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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Factory Lead Time | Mount | Mounting Type | Package / Case | Number of Pins | Supplier Device Package | Weight | Driver Configuration | Logic voltage-VIL, VIH | Turn Off Delay Time | Operating Temperature | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Supply Voltage | Terminal Pitch | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Outputs | Qualification Status | Max Output Current | Operating Supply Voltage | Power Supplies | Number of Channels | Max Supply Voltage | Min Supply Voltage | Operating Supply Current | Nominal Supply Current | Power Dissipation | Output Current | Propagation Delay | Input Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Rise / Fall Time (Typ) | Interface IC Type | Channel Type | Number of Drivers | Turn On Time | Output Peak Current Limit-Nom | Gate Type | Current - Peak Output (Source, Sink) | High Side Driver | Turn Off Time | Built-in Protections | High Side Voltage - Max (Bootstrap) | Height Seated (Max) | Length | Width | Radiation Hardening | RoHS Status | Lead Free |
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![]() | Mfr. ТипIXDI504PIAnlielectronics Тип | IXYS |
IC GATE DRIVER DUAL 4A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*504 | 8 | - | - | Not Qualified | - | - | 4.5/30V | - | - | - | - | 10mA | - | - | 40 ns | Inverting | - | 16ns | 14 ns | 9ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.06 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.05 μs | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | - | ||
| IXDI504PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN504PIAnlielectronics Тип | IXYS |
IC GATE DRIVER DUAL 4A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | - | 599.989307mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*504 | 8 | R-PDIP-T8 | - | Not Qualified | - | - | 4.5/30V | - | - | - | - | 10mA | - | - | - | Non-Inverting | - | 16ns | 14 ns | 9ns 8ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.06 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | NO | 0.05 μs | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | - | ||
| IXDN504PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDS430SIAnlielectronics Тип | IXYS |
IC DRVR MOSF/IGBT 30A 28-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 28-SOIC (0.295, 7.50mm Width) | - | - | 449.991981mg | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Bulk | 2005 | - | Obsolete | 1 (Unlimited) | 28 | EAR99 | - | - | - | - | 8.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*430 | 28 | - | 2 | Not Qualified | - | 35V | - | - | - | - | - | 3mA | - | 30A | - | Inverting, Non-Inverting | - | 20ns | 18 ns | 18ns 16ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 1 | 0.045 µs | 30A | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | YES | 0.039 µs | - | - | - | - | 7.5mm | - | RoHS Compliant | Lead Free | ||
| IXDS430SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDF604SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -40°C~125°C TA | Tape & Reel (TR) | 2010 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 4A | - | - | - | 35V | 4.5V | 10μA | - | - | 4A | 50 ns | Inverting, Non-Inverting | 50 ns | 9ns | 8 ns | 9ns 8ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IXDF604SIATR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN404SI-16Anlielectronics Тип | IXYS |
IC MOSFET DRVR LS 4A DUAL 16SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 16-SOIC (0.295, 7.50mm Width) | 16 | - | 550.009098mg | Low-Side | 0.8V 2.5V | 39 ns | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 16 | EAR99 | - | - | - | - | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*404 | 16 | - | - | Not Qualified | 4A | - | - | - | - | - | - | 3mA | - | 4A | - | Non-Inverting | 40 ns | 18ns | 17 ns | 16ns 13ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | 0.06 μs | 4A | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | - | 0.059 μs | OVER CURRENT | - | - | 10.3mm | 7.5mm | - | RoHS Compliant | Contains Lead | ||
| IXDN404SI-16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIX21844NAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR HALF-BRIDGE 14SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 14-SOIC (0.154, 3.90mm Width) | - | 14-SOIC | - | Half-Bridge | 0.8V 2V | - | -40°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 150°C | -40°C | - | 10V~20V | - | - | - | - | - | - | - | - | - | - | - | - | 1.8A | - | - | 1 | - | - | - | - | - | - | - | Non-Inverting | - | - | - | 23ns 14ns | - | Synchronous | 2 | - | - | IGBT, N-Channel MOSFET | 1.4A 1.8A | - | - | - | 600V | - | - | - | - | ROHS3 Compliant | - | ||
