Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page5

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Output Enable	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Reverse Pinout	Self Refresh	Length	Width
	Mfr. Тип MU9C2480A-70DI Anlielectronics Тип	Music Semiconductors Inc	Content Addressable SRAM, 2KX64, 52ns, CMOS, PQCC44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	52 ns	-	-	MUSIC SEMICONDUCTORS INC	3	2048 words	2000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC44,.7SQ	LDCC44,.7SQ	SQUARE	CHIP CARRIER	Contact Manufacturer	-	No	5 V	e0	No	EAR99	TIN LEAD	BIT MASKING; LANCAM	8542.32.00.41	QUAD	J BEND	-	1	1.27 mm	unknown	-	-	S-PQCC-J44	Not Qualified	5.25 V	INDUSTRIAL	4.75 V	-	ASYNCHRONOUS	0.15 mA	2KX64	-	-	64	0.007 A	131072 bit	PARALLEL	-	CONTENT ADDRESSABLE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MU9C2480A-70DI Music Semiconductors Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT93C86WI-GT3 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	CATALYST SEMICONDUCTOR INC	-	-	-	-	-	-	-	,	-	-	-	Transferred	-	-	-	-	-	EAR99	-	-	8542.32.00.51	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CAT93C86WI-GT3 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MU9C4485L-70TCC Anlielectronics Тип	Music Semiconductors Inc	Content Addressable SRAM, 4KX64, 52ns, CMOS, PQFP80 Сборник данных Сравнение	Min.:1 Mult.:1	YES	80	52 ns	-	-	MUSIC SEMICONDUCTORS INC	3	4096 words	4000	70 °C	-	PLASTIC/EPOXY	QFP	QFP, QFP80,.64SQ	QFP80,.64SQ	SQUARE	FLATPACK	Contact Manufacturer	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	LANCAM	8542.32.00.41	QUAD	GULL WING	-	1	0.635 mm	unknown	-	-	S-PQFP-G80	Not Qualified	3.6 V	COMMERCIAL	3 V	-	ASYNCHRONOUS	0.265 mA	4KX64	-	-	64	0.002 A	262144 bit	PARALLEL	-	CONTENT ADDRESSABLE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MU9C4485L-70TCC Music Semiconductors Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24LC08J14 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 1KX8, Serial, CMOS, PDSO14, 0.150 INCH, SOIC-14 Сборник данных Сравнение	Min.:1 Mult.:1	YES	14	-	0.1 MHz	-	CATALYST SEMICONDUCTOR INC	-	1024 words	1000	70 °C	-	PLASTIC/EPOXY	SOP	SOP, SOP14,.25	SOP14,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	5 V	e0	No	EAR99	TIN LEAD	2 WIRE INTERFACE; PAGE WRITE	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	14	R-PDSO-G14	Not Qualified	6 V	COMMERCIAL	3 V	-	SYNCHRONOUS	0.003 mA	1KX8	-	1.75 mm	8	0.000004 A	8192 bit	SERIAL	-	EEPROM	I2C	100000 Write/Erase Cycles	10 ms	100	-	-	-	-	1010DMMR	-	-	-	-	-	8.65 mm	3.9 mm
CAT24LC08J14 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L16161A-7T Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Сборник данных Сравнение	Min.:1 Mult.:1	YES	50	6 ns	143 MHz	-	ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC	-	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50	TSOP50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	50	R-PDSO-G50	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.14 mA	1MX16	3-STATE	1.2 mm	16	0.002 A	16777216 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	2048	-	1,2,4,8,FP	1,2,4,8	DUAL BANK PAGE BURST	-	YES	20.95 mm	10.16 mm
M12L16161A-7T Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC256JI Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 32KX8, Serial, CMOS, PDSO8, Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	-	-	CATALYST SEMICONDUCTOR INC	-	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Transferred	-	No	-	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.51	DUAL	GULL WING	-	-	1.27 mm	unknown	-	-	R-PDSO-G8	Not Qualified	-	INDUSTRIAL	-	-	-	0.003 mA	32KX8	-	-	8	0.000001 A	262144 bit	SERIAL	-	EEPROM	I2C	100000 Write/Erase Cycles	-	100	HARDWARE	-	-	-	10100DDR	-	-	-	-	-	-	-
CAT24WC256JI Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24FC32KA Anlielectronics Тип	Catalyst Semiconductor	Description: EEPROM, 4KX8, Serial, CMOS, PDSO8, EIAJ, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	1 MHz	-	CATALYST SEMICONDUCTOR INC	-	4096 words	4000	105 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.3	SOP8,.3	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	4KX8	-	2.03 mm	8	9e-7 A	32768 bit	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	5 ms	100	HARDWARE	-	-	-	1010DDDR	-	-	-	-	-	5.3 mm	5.25 mm
