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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Ihs Manufacturer | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | ECCN Code | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Memory IC Type | Mixed Memory Type | Length | Width |
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![]() | Mfr. ТипS71WS256NC0BFWAP0Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, CMOS, PBGA84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 80 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA84,10X12,32 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | 1.8 V | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B84 | Not Qualified | - | OTHER | - | - | 0.066 mA | - | - | - | 0.00004 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71WS256NC0BFWAP0 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71GL512NC0BFWEZ2Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, CMOS, PBGA84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 110 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA84,10X12,32 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | - | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B84 | Not Qualified | - | OTHER | - | - | 0.09 mA | - | - | - | 0.005 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71GL512NC0BFWEZ2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71JL064H80BAW110Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA73, 11.60 X 8 MM, FBGA-73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | ADVANCED MICRO DEVICES INC | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | 11.60 X 8 MM, FBGA-73 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Transferred | BGA | Yes | 3 V | EAR99 | PSRAM IS ORGANIZED AS 512K X 16; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | 73 | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.045 mA | 4MX16 | 1.4 mm | 16 | - | 67108864 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | ||
| S71JL064H80BAW110 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипTH50VSF3580AASBAnlielectronics Тип | AMD |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TH50VSF3580AASB | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипAM2764AAnlielectronics Тип | AMD |
Memory IC
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | ADVANCED MICRO DEVICES INC | - | - | - | - | - | - | , | - | - | - | Obsolete | - | - | - | EAR99 | - | 8542.32.00.71 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| AM2764A | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71JL064HB0BAW01Anlielectronics Тип | AMD |
Memory Circuit, Flash+SRAM, CMOS, PBGA73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 3 V | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B73 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SRAM | - | - | ||
| S71JL064HB0BAW01 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71JL064HA0BAW01Anlielectronics Тип | AMD |
Description: Memory Circuit, Flash+SRAM, CMOS, PBGA73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | ADVANCED MICRO DEVICES INC | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | - | Yes | 3 V | EAR99 | SRAM IS ORGANISED AS 1KX16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | - | 4MX16 | 1.4 mm | 16 | - | 67108864 bit | MEMORY CIRCUIT | FLASH+SRAM | 11.6 mm | 8 mm | ||
| S71JL064HA0BAW01 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL032J80BAW070Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, CMOS, PBGA56,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | 70 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA56,8X8,32 | BGA56,8X8,32 | SQUARE | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 3 V | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | S-PBGA-B56 | Not Qualified | - | OTHER | - | - | 0.07 mA | - | - | - | 0.000005 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71PL032J80BAW070 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS72WS256NEEBFWUB0Anlielectronics Тип | AMD |
Memory Circuit, Flash+SDRAM, CMOS, PBGA137
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 137 | 70 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA137,10X14,32 | BGA137,10X14,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | 1.8 V | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B137 | Not Qualified | - | OTHER | - | - | 0.06 mA | - | - | - | 0.00004 A | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | ||
| S72WS256NEEBFWUB0 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL129JB0BAW9Z0Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, CMOS, PBGA64,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 70 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA64,10X12,32 | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | - | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B64 | Not Qualified | - | OTHER | - | - | 0.07 mA | - | - | - | 0.000005 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71PL129JB0BAW9Z0 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71JL064H80BAW010Anlielectronics Тип | AMD |
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA73, 11.60 X 8 MM, FBGA-73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | ADVANCED MICRO DEVICES INC | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Transferred | BGA | Yes | 3 V | EAR99 | SRAM IS ORGANIZED AS 512K X 16 / 1M X 8; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | 73 | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.045 mA | 4MX16 | 1.4 mm | 16 | - | 67108864 bit | MEMORY CIRCUIT | FLASH+SRAM | 11.6 mm | 8 mm | ||
| S71JL064H80BAW010 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71JL064HA0BAW110Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA73, 11.60 X 8 MM, FBGA-73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | ADVANCED MICRO DEVICES INC | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Transferred | BGA | Yes | 3 V | EAR99 | PSRAM IS ORGANIZED AS 1M X 16; FLASH CAN ALSO BE ORGANIZED AS 8M X 8 | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | NOT SPECIFIED | 73 | R-PBGA-B73 | Not Qualified | 3.3 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.045 mA | 4MX16 | 1.4 mm | 16 | - | 67108864 bit | MEMORY CIRCUIT | FLASH+PSRAM | 11.6 mm | 8 mm | ||
| S71JL064HA0BAW110 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71PL129JC0BFW9U0Anlielectronics Тип | AMD |
Description: Memory Circuit, Flash+PSRAM, CMOS, PBGA64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | 70 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA64,10X12,32 | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | - | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B64 | Not Qualified | - | OTHER | - | - | 0.07 mA | - | - | - | 0.000005 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71PL129JC0BFW9U0 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71WS256NC0BFWAP2Anlielectronics Тип | AMD |
Memory Circuit, Flash+PSRAM, CMOS, PBGA84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | 80 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA84,10X12,32 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | Yes | 1.8 V | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | R-PBGA-B84 | Not Qualified | - | OTHER | - | - | 0.066 mA | - | - | - | 0.00004 A | - | MEMORY CIRCUIT | FLASH+PSRAM | - | - | ||
| S71WS256NC0BFWAP2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. ТипS71GL064A08BFW0B0Anlielectronics Тип | AMD |
Memory Circuit, Flash+SRAM, CMOS, PBGA56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | 100 ns | ADVANCED MICRO DEVICES INC | - | - | 85 °C | -25 °C | PLASTIC/EPOXY | FBGA | FBGA, BGA56,8X8,32 | BGA56,8X8,32 | SQUARE | GRID ARRAY, FINE PITCH | Active | - | Yes | - | EAR99 | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | S-PBGA-B56 | Not Qualified | - | OTHER | - | - | 0.06 mA | - | - | - | 0.000005 A | - | MEMORY CIRCUIT | FLASH+SRAM | - | - | ||
| S71GL064A08BFW0B0 |
Индекс :
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