Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page4

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Base Product Number	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Mfr	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Programmable	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	Series	JESD-609 Code	Pbfree Code	Part Status	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Data Polling	Toggle Bit	Command User Interface	Output Enable	Page Size	I2C Control Byte	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Base Product Number	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Mfr	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Programmable	Rohs Code	Supply Voltage-Nom (Vsup)	Packaging	Series	JESD-609 Code	Pbfree Code	Part Status	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Screening Level	Parallel/Serial	I/O Type	Memory IC Type	Programming Voltage	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Data Polling	Toggle Bit	Command User Interface	Output Enable	Page Size	I2C Control Byte	Access Mode	Self Refresh	Length	Width
	Mfr. Тип P4C188-15JC Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 16KX4, 15ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24 Сборник данных Сравнение	Min.:1 Mult.:1	YES	24	15 ns	-	-	PYRAMID SEMICONDUCTOR CORP	-	-	16384 words	16000	70 °C	-	PLASTIC/EPOXY	SOJ	0.300 INCH, PLASTIC, SOJ-24	SOJ24,.34	RECTANGULAR	SMALL OUTLINE	Active	SOJ	-	No	5 V	-	-	e0	No	-	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	compliant	-	24	R-PDSO-J24	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.16 mA	16KX4	3-STATE	3.7592 mm	4	0.015 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	4.5 V	-	-	-	-	-	-	-	-	15.875 mm	7.5184 mm
P4C188-15JC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M53D2561616A-5BG2F Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: DDR DRAM, 16MX16, 5ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 Сборник данных Сравнение	Min.:1 Mult.:1	YES	60	5 ns	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	-	1.8 V	-	-	-	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B60	-	1.95 V	COMMERCIAL	1.7 V	1	SYNCHRONOUS	-	16MX16	-	1.2 mm	16	-	268435456 bit	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	13 mm	8 mm
M53D2561616A-5BG2F Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT28C64BX-15T Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 8KX8, 150ns, Parallel, CMOS, PDSO28, LEAD FREE AND HALOGEN FREE, EIAJ, SOIC-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	150 ns	-	-	CATALYST SEMICONDUCTOR INC	-	1	8192 words	8000	70 °C	-	PLASTIC/EPOXY	SOP	LEAD FREE AND HALOGEN FREE, EIAJ, SOIC-28	SOP28,.45	RECTANGULAR	SMALL OUTLINE	Transferred	SOIC	-	Yes	5 V	-	-	e3	-	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	28	R-PDSO-G28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.03 mA	8KX8	-	2.65 mm	8	0.0001 A	65536 bit	-	PARALLEL	-	EEPROM	5 V	-	1000000 Write/Erase Cycles	5 ms	-	-	-	YES	YES	NO	-	32 words	-	-	-	17.9 mm	7.5 mm
CAT28C64BX-15T Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип JS27HU2G08SDDA-25-SU Anlielectronics Тип	Jeju Semiconductor Corp	2G SLC NAND PKG 9x11mm 63FBGA 25 Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	Jeju Semiconductor Corp	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	*	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
JS27HU2G08SDDA-25-SU Jeju Semiconductor Corp RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24FC32AU Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 4KX8, Serial, CMOS, PDSO8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	-	CATALYST SEMICONDUCTOR INC	-	-	4096 words	4000	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP8,.25	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	-	No	-	-	-	e0	-	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.51	DUAL	GULL WING	-	-	0.635 mm	unknown	-	-	R-PDSO-G8	Not Qualified	-	COMMERCIAL	-	-	-	0.003 mA	4KX8	-	-	8	9e-7 A	32768 bit	-	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	-	100	HARDWARE	-	-	-	-	-	-	1010DDDR	-	-	-	-
CAT24FC32AU Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C01BU-TE13 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 128X8, Serial, CMOS, PDSO8, TSSOP-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	0.1 MHz	CATALYST SEMICONDUCTOR INC	-	-	128 words	128	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP8,.25	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	SOIC	-	No	3 V	-	-	e0	No	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	GULL WING	-	1	0.65 mm	unknown	-	8	R-PDSO-G8	Not Qualified	6 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	128X8	-	1.2 mm	8	0.000001 A	1024 bit	-	SERIAL	-	EEPROM	-	I2C	1000000 Write/Erase Cycles	10 ms	100	-	-	-	-	-	-	-	-	-	-	4.4 mm	3 mm
