Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page9

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Surface Mount	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Date Of Intro	Ihs Manufacturer	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Supply Voltage-Max (Vsup)	Temperature Grade	Supply Voltage-Min (Vsup)	Number of Ports	Operating Mode	Supply Current-Max	Organization	Output Characteristics	Seated Height-Max	Memory Width	Standby Current-Max	Memory Density	Parallel/Serial	I/O Type	Memory IC Type	Serial Bus Type	Endurance	Write Cycle Time-Max (tWC)	Data Retention Time-Min	Write Protection	Standby Voltage-Min	Refresh Cycles	I2C Control Byte	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width
	Mfr. Тип M12L64164A-7TIG2Y Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	6 ns	-	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2,	-	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	-	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	-	R-PDSO-G54	-	3.6 V	INDUSTRIAL	3 V	1	SYNCHRONOUS	-	4MX16	-	1.2 mm	16	-	67108864 bit	-	-	SYNCHRONOUS DRAM	-	-	-	-	-	-	-	-	-	-	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
M12L64164A-7TIG2Y Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M13S2561616A-5TIG2S Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Сборник данных Сравнение	Min.:1 Mult.:1	YES	66	0.7 ns	200 MHz	-	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	16777216 words	16000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2,	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Contact Manufacturer	-	-	2.5 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.24	DUAL	GULL WING	-	1	0.65 mm	unknown	-	-	R-PDSO-G66	-	2.7 V	INDUSTRIAL	2.4 V	1	SYNCHRONOUS	0.22 mA	16MX16	3-STATE	1.2 mm	16	0.006 A	268435456 bit	-	COMMON	DDR1 DRAM	-	-	-	-	-	-	8192	-	2,4,8	-	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
M13S2561616A-5TIG2S Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M53D1G3232A-5BG Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	Description: DDR DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC	-	-	-	-	-	-	-	-	-	-	Contact Manufacturer	-	Yes	-	-	-	EAR99	-	-	-	-	-	NOT SPECIFIED	-	-	unknown	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	DDR DRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-
M53D1G3232A-5BG Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C1256-15JI Anlielectronics Тип	Pyramid Semiconductor Corporation	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Сборник данных Сравнение	Min.:1 Mult.:1	YES	28	15 ns	-	-	PYRAMID SEMICONDUCTOR CORP	32768 words	32000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	0.300 INCH, PLASTIC, SOJ-28	SOJ28,.34	RECTANGULAR	SMALL OUTLINE	Active	SOJ	No	5 V	e0	No	EAR99	TIN LEAD	-	8542.32.00.41	DUAL	J BEND	-	1	1.27 mm	compliant	-	28	R-PDSO-J28	Not Qualified	5.5 V	INDUSTRIAL	4.5 V	-	ASYNCHRONOUS	0.17 mA	32KX8	3-STATE	3.7592 mm	8	0.01 A	262144 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	4.5 V	-	-	-	-	-	-	18.161 mm	7.5184 mm
P4C1256-15JI Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип CAT24FC32API Anlielectronics Тип	Catalyst Semiconductor	EEPROM, 4KX8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Сборник данных Сравнение	Min.:1 Mult.:1	NO	8	-	0.4 MHz	-	CATALYST SEMICONDUCTOR INC	4096 words	4000	85 °C	-40 °C	PLASTIC/EPOXY	DIP	DIP, DIP8,.3	DIP8,.3	RECTANGULAR	IN-LINE	Obsolete	DIP	No	2.5 V	e0	-	EAR99	TIN LEAD	-	8542.32.00.51	DUAL	THROUGH-HOLE	-	1	2.54 mm	unknown	-	8	R-PDIP-T8	Not Qualified	3.6 V	INDUSTRIAL	1.8 V	-	SYNCHRONOUS	0.003 mA	4KX8	-	4.57 mm	8	9e-7 A	32768 bit	SERIAL	-	EEPROM	I2C	1000000 Write/Erase Cycles	5 ms	100	HARDWARE	-	-	1010DDDR	-	-	-	-	9.59 mm	7.62 mm
CAT24FC32API Catalyst Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип P4C169-20PC Anlielectronics Тип	Pyramid Semiconductor Corporation	Standard SRAM, 4KX4, 20ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Сборник данных Сравнение	Min.:1 Mult.:1	NO	20	20 ns	-	-	PYRAMID SEMICONDUCTOR CORP	4096 words	4000	70 °C	-	PLASTIC/EPOXY	DIP	0.300 INCH, PLASTIC, DIP-20	DIP20,.3	RECTANGULAR	IN-LINE	Active	DIP	No	5 V	e0	No	EAR99	TIN LEAD	FAST CHIP SELECT CONTROL	8542.32.00.41	DUAL	THROUGH-HOLE	-	1	2.54 mm	compliant	-	20	R-PDIP-T20	Not Qualified	5.5 V	COMMERCIAL	4.5 V	-	ASYNCHRONOUS	0.13 mA	4KX4	3-STATE	5.08 mm	4	-	16384 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	4.5 V	-	-	-	-	-	-	25.908 mm	7.62 mm
P4C169-20PC Pyramid Semiconductor Corporation RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип M12L128168A-6TG2S Anlielectronics Тип	Elite Semiconductor Memory Technology Inc	DRAM, Сборник данных Сравнение	Min.:1 Mult.:1	YES	54	5.4 ns	166 MHz	2017-08-18	ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC	8388608 words	8000000	70 °C	-	PLASTIC/EPOXY	TSOP2	,	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	-	-	3.3 V	-	-	EAR99	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.8 mm	unknown	-	-	R-PDSO-G54	-	3.6 V	-	3 V	1	SYNCHRONOUS	0.2 mA	8MX16	-	1.2 mm	16	0.002 A	134217728 bit	-	COMMON	SYNCHRONOUS DRAM	-	-	-	-	-	-	4096	-	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
M12L128168A-6TG2S Elite Semiconductor Memory Technology Inc RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип SSM7164-25SC Anlielectronics Тип	Saratoga Semiconductor	Standard SRAM, 8KX8, 25ns, CDIP28 Сборник данных Сравнение	Min.:1 Mult.:1	NO	28	25 ns	-	-	SARATOGA SEMICONDUCTOR	8192 words	8000	70 °C	-	CERAMIC	DIP	DIP, DIP28,.3	DIP28,.3	RECTANGULAR	IN-LINE	Obsolete	-	No	5 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	8542.32.00.41	DUAL	THROUGH-HOLE	-	-	2.54 mm	unknown	-	-	R-XDIP-T28	Not Qualified	-	COMMERCIAL	-	-	ASYNCHRONOUS	0.15 mA	8KX8	3-STATE	-	8	-	65536 bit	PARALLEL	COMMON	STANDARD SRAM	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM7164-25SC Saratoga Semiconductor RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: M12L64164A-7TIG2Y,M13S2561616A-5TIG2S,M53D1G3232A-5BG,P4C1256-15JI,CAT24FC32API.Integrated Circuits (ICs) type:Embedded - Microcontrollers(129432),Memory(111901),PMIC - Supervisors(101743),PMIC - Voltage Regulators - Linear(101187),PMIC - Voltage Regulators - DC DC Switching Regulators(62822) .Memory has 168 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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Integrated Circuits (ICs)