CAT24FC32KA Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24C44GVI-TE13 Anlielectronics Тип	Catalyst Semiconductor	Description: Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, GREEN, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	375 ns	-	-	CATALYST SEMICONDUCTOR INC	-	16 words	16	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Transferred	SOIC	Yes	5 V	e4	-	EAR99	NICKEL PALLADIUM GOLD	-	8542.32.00.41	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	-	SYNCHRONOUS	0.003 mA	16X16	-	1.75 mm	16	0.00003 A	256 bit	SERIAL	-	NON-VOLATILE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT24C44GVI-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CXK5864BSP-70LL Anlielectronics Тип	Sony Semiconductor	Description: Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, MO-058AB, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	70 ns	-	-	SONY CORP	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	1	ASYNCHRONOUS	0.05 mA	8KX8	3-STATE	4.4 mm	8	0.000015 A	65536 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	2 V	YES	-	-	-	-	-	-	-	35.1 mm	7.62 mm
CXK5864BSP-70LL Sony Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MU9C4480L-90DI Anlielectronics Тип	Music Semiconductors Inc	Content Addressable SRAM, 4KX64, 75ns, CMOS, PQCC44 Сборник данных Сравнение	Min.:1 Mult.:1	YES	44	75 ns	-	-	MUSIC SEMICONDUCTORS INC	3	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	QCCJ	QCCJ, LDCC44,.7SQ	LDCC44,.7SQ	SQUARE	CHIP CARRIER	Contact Manufacturer	-	No	3.3 V	e0	No	EAR99	TIN LEAD	BIT MASKING; LANCAM	8542.32.00.41	QUAD	J BEND	-	1	1.27 mm	unknown	-	-	S-PQCC-J44	Not Qualified	3.6 V	INDUSTRIAL	3 V	-	ASYNCHRONOUS	0.16 mA	4KX64	-	-	64	0.002 A	262144 bit	PARALLEL	-	CONTENT ADDRESSABLE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MU9C4480L-90DI Music Semiconductors Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип HXB15H4G160AF-11M Anlielectronics Тип	Xi'an UniIC Semiconductors Co Ltd	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	96	-	-	-	XIAN UNILC SEMICONDUCTORS CO LTD	-	268435456 words	256000000	95 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	1.5 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	R-PBGA-B96	-	1.575 V	OTHER	1.425 V	1	SYNCHRONOUS	-	256MX16	-	1.2 mm	16	-	4294967296 bit	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	MULTI BANK PAGE BURST	-	YES	13.5 mm	9 mm
HXB15H4G160AF-11M Xi'an UniIC Semiconductors Co Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SCB25D1G160AE-5BI Anlielectronics Тип	Xi'an UniIC Semiconductors Co Ltd	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.7 ns	200 MHz	-	XIAN UNILC SEMICONDUCTORS CO LTD	-	67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Contact Manufacturer	-	-	2.5 V	-	-	EAR99	-	-	8542.32.00.32	DUAL	GULL WING	-	1	0.65 mm	unknown	-	-	R-PDSO-G66	-	2.7 V	INDUSTRIAL	2.3 V	1	SYNCHRONOUS	0.26 mA	64MX16	3-STATE	1.2 mm	16	0.012 A	1073741824 bit	-	COMMON	DDR1 DRAM	-	-	-	-	-	2.3 V	-	8192	-	2,4,8	2,4,8	DUAL BANK PAGE BURST	-	YES	22.22 mm	11.76 mm
SCB25D1G160AE-5BI Xi'an UniIC Semiconductors Co Ltd RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M14D5121632A-2.5BIG2A Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	84	0.4 ns	-	-	ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC	-	33554432 words	32000000	95 °C	-40 °C	PLASTIC/EPOXY	TFBGA	BGA-84	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Active	-	Yes	1.8 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.28	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	-	R-PBGA-B84	-	1.9 V	INDUSTRIAL	1.7 V	1	SYNCHRONOUS	-	32MX16	-	1.2 mm	16	-	536870912 bit	-	-	DDR2 DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	-	YES	12.5 mm	8 mm
