANGULAR	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	Obsolete	SOT-23	No	3 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	GULL WING	-	1	0.95 mm	unknown	-	5	R-PDSO-G5	Not Qualified	5.5 V	INDUSTRIAL	1.8 V	-	SYNCHRONOUS	0.002 mA	16X8	-	1.45 mm	8	0.000001 A	128 bit	-	SERIAL	-	EEPROM	-	I2C	10000000 Write/Erase Cycles	5 ms	100	-	-	-	-	-	-	-	-	1010XXXR	-	-	-	-	2.92 mm	1.625 mm
CAT24C00TPI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип UT89X Anlielectronics Тип	Uni-Tran Semiconductor Corp	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UT89X Uni-Tran Semiconductor Corp RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C188-20PC Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 16KX4, 20ns, CMOS, PDIP22, 0.300 INCH, PLASTIC, DIP-22 Сборник данных Сравнение	Min.:1 Mult.:1	NO	22	20 ns	-	PYRAMID SEMICONDUCTOR CORP	16384 words	16000	70 °C	-	PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-22	DIP22,.3	RECTANGULAR	IN-LINE	Active	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	22	R-PDIP-T22	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.155 mA	16KX4	3-STATE	5.334 mm	4	0.015 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	4.5 V	-	-	-	-	-	-	-	-	-	-	-	29.337 mm	7.62 mm
P4C188-20PC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C64PA Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 8KX8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	3 MHz	CATALYST SEMICONDUCTOR INC	8192 words	8000	105 °C	-40 °C	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	6 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.01 mA	8KX8	-	4.57 mm	8	0.00001 A	65536 bit	-	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	10 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	-	-	9.59 mm	7.62 mm
CAT25C64PA Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M14D128168A-1.8BG2Y Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	DDR DRAM, 8MX16, 0.35ns, CMOS, PBGA84, BGA-84 Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	0.35 ns	533 MHz	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	8388608 words	8000000	85 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B84	-	1.9 V	OTHER	1.7 V	1	SYNCHRONOUS	0.22 mA	8MX16	-	1.2 mm	16	0.012 A	134217728 bit	-	-	COMMON	DDR2 DRAM	-	-	-	-	-	-	-	-	-	-	-	-	4096	-	4,8	4,8	FOUR BANK PAGE BURST	YES	12.5 mm	8 mm
M14D128168A-1.8BG2Y Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC32JI-1.8 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	3 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	1.8 V	-	SYNCHRONOUS	0.003 mA	4KX8	-	1.75 mm	8	0.000001 A	32768 bit	AEC-Q100	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	10 ms	100	HARDWARE	-	-	-	-	-	-	-	1010DDDR	-	-	-	-	4.9 mm	3.9 mm
CAT24WC32JI-1.8 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C168-30CC Anlielectronics Тип	Pyramid Semiconductor Corporation	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
P4C168-30CC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT28LV65P-20 Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	200 ns	-	CATALYST SEMICONDUCTOR INC	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Transferred	DIP	No	3.3 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.008 mA	8KX8	-	5.08 mm	8	0.0001 A	65536 bit	-	PARALLEL	-	EEPROM	3 V	-	100000 Write/Erase Cycles	5 ms	-	-	-	YES	YES	NO	32 words	YES	-	-	-	-	-	-	36.695 mm	15.24 mm
CAT28LV65P-20 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L64322A-7TG Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 Сборник данных Сравнение	Min.:1 Mult.:1	YES	86	6 ns	143 MHz	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	2097152 words	2000000	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP86,.46,20	TSSOP86,.46,20	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Active	TSOP2	Yes	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.5 mm	unknown	-	86	R-PDSO-G86	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.285 mA	2MX32	3-STATE	1.2 mm	32	0.002 A	67108864 bit	-	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	-	2048	-	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
M12L64322A-7TG Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M11B416256A-25JP Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: EDO DRAM, 256KX16, 12ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, SOJ-40 Сборник данных Сравнение	Min.:1 Mult.:1	YES	40	12 ns	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	262144 words	256000	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOJ40,.44	SOJ40,.44	RECTANGULAR	SMALL OUTLINE	Contact Manufacturer	SOJ	Yes	5 V	-	-	EAR99	-	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	1.27 mm	unknown	-	40	R-PDSO-G40	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.21 mA	256KX16	3-STATE	3.76 mm	16	0.002 A	4194304 bit	-	-	COMMON	EDO DRAM	-	-	-	-	-	-	-	-	-	-	-	-	512	-	-	-	FAST PAGE WITH EDO	NO	26.04 mm	10.16 mm