CAT24C01BU-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C1256-70L28M Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 32KX8, 70ns, CMOS, 0.350 X 0.550 INCH, LCC-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	70 ns	-	-	PYRAMID SEMICONDUCTOR CORP	-	-	32768 words	32000	125 °C	-55 °C	UNSPECIFIED	QCCN	0.350 X 0.550 INCH, LCC-28	LCC28,.35X.55	RECTANGULAR	CHIP CARRIER	Active	QLCC	-	No	5 V	-	-	e0	No	-	3A001.A.2.C	TIN LEAD	-	8542.32.00.41	QUAD	NO LEAD	-	1	1.27 mm	compliant	-	28	R-XQCC-N28	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	0.15 mA	32KX8	3-STATE	1.905 mm	8	0.02 A	262144 bit	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	4.5 V	-	-	-	-	-	-	-	-	13.97 mm	8.89 mm
P4C1256-70L28M Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C02AJ-TE7 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 256X8, Serial, CMOS, PDSO8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	-	CATALYST SEMICONDUCTOR INC	-	-	256 words	256	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	No	5 V	-	-	e0	-	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.51	DUAL	GULL WING	-	-	1.27 mm	unknown	-	-	R-PDSO-G8	Not Qualified	-	COMMERCIAL	-	-	-	0.003 mA	256X8	-	-	8	0.000004 A	2048 bit	-	SERIAL	-	EEPROM	-	I2C	100000 Write/Erase Cycles	-	100	-	-	-	-	-	-	-	1010DDDR	-	-	-	-
CAT24C02AJ-TE7 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип UT681C Anlielectronics Тип	Uni-Tran Semiconductor Corp	- Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UT681C Uni-Tran Semiconductor Corp RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M53D256328A-5BG2F Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: DDR DRAM, 8MX32, 5ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, MO-205, FBGA-144 Сборник данных Сравнение	Min.:1 Mult.:1	YES	144	5 ns	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	-	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	LFBGA	LFBGA,	-	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Active	-	-	-	1.8 V	-	-	-	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	S-PBGA-B144	-	1.95 V	COMMERCIAL	1.7 V	1	SYNCHRONOUS	-	8MX32	-	1.4 mm	32	-	268435456 bit	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	12 mm	12 mm
M53D256328A-5BG2F Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25040GY Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 512X8, Serial, CMOS, PDSO8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	5 MHz	CATALYST SEMICONDUCTOR INC	-	-	512 words	512	70 °C	-	PLASTIC/EPOXY	TSSOP	TSSOP, TSSOP8,.25	TSSOP8,.25	RECTANGULAR	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	Obsolete	-	-	Yes	5 V	-	-	-	-	-	EAR99	-	-	8542.32.00.51	DUAL	GULL WING	-	1	0.635 mm	unknown	-	-	R-PDSO-G8	Not Qualified	5.5 V	COMMERCIAL	2.5 V	-	SYNCHRONOUS	0.005 mA	512X8	-	-	8	0.000001 A	4096 bit	AEC-Q100	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	-	-
CAT25040GY Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MU9C2480L-90DC Anlielectronics Тип	Music Semiconductors Inc	Description: Content Addressable SRAM, 2KX64, 75ns, CMOS, PQCC44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	75 ns	-	-	MUSIC SEMICONDUCTORS INC	-	3	2048 words	2000	70 °C	-	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC44,.7SQ	LDCC44,.7SQ	SQUARE	CHIP CARRIER	Contact Manufacturer	-	-	No	3.3 V	-	-	e0	No	-	EAR99	TIN LEAD	BIT MASKING; LANCAM	8542.32.00.41	QUAD	J BEND	-	1	1.27 mm	unknown	-	-	S-PQCC-J44	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.11 mA	2KX64	-	-	64	0.002 A	131072 bit	-	PARALLEL	-	CONTENT ADDRESSABLE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MU9C2480L-90DC Music Semiconductors Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT64LC10SI-TE13 Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 64X16, Serial, CMOS, PDSO8, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	1 MHz	CATALYST SEMICONDUCTOR INC	-	-	64 words	64	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	-	No	3.3 V	-	-	e0	-	-	EAR99	TIN LEAD	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	6 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	