- Все продукты
- /
- Memory Cards, Modules
- /
- Specialized
| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Date Of Intro | Dimensions | DTR | ECC | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Voltage | Operating Mode | Supply Current-Max | Organization | Seated Height-Max | Memory Width | Density | Standby Current-Max | Memory Density | Memory IC Type | Mixed Memory Type | Temperature | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. ТипS72NS512RD0AHGL43Anlielectronics Тип | Spansion |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| S72NS512RD0AHGL43 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS71JL064HB0BAW01Anlielectronics Тип | AMD |
Memory Circuit, Flash SRAM, CMOS, PBGA73
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 73 | 70 ns | - | - | - | - | ADVANCED MICRO DEVICES INC | - | - | - | 85 °C | -25 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA73,10X12,32 | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 3 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | - | R-PBGA-B73 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SRAM | - | - | - | ||
| S71JL064HB0BAW01 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипSST34WA1601-70-5E-MVJEAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, 1MX16, CMOS, PBGA44, 6 X 8 MM, 0.92 MM HEIGHT, 0.30 MM BALL, ROHS COMPLIANT, MO-225, VFBGA-44
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 44 | - | - | - | - | - | SILICON STORAGE TECHNOLOGY INC | - | 1048576 words | 1000000 | 85 °C | -20 °C | - | PLASTIC/EPOXY | VFBGA | VFBGA, | - | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Transferred | BGA | Yes | 1.8 V | - | - | EAR99 | - | ZERO DENSITY PSRAM | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | - | 40 | 44 | R-PBGA-B44 | Not Qualified | 1.95 V | OTHER | 1.7 V | - | SYNCHRONOUS | - | 1MX16 | 1 mm | 16 | - | - | 16777216 bit | MEMORY CIRCUIT | - | - | 8 mm | 6 mm | ||
| SST34WA1601-70-5E-MVJE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипXC17S20PDG8CAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 178144X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | - | - | - | - | XILINX INC | 1 | 178144 words | 178144 | 70 °C | - | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | - | 30 | 8 | R-PDIP-T8 | Not Qualified | 5.25 V | COMMERCIAL | 4.75 V | - | SYNCHRONOUS | - | 178144X1 | 4.5974 mm | 1 | - | - | 178144 bit | MEMORY CIRCUIT | - | - | 9.3599 mm | 7.62 mm | ||
| XC17S20PDG8C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST32HF3242C-70-4E-LFSAnlielectronics Тип | Silicon Storage Technology |
Description: Memory Circuit, 2MX16, CMOS, PBGA63, 8 X 10 MM, 1.40 MM HEIGHT, MO-210, LFBGA-63
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 63 | - | - | - | - | - | SILICON STORAGE TECHNOLOGY INC | - | 2097152 words | 2000000 | 85 °C | -20 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | - | - | EAR99 | - | SRAM IS ORGANIZED AS 256K X 16 | 8542.32.00.71 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | - | NOT SPECIFIED | 63 | R-PBGA-B63 | Not Qualified | 3.3 V | OTHER | 2.7 V | - | ASYNCHRONOUS | - | 2MX16 | 1.4 mm | 16 | - | - | 33554432 bit | MEMORY CIRCUIT | - | - | 10 mm | 8 mm | ||
| SST32HF3242C-70-4E-LFS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипXC17S150XLPDG8CAnlielectronics Тип | AMD Xilinx |
Description: Memory Circuit, 1040128X1, CMOS, PDIP8, PLASTIC, DIP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | 8 | - | - | - | - | - | XILINX INC | 1 | 1040128 words | 1040128 | 70 °C | - | - | PLASTIC/EPOXY | DIP | DIP, | - | RECTANGULAR | IN-LINE | Obsolete | DIP | Yes | 3.3 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | THROUGH-HOLE | 250 | 1 | 2.54 mm | compliant | - | 30 | 8 | R-PDIP-T8 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | SYNCHRONOUS | - | 1040128X1 | 4.5974 mm | 1 | - | - | 1040128 bit | MEMORY CIRCUIT | - | - | 9.3599 mm | 7.62 mm | ||
| XC17S150XLPDG8C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSST32VF802-70-4C-TBKAnlielectronics Тип | Silicon Storage Technology |
Memory Circuit, Flash SRAM, Hybrid, PBGA48
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | - | - | - | SILICON STORAGE TECHNOLOGY INC | - | - | - | 70 °C | - | - | PLASTIC/EPOXY | BGA | BGA, BGA48,6X8,40 | BGA48,6X8,40 | RECTANGULAR | GRID ARRAY | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 1 mm | unknown | - | - | - | R-PBGA-B48 | Not Qualified | - | COMMERCIAL | - | - | - | 0.045 mA | - | - | - | - | 0.00003 A | - | MEMORY CIRCUIT | FLASH+SRAM | - | - | - | ||
| SST32VF802-70-4C-TBK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSAA5051Anlielectronics Тип | Philips Semiconductors |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SAA5051 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипS71NS256PB0ZJETV0Anlielectronics Тип | Spansion |
Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 9.20 MM, 1.20 MM HEIGHT, LEAD FREE, VFBGA-56
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 56 | - | - | - | - | - | SPANSION INC | - | 16777216 words | 16000000 | 85 °C | -25 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | - | - | EAR99 | - | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.5 mm | unknown | - | 40 | 56 | R-PBGA-B56 | Not Qualified | 1.95 V | OTHER | 1.7 V | - | SYNCHRONOUS | - | 16MX16 | 1.2 mm | 16 | - | - | 268435456 bit | MEMORY CIRCUIT | - | - | 9.2 mm | 8 mm | ||
| S71NS256PB0ZJETV0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNAND98W3M1AZBC5EAnlielectronics Тип | Micron Technology Inc |