M11B416256A-25JP Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25010V Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 128X8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	5 MHz	CATALYST SEMICONDUCTOR INC	128 words	128	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Transferred	SOIC	Yes	5 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	6 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.005 mA	128X8	-	1.75 mm	8	0.000001 A	1024 bit	-	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT25010V Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC32X Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, EIAJ, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	4096 words	4000	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP8,.3	SOP8,.3	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	3 V	e3	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	4KX8	-	2.03 mm	8	0.000001 A	32768 bit	AEC-Q100	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	10 ms	100	HARDWARE	-	-	-	-	-	-	-	1010DDDR	-	-	-	-	5.3 mm	5.25 mm
CAT24WC32X Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC32WI-1.8TE13 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	Yes	3 V	e3	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	1.8 V	-	SYNCHRONOUS	0.003 mA	4KX8	-	1.75 mm	8	0.000001 A	32768 bit	AEC-Q100	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	10 ms	100	HARDWARE	-	-	-	-	-	-	-	1010DDDR	-	-	-	-	4.9 mm	3.9 mm
CAT24WC32WI-1.8TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C208WI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 1KX8, Serial, CMOS, PDSO8, 0.150 INCH, GREEN, MS-012, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.4 MHz	CATALYST SEMICONDUCTOR INC	1024 words	1000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP,	-	RECTANGULAR	SMALL OUTLINE	Transferred	SOIC	Yes	5 V	e3	Yes	EAR99	Matte Tin (Sn)	-	8542.32.00.51	DUAL	GULL WING	260	1	1.27 mm	unknown	40	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	3 V	-	SYNCHRONOUS	-	1KX8	-	1.75 mm	8	-	8192 bit	-	SERIAL	-	EEPROM	-	I2C	-	5 ms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT24C208WI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C149-10DC Anlielectronics Тип	Pyramid Semiconductor Corporation	Standard SRAM, 1KX4, 12ns, CMOS, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18 Сборник данных Сравнение	Min.:1 Mult.:1	NO	18	12 ns	-	PYRAMID SEMICONDUCTOR CORP	1024 words	1000	70 °C	-	CERAMIC, GLASS-SEALED	DIP	0.300 INCH, HERMETIC SEALED, CERDIP-18	-	RECTANGULAR	IN-LINE	Active	DIP	No	5 V	e0	No	EAR99	TIN LEAD	LOW POWER STANDBY MODE	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	18	R-GDIP-T18	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	-	1KX4	-	5.08 mm	4	-	4096 bit	-	PARALLEL	-	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	23.114 mm	7.62 mm
P4C149-10DC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT34WC02Y-TE13 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 256X8, Serial, CMOS, PDSO8, LEAD AND HALOGEN FREE, TSSOP-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.4 MHz	CATALYST SEMICONDUCTOR INC	256 words	256	85 °C	-40 °C	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP8,.25	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	SOIC	Yes	3 V	e3	Yes	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	0.65 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	1.7 V	-	SYNCHRONOUS	0.003 mA	256X8	-	1.2 mm	8	9e-7 A	2048 bit	-	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	10 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	1010DDDR	-	-	-	-	4.4 mm	3 mm
CAT34WC02Y-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L64164A-5BIG2C Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: Synchronous DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5 ns	-	ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC	4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	VFBGA	VBGA-54	-	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Contact Manufacturer	-	Yes	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	S-PBGA-B54	-	3.6 V	INDUSTRIAL	3 V	1	SYNCHRONOUS	-	4MX16	-	1 mm	16	-	67108864 bit	-	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	8 mm	8 mm
M12L64164A-5BIG2C Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: CAT24C00YE,M14D5121632A-1.5BG2M,SCB15H2G160AF-13KI,CAT24C00TPI,UT89X.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)