| IX21844N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIX4426NAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | 540.001716mg | Low-Side | 0.8V 2.4V | 60 ns | -55°C~150°C TJ | Tube | 2015 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~30V | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | 2 | 35V | 4.5V | 4mA | - | - | 1.5A | - | Inverting | 60 ns | 10ns | 8 ns | 10ns 8ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 1.5A 1.5A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IX4426N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIX4428NAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | 8-SOIC | 540.001716mg | Low-Side | 0.8V 2.4V | 60 ns | -55°C~150°C TJ | Tube | 2001 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~30V | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | 2 | 35V | 4.5V | 4mA | - | - | 1.5A | - | Inverting, Non-Inverting | 60 ns | 10ns | 8 ns | 10ns 8ns | - | Independent | 2 | - | - | N-Channel, P-Channel MOSFET | 1.5A 1.5A | - | - | - | - | - | - | - | - | ROHS3 Compliant | - | ||
| IX4428N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI414PIAnlielectronics Тип | IXYS |
IC DRIVER MOSF/IGBT 14A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | 833mW | 4.5V~35V | DUAL | - | 260 | 1 | 18V | 2.54mm | 35 | IXD*414 | 8 | - | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | - | 14A | - | Inverting | - | 27ns | 25 ns | 22ns 20ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Single | 1 | 0.033 µs | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | 0.034 µs | - | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | - | ||
| IXDI414PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDI402SIAnlielectronics Тип | IXYS |
IC MOSFET DRIVER LS 2A 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | 449.991981mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 2 | 18V | - | NOT SPECIFIED | IXD*402 | 8 | R-PDSO-G8 | - | Not Qualified | 2A | - | 4.5/35V | - | - | - | - | 3mA | - | 2A | - | Inverting | - | 10ns | 9 ns | 8ns 8ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | - | 2A | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDI402SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD414SIAnlielectronics Тип | IXYS |
IC MOSFET DRVR 14A LOSIDE 14SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 14-SOIC (0.154, 3.90mm Width) | 14 | - | 449.991981mg | Low-Side | 0.8V 3.5V | 34 ns | -55°C~150°C TJ | Tube | 2004 | - | Obsolete | 1 (Unlimited) | 14 | EAR99 | - | - | - | 1W | 4.5V~35V | DUAL | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*414 | 14 | - | - | Not Qualified | 14A | - | - | - | - | - | - | 3mA | 1W | 14A | - | Non-Inverting | 33 ns | 29ns | 26 ns | 25ns 22ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Single | 1 | 33 μs | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | 34 μs | TRANSIENT; OVER CURRENT; OVER VOLTAGE | - | - | 8.65mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDD414SI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDI609SIATRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 540.001716mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 35V | 4.5V | 10μA | - | - | - | - | Inverting | - | 22ns | 15 ns | 22ns 15ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IXDI609SIATR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD509PIAnlielectronics Тип | IXYS |
IC GATE DRVR LOW-SIDE 8DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | - | - | 599.989307mg | Low-Side | 0.8V 2.4V | - | -55°C~150°C TJ | Tube | 2007 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | - | NOT SPECIFIED | 1 | 18V | 2.54mm | NOT SPECIFIED | IXD*509 | 8 | R-PDIP-T8 | - | Not Qualified | - | - | - | - | - | - | - | 75mA | - | - | - | Non-Inverting | - | 45ns | 40 ns | 25ns 23ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Single | 1 | - | 9A | IGBT, N-Channel, P-Channel MOSFET | 9A 9A | NO | - | - | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | - | ||
| IXDD509PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDD430MYIAnlielectronics Тип | IXYS |
IC DRVR MOSF/IGBT 30A TO263-5
