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| Изображение | Тип | Марка | Объяснение | Установленная цена | Количество | RoHS | Surface Mount | Mounting Feature | Shape | Semiconductor Material | Ihs Manufacturer | Operating Temperature-Max | Operating Temperature-Min | Output Power-Nom | Part Life Cycle Code | Number of Functions | Reach Compliance Code | Configuration | Optoelectronic Device Type | Forward Current-Max | Forward Voltage-Max | Peak Wavelength | Threshold Current-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. ТипDL-7140-201PAnlielectronics Тип | onsemi |
LASER DIODE,783NM PEAK WAVELENGTH,CAN-5.6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | - | ON SEMICONDUCTOR | 60 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | 0.14 A | - | 783 nm | - | ||
| DL-7140-201P | |||||||||||||||||||||||
![]() | Mfr. ТипDL-3149-057Anlielectronics Тип | onsemi |
LASER DIODE W/MONITOR,670NM PEAK WAVELENGTH,CAN-5.6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | - | ON SEMICONDUCTOR | 60 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | 0.045 A | 2.6 V | 670 nm | - | ||
| DL-3149-057 | |||||||||||||||||||||||
![]() | Mfr. ТипDL-3144-008SAnlielectronics Тип | onsemi |
LASER DIODE W/MONITOR,785NM PEAK WAVELENGTH,CAN-5.6
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | GaAs | ON SEMICONDUCTOR | 60 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | 0.055 A | - | 785 nm | - | ||
| DL-3144-008S | |||||||||||||||||||||||
![]() | Mfr. ТипDL-3149-054Anlielectronics Тип | onsemi |
LASER DIODE,680NM PEAK WAVELENGTH,TO-18VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | AlGaInP | ON SEMICONDUCTOR | 60 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | - | - | 680 nm | - | ||
| DL-3149-054 | |||||||||||||||||||||||
![]() | Mfr. ТипDL-4146-101SAnlielectronics Тип | onsemi |
Laser Diode
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | ROUND | - | ON SEMICONDUCTOR | 75 °C | - | 10 mW | Active | 1 | compliant | COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE | LASER DIODE | - | - | 405 nm | 50 mA | ||
| DL-4146-101S | |||||||||||||||||||||||
![]() | Mfr. ТипDL-3039-011Anlielectronics Тип | onsemi |
LASER DIODE,680NM PEAK WAVELENGTH,TO-18VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | AlGaInP | ON SEMICONDUCTOR | 60 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | - | - | 680 nm | - | ||
| DL-3039-011 | |||||||||||||||||||||||
![]() | Mfr. ТипDL-3149-056Anlielectronics Тип | onsemi |
LASER DIODE,685NM PEAK WAVELENGTH,TO-18VAR
Сборник данных
Сравнение
| Min.:1 Mult.:1 | NO | THROUGH HOLE MOUNT | - | AlGaInP | ON SEMICONDUCTOR | 50 °C | -10 °C | - | Active | - | compliant | - | LASER DIODE | - | - | 685 nm | - | ||
| DL-3149-056 |
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