Description: Memory Circuit, Flash SDRAM, PBGA137
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 137 | - | - | - | - | - | MICRON TECHNOLOGY INC | - | - | - | 85 °C | -30 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA137,10X15,32 | BGA137,10X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 3 V | - | - | EAR99 | - | - | 8542.32.00.71 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | - | - | R-PBGA-B137 | Not Qualified | - | OTHER | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | FLASH+SDRAM | - | - | - | ||
| NAND98W3M1AZBC5E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS71WS128NC0BFWA70Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA84, 11.60 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 84 | - | - | - | - | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | - | PLASTIC/EPOXY | TFBGA | 11.60 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84 | BGA84,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | - | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 4M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | 8542.32.00.71 | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | - | 40 | 84 | R-PBGA-B84 | Not Qualified | 1.95 V | OTHER | 1.7 V | - | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | - | 134217728 bit | MEMORY CIRCUIT | FLASH+PSRAM | - | 11.6 mm | 8 mm | ||
| S71WS128NC0BFWA70 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипM4-4102S-Z3Anlielectronics Тип | Moujen Switch |
-
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| M4-4102S-Z3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипSSDSC2BA800G401Anlielectronics Тип | Intel Corporation |
Memory Circuit,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | 2018-07-27 | - | - | - | INTEL CORP | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | - | ||
| SSDSC2BA800G401 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипS71PL127JB0BFWQB0Anlielectronics Тип | Spansion |
Memory Circuit, 8MX16, CMOS, PBGA64, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 64 | - | - | - | - | - | SPANSION INC | 3 | 8388608 words | 8000000 | 85 °C | -25 °C | - | PLASTIC/EPOXY | TFBGA | 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-64 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 3 V | e1 | - | EAR99 | TIN SILVER COPPER | PSRAM IS ORGANIZED AS 2M X 16 | 8542.32.00.71 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | 64 | R-PBGA-B64 | Not Qualified | 3.6 V | OTHER | 2.7 V | - | ASYNCHRONOUS | - | 8MX16 | 1.2 mm | 16 | - | - | 134217728 bit | MEMORY CIRCUIT | - | - | 11.6 mm | 8 mm | ||
| S71PL127JB0BFWQB0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипXC17S10VOG8IAnlielectronics Тип | AMD Xilinx |
Memory Circuit, 95008X1, CMOS, PDSO8, PLASTIC, TSOP-8
Сборник данных
Сравнение
| Min.:1 Mult.:1 | YES | 8 | - | - | - | - | - | XILINX INC | 3 | 95008 words | 95008 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | Yes | 5 V | e3 | Yes | EAR99 | Matte Tin (Sn) | - | 8542.32.00.71 | DUAL | GULL WING | 260 | 1 | 1.27 mm | compliant | - | 30 | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | SYNCHRONOUS | - | 95008X1 | 1.2 mm | 1 | - | - | 95008 bit | MEMORY CIRCUIT | - | - | 4.9 mm | 3.9 mm | ||
| XC17S10VOG8I | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. ТипNM1484KSLAXAJ-3BAnlielectronics Тип | Nanya Technology Corporation |
Memory Circuit,
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | NANYA TECHNOLOGY CORP | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | EAR99 | - | - | 8542.32.00.71 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MEMORY CIRCUIT | - | - | - | - | ||
| NM1484KSLAXAJ-3B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипW25N01GWZEIGAnlielectronics Тип | Winbond |
"1Gb QspiNAND Flash 104MHz SON8"
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 8X6mm2 | - | - | - | - | - | - | - | - | SON - 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 104MHz | - | - | - | - | - | - | - | 1.7 ~ 1.95V | - | - | - | - | - | 1Gb | - | - | - | - | -40~+85˚C | - | - | ||
| W25N01GWZEIG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипW25N01JWZEIGAnlielectronics Тип | Winbond |
"1Gb High Performance QspiNAND Flash STR166 \/ DTR80MHz SON8"
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 8X6mm2 | DTR | ECC | - | - | - | - | - | - | SON - 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | STR166 / DTR80MHz | - | - | - | - | - | - | - | 1.7 ~ 1.95V | - | - | - | - | - | 1Gb | - | - | - | - | -40~+85˚C | - | - | ||
| W25N01JWZEIG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипW25N01JWZEITAnlielectronics Тип | Winbond |
"1Gb High Performance QspiNAND Flash STR166 \/ DTR80MHz SON8"
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 8X6mm2 | - | - | - | - | - | - | - | - | SON - 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | STR166 / DTR80MHz | - | - | - | - | - | - | - | 1.7 ~ 1.95V | - | - | - | - | - | 1Gb | - | - | - | - | -40~+85˚C | - | - | ||
| W25N01JWZEIT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. ТипW25N04KVZEIRAnlielectronics Тип | Winbond |
"4Gb QspiNAND Flash 104MHz SON8"
Сборник данных
Сравнение
| Min.:1 Mult.:1 | - | - | - | - | 8X6mm2 | - | - | - | - | - | - | - | - | SON - 8 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 104MHz | - | - | - | - | - | - | - | 2.7 ~ 3.6V | - | - | - | - | - | 4Gb | - | - | - | - | -40~+85˚C | - | - | ||
| W25N04KVZEIR |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