M14D5121632A-2.5BIG2A Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24WC256KI-TE13 Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 32KX8, Serial, CMOS, PDSO8, EIAJ, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	0.4 MHz	-	CATALYST SEMICONDUCTOR INC	-	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.3	SOP8,.3	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.51	DUAL	GULL WING	240	1	1.27 mm	unknown	30	8	R-PDSO-G8	Not Qualified	6 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.003 mA	32KX8	-	2.03 mm	8	0.000001 A	262144 bit	SERIAL	-	EEPROM	I2C	100000 Write/Erase Cycles	10 ms	100	HARDWARE	-	-	-	10100DDR	-	-	-	-	-	5.3 mm	5.25 mm
CAT24WC256KI-TE13 Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L2561616A-6BG2S Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, BGA-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	166 MHz	2017-08-17	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	VFBGA	BGA-54	BGA54,6X9,30	SQUARE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	Contact Manufacturer	-	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	-	1	0.8 mm	unknown	-	-	S-PBGA-B54	-	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	0.08 mA	16MX16	3-STATE	1 mm	16	-	268435456 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	3 V	-	8192	-	1,2,4,8	1,2,4,8	FOUR BANK PAGE BURST	NO	YES	8 mm	8 mm
M12L2561616A-6BG2S Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L2561616A-6TG Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	NOT SPECIFIED	54	R-PDSO-G54	Not Qualified	3.6 V	COMMERCIAL	3 V	1	SYNCHRONOUS	-	16MX16	-	1.2 mm	16	-	268435456 bit	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	-	YES	22.22 mm	10.16 mm
M12L2561616A-6TG Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип MU9C5640LF-90TZC Anlielectronics Тип	Music Semiconductors Inc	Content Addressable SRAM, 256X64, 90ns, CMOS, PQFP32 Сборник данных Сравнение	Min.:1 Mult.:1	YES	32	90 ns	-	-	MUSIC SEMICONDUCTORS INC	3	256 words	256	70 °C	-	PLASTIC/EPOXY	QFP	QFP, QFP32,.35SQ,32	QFP32,.35SQ,32	SQUARE	FLATPACK	Contact Manufacturer	-	Yes	3.3 V	-	-	EAR99	-	-	8542.32.00.41	QUAD	GULL WING	260	-	0.8 mm	unknown	-	-	S-PQFP-G32	Not Qualified	-	COMMERCIAL	-	-	-	0.03 mA	256X64	-	-	64	0.002 A	16384 bit	-	-	CONTENT ADDRESSABLE SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MU9C5640LF-90TZC Music Semiconductors Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT25C32SA Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8 Сборник данных Сравнение	Min.:1 Mult.:1	YES	8	-	3 MHz	-	CATALYST SEMICONDUCTOR INC	-	4096 words	4000	105 °C	-40 °C	PLASTIC/EPOXY	SOP	SOP, SOP8,.25	SOP8,.25	RECTANGULAR	SMALL OUTLINE	Obsolete	SOIC	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	GULL WING	-	1	1.27 mm	unknown	-	8	R-PDSO-G8	Not Qualified	6 V	INDUSTRIAL	2.5 V	-	SYNCHRONOUS	0.01 mA	4KX8	-	1.75 mm	8	0.00001 A	32768 bit	SERIAL	-	EEPROM	SPI	1000000 Write/Erase Cycles	10 ms	100	HARDWARE/SOFTWARE	-	-	-	-	-	-	-	-	-	4.9 mm	3.9 mm
CAT25C32SA Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C164-35JC Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	35 ns	-	-	PYRAMID SEMICONDUCTOR CORP	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	SOJ	SOJ, SOJ28,.34	SOJ28,.34	RECTANGULAR	SMALL OUTLINE	Active	SOJ	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	compliant	-	28	R-PDSO-J28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.145 mA	8KX8	3-STATE	3.7592 mm	8	0.015 A	65536 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	4.5 V	-	-	-	-	-	-	-	-	18.161 mm	7.5184 mm
P4C164-35JC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C164-20PC Anlielectronics Тип	Pyramid Semiconductor Corporation	Description: Standard SRAM, 8KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	20 ns	-	-	PYRAMID SEMICONDUCTOR CORP	-	8192 words	8000	70 °C	-	PLASTIC/EPOXY	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Active	DIP	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	28	R-PDIP-T28	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.155 mA	8KX8	3-STATE	5.334 mm	8	0.015 A	65536 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	4.5 V	-	-	-	-	-	-	-	-	34.8615 mm	7.62 mm
P4C164-20PC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: MU9C2480A-70DI,CAT93C86WI-GT3,MU9C4485L-70TCC,CAT24LC08J14,M12L16161A-7T.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)