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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Supplier Device Package | Weight | Driver Configuration | Logic voltage-VIL, VIH | Turn Off Delay Time | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Outputs | Qualification Status | Output Voltage | Max Output Current | Operating Supply Voltage | Power Supplies | Number of Channels | Max Supply Voltage | Min Supply Voltage | Operating Supply Current | Nominal Supply Current | Output Current | Propagation Delay | Input Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипIX6R11S3T/RAnlielectronics Тип | IXYS |
IC GATE DRVR HALF-BRIDGE 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | - | - | 16-SOIC | - | Half-Bridge | 6V 9.6V | - | -40°C~125°C TA | Tape & Reel (TR) | 2007 | - | Obsolete | 1 (Unlimited) | - | - | - | 125°C | -40°C | 1.25W | 10V~35V | - | - | - | - | - | - | - | IX6*11 | - | - | 2 | - | - | - | - | - | - | - | 10V | - | - | - | - | Non-Inverting | - | 35ns | 25 ns | 25ns 17ns | - | Independent | 2 | - | - | IGBT, N-Channel MOSFET | 6A 6A | - | - | 600V | - | - | - | - | RoHS Compliant | - | ||
| IX6R11S3T/R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI409CIAnlielectronics Тип | IXYS |
IC MOSFET DRVR 9A LOSIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | TO-220-5 | - | - | - | 2.299997g | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | - | - | 260 | 1 | 18V | - | 35 | IXD*409 | 3 | R-PSFM-T5 | - | Not Qualified | - | 9A | - | - | - | - | - | - | 3mA | 9A | - | Inverting | - | 15ns | 15 ns | 10ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.04 µs | 9A | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | 0.036 µs | - | - | - | - | - | RoHS Compliant | Lead Free | ||
| IXDI409CI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI502PIAnlielectronics Тип | IXYS |
IC MOSF DRVR FAST DUAL INV 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | 8 | - | 599.989307mg | Low-Side | 0.8V 3V | 30 ns | -55°C~150°C TJ | Tube | 2010 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 2 | 15V | - | NOT SPECIFIED | IXD*502 | 8 | - | - | Not Qualified | - | - | 15V | 4.5/30V | - | - | - | - | 3mA | - | - | Inverting | 32 ns | 10ns | 9 ns | 7.5ns 6.5ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.04 μs | 2A | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | NO | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | Lead Free | ||
| IXDI502PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDI602SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8 | 8-SOIC | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | - | 2A | - | - | - | 35V | 4.5V | - | - | - | 60 ns | Inverting | 60 ns | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDI602SIATR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN630MCIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2011 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 9V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9V | 30A | - | - | 1 | 35V | 7V | 10μA | - | 30A | 65 ns | Non-Inverting | 100 ns | 20ns | 18 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDN630MCI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI630MCIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 9V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9V | 30A | - | - | 1 | 35V | 9V | 10μA | - | 30A | 65 ns | Inverting | 100 ns | 20ns | 20 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI630MCI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIX2113BAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | - | - | 16-SOIC | - | Half-Bridge | 6V 9.5V | - | -40°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | - | - | - | 10V~20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Inverting | - | - | - | 9.4ns 9.7ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | 600V | - | - | - | - | ROHS3 Compliant | - | ||
| IX2113B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD504D2Anlielectronics Тип | IXYS |
IC GATE DRVR LOW-SIDE 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | - | 8 | - | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Bulk | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | NO LEAD | NOT SPECIFIED | 2 | 18V | 1mm | NOT SPECIFIED | IXD*504 | 8 | - | - | Not Qualified | - | - | - | 4.5/30V | - | - | - | - | 20mA | - | - | Non-Inverting | - | 16ns | 14 ns | 9ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.6 µs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.59 µs | - | - | 5mm | 4mm | - | RoHS Compliant | - | ||
| IXDD504D2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDE509SIAAnlielectronics Тип | IXYS |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | - | 449.991981mg | Low-Side | 0.8V 2.4V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*509 | 8 | R-PDSO-G8 | - | Not Qualified | - | - | - | - | - | - | - | - | 75mA | - | - | Inverting | - | 45ns | 40 ns | 25ns 23ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | - | 9A | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | - | - | - | 4.9mm | 3.9mm | - | RoHS Compliant | - | ||
| IXDE509SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI430YIAnlielectronics Тип | IXYS |
IC DRVR MOSF/IGBT 30A TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | - | - | 1.59999g | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Bulk | 2005 | - | Obsolete | 1 (Unlimited) | 5 | EAR99 | - | - | - | 2W | 8.5V~35V | - | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*430 | 4 | R-PSSO-G5 | - | Not Qualified | - | 30A | - | - | - | - | - | - | 3mA | 30A | - | Inverting | - | 20ns | 18 ns | 18ns 16ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 1 | 0.045 µs | 30A | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | YES | 0.039 µs | - | 4.8mm | 9.975mm | - | - | RoHS Compliant | Lead Free | ||
