P2H7M440L
Mult. :
Соответствующие детали

PD10M441H
KYOCERA Corporation
Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M440H
KYOCERA Corporation
Description: Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H7M440H
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H7M441L
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2HM505HA
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD7M441H
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD7M441L
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H4M440L
KYOCERA Corporation
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD4M440L
KYOCERA Corporation
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H4M441L
KYOCERA Corporation
Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2HM1102H
KYOCERA Corporation
Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD7M440H
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PDM755HA
KYOCERA Corporation
Power Field-Effect Transistor, 53A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M441L
KYOCERA Corporation
Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PDM5001
KYOCERA Corporation
Power Field-Effect Transistor, 390A I(D), 100V, 0.00056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD4M441H
KYOCERA Corporation
Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

P2H10M440H
KYOCERA Corporation
Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PDM1405HA
KYOCERA Corporation
Description: Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

P2H4M440H
KYOCERA Corporation
Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Другие включают "P2H7M" Детали

P2H7M440H
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H7M441L
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H7M441H
KYOCERA Corporation
Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H7M440L
KYOCERA Corporation
Description: Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8