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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Weight | Driver Configuration | Logic voltage-VIL, VIH | Turn Off Delay Time | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Supply | Number of Outputs | Max Output Current | Number of Channels | Max Supply Voltage | Min Supply Voltage | Operating Supply Current | Element Configuration | Output Current | Propagation Delay | Input Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Rise / Fall Time (Typ) | Channel Type | Number of Drivers | Gate Type | Current - Peak Output (Source, Sink) | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIXDN604PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm), 6 Leads | 8 | 8-DIP | 2.26799g | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | 2 | 35V | 4.5V | 10μA | - | 4A | 40 ns | Non-Inverting | 50 ns | 16ns | 14 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | No | ROHS3 Compliant | - | ||
| IXDN604PI | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN609SIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | 75 ns | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 2A | 1 | 35V | 4.5V | 10μA | - | 2A | 30 ns | Non-Inverting | 75 ns | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | No | ROHS3 Compliant | Lead Free | ||
| IXDN609SI | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN609PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | 2.26799g | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2014 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | - | 1 | 35V | 4.5V | 10μA | - | - | - | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | ROHS3 Compliant | - | ||
| IXDN609PI | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDD604SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | 2 | 35V | 4.5V | 10μA | - | 4A | 40 ns | Non-Inverting | 50 ns | 16ns | 14 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | No | ROHS3 Compliant | - | ||
| IXDD604SIA | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDD614CIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | TO-220-5 | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 14A | 1 | 35V | 4.5V | - | - | - | 70 ns | Non-Inverting | - | 35ns | 25 ns | 25ns 18ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | No | ROHS3 Compliant | - | ||
| IXDD614CI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN609SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | - | 1 | 35V | 4.5V | 10μA | - | - | 30 ns | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | No | ROHS3 Compliant | Lead Free | ||
| IXDN609SIA | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD609SIAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 2A 1-OUT Lo Side Non-Inv Automotive 8-Pin SOIC EP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 2A | 1 | 35V | 4.5V | 10μA | - | 2A | 30 ns | Non-Inverting | 60 ns | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | No | ROHS3 Compliant | Lead Free | ||
| IXDD609SI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD609SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 2A | 1 | 35V | 4.5V | 10μA | - | 2A | 30 ns | Non-Inverting | 60 ns | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | No | ROHS3 Compliant | Lead Free | ||
| IXDD609SIA | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD604SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | - | 35V | 4.5V | 10μA | - | 4A | 50 ns | Non-Inverting | - | 9ns | 8 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | ROHS3 Compliant | Lead Free | ||
| IXDD604SIATR | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN604SITRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | - | 35V | 4.5V | 10μA | - | 4A | 50 ns | Non-Inverting | - | 9ns | 8 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | ROHS3 Compliant | Lead Free | ||
| IXDN604SITR | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN609YIAnlielectronics Тип | IXYS Integrated Circuits Division |
9-AMPERE LOW-SIDE ULTRAFAST MO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | 1.59999g | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2011 | Active | 3 (168 Hours) | 125°C | -40°C | 4.5V~35V | 1 | 2A | 1 | 35V | 4.5V | 10μA | - | - | 30 ns | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | ROHS3 Compliant | - | ||
| IXDN609YI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN604SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tape & Reel (TR) | 2010 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | - | 35V | 4.5V | 10μA | - | 4A | 50 ns | Non-Inverting | 50 ns | 16ns | 14 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | No | ROHS3 Compliant | Lead Free | ||
| IXDN604SIATR | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN609SITRAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 9A 1-OUT Low Side Non-Inv Automotive 8-Pin SOIC EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 9A | - | 35V | 4.5V | 10μA | - | - | 60 ns | Non-Inverting | 60 ns | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | ROHS3 Compliant | - | ||
| IXDN609SITR | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN614PIAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 14A 1-OUT Lo Side Non-Inv 8-Pin DIP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | 2.26799g | Low-Side | 0.8V 3V | 70 ns | -55°C~150°C TJ | Tube | 2011 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 14A | 1 | 35V | 4.5V | 1mA | - | 14A | 70 ns | Non-Inverting | 70 ns | 25ns | 18 ns | 25ns 18ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | ROHS3 Compliant | - | ||
| IXDN614PI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD614SIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2011 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 14A | 1 | 35V | 4.5V | - | - | - | 70 ns | Non-Inverting | 70 ns | 35ns | 25 ns | 25ns 18ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | No | ROHS3 Compliant | Lead Free | ||
| IXDD614SI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD604PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | 2.26799g | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 4A | 2 | 35V | 4.5V | 10μA | - | 4A | - | Non-Inverting | - | 9ns | 8 ns | 9ns 8ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | ROHS3 Compliant | - | ||
| IXDD604PI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN602PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2004 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 2A | 2 | 35V | 4.5V | - | - | - | 60 ns | Non-Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | ROHS3 Compliant | Lead Free | ||
| IXDN602PI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI602PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2011 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 2 | 2A | 2 | 35V | 4.5V | - | - | - | 60 ns | Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | ROHS3 Compliant | - | ||
| IXDI602PI | |||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD614PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | 14A | 1 | 35V | 4.5V | - | - | - | 70 ns | Non-Inverting | 70 ns | 35ns | 25 ns | 25ns 18ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | No | ROHS3 Compliant | Lead Free | ||
| IXDD614PI | |||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDI609CIAnlielectronics Тип | IXYS Integrated Circuits Division |
Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | 5 | TO-220-5 | 3.000003g | Low-Side | 0.8V 3V | 60 ns | -55°C~150°C TJ | Tube | 2012 | Active | 1 (Unlimited) | 125°C | -40°C | 4.5V~35V | 1 | - | 1 | 35V | 4.5V | 10μA | Single | 9A | - | Inverting | 60 ns | 22ns | 15 ns | 22ns 15ns | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | ROHS3 Compliant | Lead Free | ||
| IXDI609CI |
Индекс :
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