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | - | - | 1.59999g | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Bulk | 2005 | - | Obsolete | 1 (Unlimited) | 5 | EAR99 | - | - | - | 2W | 8.5V~35V | - | GULL WING | NOT SPECIFIED | 1 | 18V | - | NOT SPECIFIED | IXD*430 | 4 | R-PSSO-G5 | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | - | 30A | - | Non-Inverting | - | 20ns | 18 ns | 18ns 16ns | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER | Single | 1 | 0.045 µs | 30A | IGBT, N-Channel, P-Channel MOSFET | 30A 30A | YES | 0.039 µs | - | - | 4.8mm | 9.975mm | - | - | RoHS Compliant | Lead Free | ||
| IXDD430MYI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI402PIAnlielectronics Тип | IXYS |
IC MOSFET DRVR DUAL 2A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | - | 4.5V~35V | DUAL | - | 260 | 2 | 18V | - | 35 | IXD*402 | 8 | - | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | - | 2A | - | Inverting | - | 10ns | 9 ns | 8ns 8ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Independent | 2 | - | 2A | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | 4.57mm | 9.59mm | - | - | RoHS Compliant | - | ||
| IXDI402PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN414PIAnlielectronics Тип | IXYS |
IC DRIVER MOSF/IGBT 14A 8-DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Through Hole | Through Hole | 8-DIP (0.300, 7.62mm) | 8 | - | 599.989307mg | Low-Side | 0.8V 3.5V | - | -55°C~150°C TJ | Tube | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | - | - | 833mW | 4.5V~35V | DUAL | - | 260 | 1 | 18V | 2.54mm | 35 | IXD*414 | 8 | - | - | Not Qualified | - | 35V | - | - | - | - | - | 3mA | - | 14A | - | Non-Inverting | - | 27ns | 25 ns | 22ns 20ns | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | Single | 1 | 0.033 µs | 14A | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | 0.034 µs | - | - | 4.57mm | 9.59mm | 7.62mm | - | RoHS Compliant | Lead Free | ||
| IXDN414PI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDN602SITRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 2 | - | 2A | - | - | - | 35V | 4.5V | - | - | - | - | 60 ns | Non-Inverting | 60 ns | 15ns | 15 ns | 7.5ns 6.5ns | - | Independent | 2 | - | - | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDN602SITR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIX21844GAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR HALF-BRIDGE 14DIP
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 9 Weeks | Through Hole | Through Hole | 14-DIP (0.300, 7.62mm) | - | 14-DIP | - | Half-Bridge | 0.8V 2V | - | -40°C~150°C TJ | Tube | 2014 | - | Active | 1 (Unlimited) | - | - | - | 150°C | -40°C | - | 10V~20V | - | - | - | - | - | - | - | - | - | - | - | - | 1.8A | - | - | 1 | - | - | - | - | - | - | - | Non-Inverting | - | - | - | 23ns 14ns | - | Synchronous | 2 | - | - | IGBT, N-Channel MOSFET | 1.4A 1.8A | - | - | - | 600V | - | - | - | - | ROHS3 Compliant | - | ||
| IX21844G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипIXDI614SITRAnlielectronics Тип | IXYS Integrated Circuits Division |
IC GATE DRVR LOW-SIDE 8SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | 8 Weeks | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8 | 8-SOIC-EP | - | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | - | Active | 1 (Unlimited) | - | - | - | 125°C | -40°C | - | 4.5V~35V | - | - | - | - | - | - | - | - | - | - | 1 | - | 14A | - | - | - | 35V | 4.5V | - | - | - | - | 70 ns | Inverting | 70 ns | 35ns | 25 ns | 25ns 18ns | - | Single | 1 | - | - | IGBT, N-Channel, P-Channel MOSFET | 14A 14A | - | - | - | - | - | - | - | No | ROHS3 Compliant | - | ||
| IXDI614SITR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Mfr. ТипIXDN502SIAAnlielectronics Тип | IXYS |
IC GATE DRIVER DUAL 2A 8-SOIC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | - | - | 449.991981mg | Low-Side | 0.8V 3V | - | -55°C~150°C TJ | Tube | 2010 | - | Obsolete | 1 (Unlimited) | 8 | EAR99 | - | - | - | - | 4.5V~30V | DUAL | GULL WING | NOT SPECIFIED | 2 | 15V | - | NOT SPECIFIED | IXD*502 | 8 | R-PDSO-G8 | - | Not Qualified | 2A | 15V | 4.5/30V | - | - | - | - | 3mA | - | - | - | Non-Inverting | - | 10ns | 9 ns | 7.5ns 6.5ns | BUFFER OR INVERTER BASED MOSFET DRIVER | Independent | 2 | 0.04 μs | 2A | IGBT, N-Channel, P-Channel MOSFET | 2A 2A | NO | 0.038 μs | - | - | 1.75mm | 4.9mm | 3.9mm | - | RoHS Compliant | Lead Free | ||
| IXDN502SIA |
Индекс :
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