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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Weight | Driver Configuration | Logic voltage-VIL, VIH | Turn Off Delay Time | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Outputs | Qualification Status | Max Output Current | Operating Supply Voltage | Power Supplies | Number of Channels | Max Supply Voltage | Min Supply Voltage | Operating Supply Current | Nominal Supply Current | Output Current | Propagation Delay | Input Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Output Peak Current Limit-Nom | Supply Voltage1-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | Built-in Protections | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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  | Mfr. ТипIXDD609D2TRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DFN
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | 8 | 8-DFN-EP (5x4) | 37.393021mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | Active | 1 (Unlimited) | - | - | - | 150°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9A | - | - | 1 | 35V | 4.5V | 10μA | - | - | 60 ns | Non-Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDD609D2TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIX6R11S6Anlielectronics Тип | IXYS |
IC BRIDGE DRIVER FOR N-CH MOSFET
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 18-SOIC (0.295, 7.50mm Width) | - | - | - | Half-Bridge | 6V 9.6V | - | -40°C~125°C TA | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 18 | EAR99 | - | - | - | 1.25W | 10V~35V | DUAL | GULL WING | NOT SPECIFIED | 1 | 15V | - | NOT SPECIFIED | IX6*11 | 18 | R-PDSO-G18 | - | Not Qualified | - | 35V | 15V | - | - | - | - | - | 6A | - | Non-Inverting | - | 35ns | 25 ns | 25ns 17ns | - | Independent | 2 | 0.16 μs | 6A | 15V | IGBT, N-Channel MOSFET | 6A 6A | YES | - | - | 600V | - | 11.54mm | 7.5mm | - | RoHS Compliant | Lead Free | ||
| IX6R11S6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDF402SIAAnlielectronics Тип | IXYS |
IC MOSFET DRIVER DUAL 2A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | 449.991981mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*402 | 8 | - | - | Not Qualified | 2A | - | 4.5/35V | - | - | - | - | 3mA | 2A | - | Inverting, Non-Inverting | - | 10ns | 9 ns | 8ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDF402SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD609SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
9-AMPERE LOW-SIDE ULTRAFAST MO
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9A | - | - | - | 35V | 4.5V | 10μA | - | - | 60 ns | Non-Inverting | 60 ns | 35ns | 25 ns | 22ns 15ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDD609SIATR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI404SIAAnlielectronics Тип | IXYS |
IC MOSFET DRVR DUAL 4A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | - | 449.991981mg | Low-Side | 0.8V 2.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | DUAL | GULL WING | 260 | 2 | 18V | - | 35 | IXD*404 | 8 | - | - | Not Qualified | 4A | - | - | - | - | - | - | 3mA | 4A | - | Inverting | - | 18ns | 17 ns | 16ns 13ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | 0.06 µs | 4A | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | 0.059 µs | - | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDI404SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI609SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
MOSFET DRVR 2A 1-OUT Lo Side Inv 8-Pin SOIC Tube
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | 75 ns | -55°C~150°C TJ | Tube | 2010 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 2A | - | - | 1 | 35V | 4.5V | 10μA | - | 2A | 30 ns | Inverting | 75 ns | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI609SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDF602PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 2A | - | - | 2 | 35V | 4.5V | - | - | - | 60 ns | Inverting, Non-Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDF602PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDF602SIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2012 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 2A | - | - | 2 | 35V | 4.5V | - | - | - | 60 ns | Inverting, Non-Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDF602SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDF604SIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2010 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 4A | - | - | 2 | 35V | 4.5V | 10μA | - | 4A | 40 ns | Inverting, Non-Inverting | - | 9ns | 8 ns | 9ns 8ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDF604SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDF404PIAnlielectronics Тип | IXYS |
IC MOSFET DRIVER LS 4A DUAL 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 2.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | Not Applicable | 8 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | DUAL | - | 260 | 2 | 18V | - | 35 | IXD*404 | 8 | - | - | Not Qualified | 4A | - | - | - | - | - | - | 3mA | 4A | - | Inverting, Non-Inverting | - | 18ns | 17 ns | 16ns 13ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | 0.06 µs | 4A | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | 0.059 µs | OVER CURRENT; THERMAL | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | Lead Free | ||
| IXDF404PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDF604SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2010 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 4A | - | - | 2 | 35V | 4.5V | 10μA | - | 4A | 40 ns | Inverting, Non-Inverting | 40 ns | 16ns | 14 ns | 9ns 8ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | - | - | - | - | - | - | No | ROHS3 Compliant | Lead Free | ||
| IXDF604SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDN409SIAnlielectronics Тип | IXYS |
IC MOSFET DRVR 9A LOSIDE 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | 449.991981mg | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*409 | 8 | R-PDSO-G8 | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | 9A | - | Non-Inverting | - | 15ns | 15 ns | 10ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.04 µs | 9A | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | 0.036 µs | - | - | - | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDN409SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI609PIAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | 8-DIP | 2.26799g | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 2A | - | - | 1 | 35V | 4.5V | 10μA | - | - | 30 ns | Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI609PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDF402PIAnlielectronics Тип | IXYS |
IC MOSFET DRIVER DUAL 2A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | DUAL | - | 260 | 2 | 18V | - | 35 | IXD*402 | 8 | - | - | Not Qualified | - | - | 4.5/35V | - | - | - | - | 3mA | 2A | 32 ns | Inverting, Non-Inverting | - | 10ns | 9 ns | 8ns 8ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | - | 2A | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | - | ||
| IXDF402PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипIXDN614CIAnlielectronics Тип | IXYS Integrated Circuits Division |
14-AMPERE LOW-SIDE ULTRAFAST M
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 11 Weeks | Through Hole | Through Hole | TO-220-5 Formed Leads | 5 | TO-220-5 | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 14A | - | - | 1 | 35V | 4.5V | - | - | - | 70 ns | Non-Inverting | - | 35ns | 25 ns | 25ns 18ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDN614CI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI604SIAAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tube | 2012 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 4A | - | - | 2 | 35V | 4.5V | 10μA | - | 4A | 40 ns | Inverting | - | 9ns | 8 ns | 9ns 8ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDI604SIA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI609SITRAnlielectronics Тип | IXYS Integrated Circuits Division |
Driver 9A 1-OUT Low Side Inv Automotive 8-Pin SOIC EP T/R
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 9A | - | - | - | 35V | 4.5V | 10μA | - | - | 60 ns | Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI609SITR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI602D2TRAnlielectronics Тип | IXYS Integrated Circuits Division |
2-AMPERE DUAL LOW-SIDE ULTRAFA
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-VDFN Exposed Pad | 8 | 8-DFN-EP (5x4) | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 2A | - | - | - | 35V | 4.5V | - | - | - | 60 ns | Inverting | - | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDI602D2TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDI409PIAnlielectronics Тип | IXYS |
IC MOSFET DRVR 9A LOSIDE 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | DUAL | - | 260 | 1 | 18V | 2.54mm | 35 | IXD*409 | 8 | - | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | 9A | - | Inverting | - | 15ns | 15 ns | 10ns 10ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | 0.04 µs | 9A | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | 0.036 µs | - | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | - | ||
| IXDI409PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипIXDD504PIAnlielectronics Тип | IXYS |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | - | 599.989307mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*504 | 8 | R-PDIP-T8 | - | Not Qualified | - | - | 4.5/30V | - | - | - | - | 20mA | - | - | Non-Inverting | - | 16ns | 14 ns | 9ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.6 µs | 4A | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.59 µs | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | - | ||
| IXDD504PI |
Индекс :
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