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Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Memory IC Type | Mixed Memory Type | Length | Width |
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Mfr. ТипS71PL129JC0BFW9U0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | EAR99 | TIN SILVER COPPER | PSEUDO STATIC RAM IS ORGANIZED AS 4M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71PL129JC0BFW9U0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71NS256PB0ZJETV3Anlielectronics Тип | Spansion |
Description: Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 9.20 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | SPANSION INC | - | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 9.2 mm | 8 mm | |||
S71NS256PB0ZJETV3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71PL129JC0BFW9B0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | EAR99 | TIN SILVER COPPER | PSEUDO STATIC RAM IS ORGANIZED AS 4M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71PL129JC0BFW9B0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71PL127JB0BAWQB0Anlielectronics Тип | Spansion |
Description: Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE COMPLIANT, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | - | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | 3 V | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71PL127JB0BAWQB0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71GL032NA0BFW0U0Anlielectronics Тип | Spansion |
Memory Circuit, 2MX16, CMOS, PBGA56, 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | SPANSION INC | 3 | 2097152 words | 2000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 1M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 56 | R-PBGA-B56 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 2MX16 | 1.2 mm | 16 | - | 33554432 bit | MEMORY CIRCUIT | - | 9 mm | 7 mm | |||
S71GL032NA0BFW0U0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71PL256ND0HFW5B0Anlielectronics Тип | Spansion |
Memory Circuit, Flash+PSRAM, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 70 ns | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | EAR99 | TIN SILVER COPPER | - | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | |||
S71PL256ND0HFW5B0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71PL129NB0HFW4B0Anlielectronics Тип | Spansion |
Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 70 ns | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-64 | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | EAR99 | TIN SILVER COPPER | - | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | |||
S71PL129NB0HFW4B0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71VS256RD0AHKBL0Anlielectronics Тип | Spansion |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | SPANSION INC | - | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA56,10X14,20 | BGA56,10X14,20 | RECTANGULAR | GRID ARRAY, FINE PITCH | Transferred | - | Yes | 1.8 V | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | 260 | - | 0.5 mm | unknown | 40 | - | R-PBGA-B56 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | |||
S71VS256RD0AHKBL0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71WS256NC0BFWAMAnlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | - | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | PSRAM IS ALSO ORGANIZED AS 4M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71WS256NC0BFWAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS72NS512PD0AHGL43Anlielectronics Тип | Spansion |
Description: Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | SPANSION INC | - | - | - | - | - | - | - | , | - | - | - | Obsolete | - | Yes | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | 260 | - | - | unknown | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
S72NS512PD0AHGL43 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71VS064RB0AHT0L0Anlielectronics Тип | Spansion |
Memory Circuit, Flash+PSRAM, CMOS
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 52 | - | SPANSION INC | - | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | - | , BGA52,6X10,20 | BGA52,6X10,20 | - | - | Obsolete | - | Yes | 1.8 V | - | EAR99 | - | - | 8542.32.00.71 | - | - | 260 | - | - | unknown | 40 | - | - | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | |||
S71VS064RB0AHT0L0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71VS256RD0ZHEC00Anlielectronics Тип | Spansion |
Description: Memory Circuit, 16X16, CMOS, PBGA56, 9.20 X 8 MM, 0.50 MM PITCH, LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | SPANSION INC | - | 16 words | 16 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 9.20 X 8 MM, 0.50 MM PITCH, LEAD FREE, VFBGA-56 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | - | EAR99 | - | PSRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | compliant | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16X16 | 1.2 mm | 16 | - | 256 bit | MEMORY CIRCUIT | - | 9.2 mm | 8 mm | |||
S71VS256RD0ZHEC00 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71JL064H80BAW110Anlielectronics Тип | Spansion |
Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | - | SPANSION INC | 3 | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | e0 | EAR99 | TIN LEAD | PSEUDO STATIC RAM IS ORGANIZED AS 512K X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 73 | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 4MX16 | 1.4 mm | 16 | - | 67108864 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71JL064H80BAW110 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71PL129JB0BAW9Z0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | SPANSION INC | - | 8388608 words | 8000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | e0 | EAR99 | TIN LEAD | PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 64 | R-PBGA-B64 | Not Qualified | 3.1 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | 134217728 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71PL129JB0BAW9Z0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71WS256NC0BFWAP0Anlielectronics Тип | Spansion |
Memory Circuit, Flash+PSRAM, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 80 ns | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.054 mA | 16MX16 | 1.2 mm | 16 | 0.00007 A | 268435456 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | |||
S71WS256NC0BFWAP0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71WS256NC0BFWAP2Anlielectronics Тип | Spansion |
Description: Memory Circuit, Flash+PSRAM, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 80 ns | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 40 | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.054 mA | 16MX16 | 1.2 mm | 16 | 0.00007 A | 268435456 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | |||
S71WS256NC0BFWAP2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71GL064NA0BHW0F0Anlielectronics Тип | Spansion |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | SPANSION INC | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | Yes | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | 260 | - | - | unknown | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
S71GL064NA0BHW0F0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS72WS256NEEBFWUB0Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-137
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 137 | - | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | MOBILE SDRAM IS ORGANIZED AS 4M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 40 | 137 | R-PBGA-B137 | Not Qualified | 1.95 V | OTHER | 1.7 V | ASYNCHRONOUS | - | 16MX16 | 1.4 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 12 mm | 9 mm | |||
S72WS256NEEBFWUB0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71VS256RD0ZHE400Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA56, 9.20 X 8 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | SPANSION INC | - | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | - | EAR99 | - | PSRAM IS ORGANIZED AS 8M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 9.2 mm | 8 mm | |||
S71VS256RD0ZHE400 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
Mfr. ТипS71WS256NC0BFWAPAnlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | - | SPANSION INC | 3 | 16777216 words | 16000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | EAR99 | TIN SILVER COPPER | PSRAM IS ALSO ORGANIZED AS 4M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | 268435456 bit | MEMORY CIRCUIT | - | 11.6 mm | 8 mm | |||
S71WS256NC0BFWAP |
Индекс :
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