| IXDI430YI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI414YIAnlielectronics Тип | IXYS |
IC DRIVER MOSF/IGBT 14A TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | - | - | 1.59999g | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 5 | EAR99 | - | - | - | 2W | 4.5V~35V | - | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*414 | 4 | R-PSSO-G5 | - | Not Qualified | - | - | 35V | - | - | - | - | - | 3mA | 14A | - | Inverting | - | 27ns | 25 ns | 22ns 20ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Single | 1 | 0.033 µs | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | 0.034 µs | - | 4.8mm | 9.975mm | - | - | RoHS Compliant | - | ||
| IXDI414YI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDI504SIAT/RAnlielectronics Тип | IXYS |
IC GATE DRIVER DUAL 4A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | YES | - | - | 449.991981mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | GULL WING | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*504 | 8 | R-PDSO-G8 | - | Not Qualified | - | - | - | 4.5/30V | - | - | - | - | 10mA | - | - | Inverting | - | 16ns | 14 ns | 9ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.06 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.05 μs | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | - | ||
| IXDI504SIAT/R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN509PIAnlielectronics Тип | IXYS |
IC GATE DRIVER SGL 9A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | - | - | 599.989307mg | Low-Side | 0.8V 2.4V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 1 | 18V | 2.54mm | NOT SPECIFIED | IXD*509 | 8 | R-PDIP-T8 | - | Not Qualified | - | - | - | 4.5/30V | - | - | - | - | 75mA | - | - | Non-Inverting | - | 45ns | 40 ns | 25ns 23ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.055 μs | 9A | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | 0.04 μs | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | - | ||
| IXDN509PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD514D1Anlielectronics Тип | IXYS |
IC GATE DRIVER 14A LO SIDE 6-DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 6-VDFN Exposed Pad | - | 6 | - | - | Low-Side | 1V 2.5V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 6 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | NO LEAD | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*514 | 6 | - | - | Not Qualified | - | - | - | - | - | - | - | - | 3mA | - | - | Non-Inverting | - | 40ns | 50 ns | 25ns 22ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | - | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | NO | - | - | 0.9mm | 5mm | 4mm | - | RoHS Compliant | - | ||
| IXDD514D1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIX2204NEAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | Surface Mount | Surface Mount | 16-SOIC (0.154, 3.90mm Width) | - | - | - | - | Low-Side | 0.8V 2V | - | -55°C~150°C TJ | Tube | 2014 | - | Obsolete | 1 (Unlimited) | - | - | - | - | - | - | -10V~25V | - | - | - | - | - | - | - | IX2204 | - | - | - | - | - | 4A | - | - | - | - | - | - | - | - | - | Non-Inverting | - | - | - | - 8ns | - | Independent | 2 | - | - | IGBT | 2A 4A | - | - | - | - | - | - | - | RoHS Compliant | - | ||
| IX2204NE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD630MCIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 9V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9V | 30A | - | - | 1 | 35V | 7V | 10μA | - | 30A | 65 ns | Non-Inverting | 100 ns | 20ns | 18 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDD630MCI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI630CIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2011 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 12.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 12.5V | 30A | - | - | 1 | 35V | 10V | 10μA | - | 30A | 65 ns | Inverting | 100 ns | 20ns | 18 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDI630CI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD430YIAnlielectronics Тип | IXYS |
IC DRVR MOSF/IGBT 30A TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | - | - | 1.59999g | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Bulk | 2005 | - | Obsolete | 1 (Unlimited) | 5 | EAR99 | - | - | - | 2W | 8.5V~35V | - | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*430 | 4 | R-PSSO-G5 | - | Not Qualified | - | - | 35V | - | - | - | - | - | 3mA | 30A | - | Non-Inverting | - | 20ns | 18 ns | 18ns 16ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 1 | 0.045 µs | 30A | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | YES | 0.039 µs | - | 4.8mm | 9.975mm | - | - | RoHS Compliant | Lead Free | ||
| IXDD430YI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN514PIAnlielectronics Тип | IXYS |
IC GATE DRIVER SGL 14A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | - | - | 599.989307mg | Low-Side | 1V 2.5V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 1 | 18V | 2.54mm | NOT SPECIFIED | IXD*514 | 8 | R-PDIP-T8 | - | Not Qualified | - | - | 18V | - | - | - | - | - | 3mA | - | - | Non-Inverting | - | 40ns | 50 ns | 25ns 22ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | - | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | NO | - | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | - | ||
| IXDN514PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIX4340NTRAnlielectronics Тип | IXYS Integrated Circuits Division |
5A, DUAL LOW-SIDE, NON-INVERTING
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | 8-SOIC | - | Low-Side | 0.8V 2.5V | - | -55°C~150°C | Tape & Reel (TR) | - | - | Active | - | - | - | - | - | - | - | 5V~20V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | CMOS/TTL | - | - | - | 7ns 7ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 5A 5A | - | - | - | - | - | - | - | - | - | ||
| IX4340NTR |
Индекс :
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