64X16	3-STATE	1.75 mm	16	0.000003 A	1024 bit	-	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	10 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT64LC10SI-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C02LI Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 256X8, Serial, CMOS, PDIP8, 0.300 INCH, GREEN, PLASTIC, MS-001, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	-	5 MHz	CATALYST SEMICONDUCTOR INC	-	-	256 words	256	85 °C	-40 °C	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	-	Yes	5 V	-	-	e3	-	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	5.5 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.005 mA	256X8	-	5.334 mm	8	0.000001 A	2048 bit	-	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	9.271 mm	7.62 mm
CAT25C02LI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C04LI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 512X8, Serial, CMOS, PDIP8, 0.300 INCH, GREEN, PLASTIC, MS-001, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	-	5 MHz	CATALYST SEMICONDUCTOR INC	-	-	512 words	512	85 °C	-40 °C	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	-	Yes	5 V	-	-	e3	Yes	-	EAR99	MATTE TIN	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	5.5 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.005 mA	512X8	-	5.334 mm	8	0.000001 A	4096 bit	-	SERIAL	-	EEPROM	-	SPI	1000000 Write/Erase Cycles	5 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	9.271 mm	7.62 mm
CAT25C04LI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип QS7025A-20TF-02 Anlielectronics Тип	Quality Semiconductor	MULTI PORT SRAM, 8KX16, 20NS Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	QS7025A	-	-	Quality Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	Not Verified	-	-	Bulk	*	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
QS7025A-20TF-02 Quality Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SSM10484-15SC Anlielectronics Тип	Saratoga Semiconductor	Standard SRAM, 4KX4, 15ns, CDIP28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	15 ns	-	-	SARATOGA SEMICONDUCTOR	-	-	4096 words	4000	70 °C	-	CERAMIC	DIP	DIP, DIP28,.4	DIP28,.4	RECTANGULAR	IN-LINE	Obsolete	-	-	No	-	-	-	e0	-	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	2.54 mm	unknown	-	-	R-XDIP-T28	Not Qualified	-	COMMERCIAL	-	-	ASYNCHRONOUS	0.22 mA	4KX4	OPEN-EMITTER	-	4	-	16384 bit	-	PARALLEL	SEPARATE	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM10484-15SC Saratoga Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CXK5864BSP-12L Anlielectronics Тип	Sony Semiconductor	Standard SRAM, 8KX8, 120ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, MO-058AB, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	120 ns	-	-	SONY CORP	-	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	-	No	5 V	-	-	e0	No	-	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.05 mA	8KX8	3-STATE	4.4 mm	8	0.000035 A	65536 bit	-	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	2 V	-	-	-	YES	-	-	-	-	35.1 mm	7.62 mm
CXK5864BSP-12L Sony Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C198A-45CMB Anlielectronics Тип	Pyramid Semiconductor Corporation	Standard SRAM, 16KX4, 45ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-24 Сборник данных Сравнение	Min.:1 Mult.:1	NO	24	45 ns	-	-	PYRAMID SEMICONDUCTOR CORP	-	-	16384 words	16000	125 °C	-55 °C	CERAMIC, METAL-SEALED COFIRED	DIP	0.300 INCH, SIDE BRAZED, CERAMIC, DIP-24	-	RECTANGULAR	IN-LINE	Active	DIP	-	No	5 V	-	-	e0	No	-	-	TIN LEAD	-	-	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	24	R-CDIP-T24	Not Qualified	5.5 V	MILITARY	4.5 V	-	ASYNCHRONOUS	-	16KX4	-	5.08 mm	4	-	65536 bit	MIL-STD-883 Class B	PARALLEL	-	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7.62 mm
P4C198A-45CMB Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT28LV64P-20 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	200 ns	-	-	CATALYST SEMICONDUCTOR INC	-	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.6	DIP28,.6	RECTANGULAR	IN-LINE	Transferred	DIP	-	No	3.3 V	-	-	e0	-	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.008 mA	8KX8	-	5.08 mm	8	0.0001 A	65536 bit	-	PARALLEL	-	EEPROM	3 V	-	100000 Write/Erase Cycles	5 ms	-	-	-	YES	YES	NO	-	32 words	-	-	-	36.695 mm	15.24 mm
CAT28LV64P-20 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: P4C188-15JC,M53D2561616A-5BG2F,CAT28C64BX-15T,JS27HU2G08SDDA-25-SU,CAT24FC32AU.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)