- Все продукты
- /
- Integrated Circuits (ICs)
- /
- PMIC - Gate Drivers
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Weight | Driver Configuration | Logic voltage-VIL, VIH | Turn Off Delay Time | Operating Temperature | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Number of Outputs | Qualification Status | Output Voltage | Max Output Current | Number of Channels | Max Supply Voltage | Min Supply Voltage | Operating Supply Current | Element Configuration | Nominal Supply Current | Output Current | Propagation Delay | Input Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | Turn Off Time | Built-in Protections | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипIXDN609SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
9-AMPERE LOW-SIDE ULTRAFAST MO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | - | - | 35V | 4.5V | 10μA | - | - | - | - | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDN609SIATR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIX4427NTRAnlielectronics Тип | IXYS Integrated Circuits Division |
1.5A Dual Non-Inverting Low Side Gate Driver T&r Rohs Compliant: Yes
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 2.4V | 60 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | - | - | 150°C | -55°C | 4.5V~30V | - | - | - | - | - | - | - | - | 2 | - | - | 1.5A | 2 | 35V | 4.5V | 4mA | - | - | 1.5A | - | Non-Inverting | 60 ns | 10ns | 8 ns | 10ns 8ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 1.5A 1.5A | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IX4427NTR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI602SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
2-AMPERE DUAL LOW-SIDE ULTRAFA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 2 | - | - | 2A | 1 | 35V | 4.5V | - | - | - | - | 60 ns | Inverting | 60 ns | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDI602SIA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN630YIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | 1.59999g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2012 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 12.5V~35V | - | - | - | - | - | - | - | - | 1 | - | 12.5V | 30A | 1 | 35V | 10V | 10μA | - | - | 30A | 65 ns | Non-Inverting | 100 ns | 20ns | 18 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDN630YI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDI630YIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | 1.59999g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2012 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 12.5V~35V | - | - | - | - | - | - | - | - | 1 | - | 12.5V | 30A | 1 | 35V | 10V | 10μA | - | - | 30A | 65 ns | Inverting | 100 ns | 20ns | 18 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDI630YI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI614YIAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 14A 1-OUT Lo Side Inv 6-Pin(5+Tab) TO-263 Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2015 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | 14A | 1 | 35V | 4.5V | - | - | - | - | 70 ns | Inverting | 70 ns | 35ns | 25 ns | 25ns 18ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI614YI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDD609CIAnlielectronics Тип | IXYS Integrated Circuits Division |
9-AMPERE LOW-SIDE ULTRAFAST MO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | 5 | TO-220-5 | 3.000003g | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2014 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | - | 1 | 35V | 4.5V | 10μA | - | - | 2A | - | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDD609CI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN614YIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2012 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | 14A | 1 | 35V | 4.5V | - | - | - | - | 70 ns | Non-Inverting | 70 ns | 35ns | 25 ns | 25ns 18ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDN614YI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDF602SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 2A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | 60 ns | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 2 | - | - | 2A | 2 | 35V | 4.5V | 1mA | - | - | 2A | 60 ns | Inverting, Non-Inverting | 60 ns | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDF602SIA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDI614PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2007 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | 14A | 1 | 35V | 4.5V | - | - | - | - | 70 ns | Inverting | - | 35ns | 25 ns | 25ns 18ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI614PI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI630MYIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | TO-263-5 | 1.59999g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2011 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 9V~35V | - | - | - | - | - | - | - | - | 1 | - | 9V | 30A | 1 | 35V | 9V | 10μA | - | - | 30A | 65 ns | Inverting | 100 ns | 20ns | 20 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI630MYI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIX4340NETRAnlielectronics Тип | IXYS Integrated Circuits Division |
5-AMP Dual Low-side Mosfet Drive
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | - | - | - | Low-Side | 0.8V 2.5V | - | -55°C~150°C TJ | Tape & Reel (TR) | - | Obsolete | 1 (Unlimited) | - | EAR99 | - | - | 5V~20V | - | - | 260 | - | - | 30 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Non-Inverting | - | - | - | 7ns 7ns | NAND GATE BASED MOSFET DRIVER | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 5A 5A | - | - | - | - | - | - | - | Non-RoHS Compliant | - | ||
| IX4340NETR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI609SIAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 2A 1-OUT Lo Side Inv 8-Pin SOIC EP Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | 9A | 1 | 35V | 4.5V | 10μA | - | - | - | - | Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDI609SI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN602D2TRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 2A DUAL HS 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | 8 | 8-DFN-EP (5x4) | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | Active | 3 (168 Hours) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 2 | - | - | 2A | 2 | 35V | 4.5V | - | - | - | - | 60 ns | Non-Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDN602D2TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN609CIAnlielectronics Тип | IXYS Integrated Circuits Division |
Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 Formed Leads | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3V | 60 ns | -55°C~150°C TJ | Tube | 2012 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~35V | - | - | - | - | - | - | - | - | 1 | - | - | 9A | 1 | 35V | 4.5V | 10μA | Single | - | 9A | 60 ns | Non-Inverting | 60 ns | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDN609CI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIX4426NTRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC MOSFET DRIVER 1.5A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | 540.001716mg | Low-Side | 0.8V 2.4V | 60 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~30V | - | - | - | - | - | - | - | - | 2 | - | - | - | - | 35V | 4.5V | 4mA | - | - | 1.5A | - | Inverting | 60 ns | 10ns | 8 ns | 10ns 8ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 1.5A 1.5A | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IX4426NTR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDD630CIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE TO220-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 | - | TO-220-5 | 3.000003g | Low-Side | 0.8V 3.5V | 100 ns | -55°C~150°C TJ | Tube | 2014 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 12.5V~35V | - | - | - | - | - | - | - | - | 1 | - | 12.5V | 30A | 1 | 35V | 12.5V | 10μA | - | - | 30A | 65 ns | Non-Inverting | 100 ns | 11ns | 11 ns | 11ns 11ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDD630CI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI404SIAnlielectronics Тип | IXYS |
IC MOSFET DRVR LS 4A DUAL 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | 449.991981mg | Low-Side | 0.8V 2.5V | 39 ns | -55°C~150°C TJ | Tube | 2004 | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 2 | 18V | NOT SPECIFIED | IXD*404 | 8 | - | Not Qualified | - | 4A | - | - | - | - | - | 3mA | 4A | - | Inverting | 40 ns | 18ns | 17 ns | 16ns 13ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | 0.06 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | 0.059 μs | OVER CURRENT | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDI404SI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIX2113GAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR HALF-BRIDGE 14DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 14-DIP (0.300, 7.62mm) | 16 | 14-DIP | - | Half-Bridge | 6V 9.5V | - | -40°C~150°C TJ | Tube | 2014 | Active | 1 (Unlimited) | - | - | 150°C | -40°C | 10V~20V | - | - | - | - | - | - | - | - | - | - | - | 2A | 2 | - | - | - | - | - | - | - | Non-Inverting | - | - | - | 9.4ns 9.7ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | 600V | - | - | - | - | ROHS3 Compliant | - | ||
| IX2113G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIX4427NAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | 540.001716mg | Low-Side | 0.8V 2.4V | 60 ns | -55°C~150°C TJ | Tube | 2015 | Active | 1 (Unlimited) | - | - | 125°C | -40°C | 4.5V~30V | - | - | - | - | - | - | - | - | 2 | - | - | - | 2 | 35V | 4.5V | 4mA | - | - | 1.5A | - | Non-Inverting | 60 ns | 10ns | 8 ns | 10ns 8ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 1.5A 1.5A | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IX4427N |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