PD10M441H

KYOCERA Corporation

Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H7M440H

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H7M441L

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2HM505HA

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD7M441H

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD7M441L

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 450V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H4M440L

KYOCERA Corporation

Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD4M440L

KYOCERA Corporation

Power Field-Effect Transistor, 21A I(D), 500V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H4M441L

KYOCERA Corporation

Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2HM1102H

KYOCERA Corporation

Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD7M440H

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

P2H7M440L

KYOCERA Corporation

Description: Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PDM755HA

KYOCERA Corporation

Power Field-Effect Transistor, 53A I(D), 500V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M441L

KYOCERA Corporation

Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PDM5001

KYOCERA Corporation

Power Field-Effect Transistor, 390A I(D), 100V, 0.00056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD4M441H

KYOCERA Corporation

Power Field-Effect Transistor, 21A I(D), 450V, 0.21ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

P2H10M440H

KYOCERA Corporation

Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

P2H10M440L

KYOCERA Corporation

Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

PD7M440L

KYOCERA Corporation

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M440H

KYOCERA Corporation

Description: Power Field-Effect Transistor, 60A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M441H

KYOCERA Corporation

Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7

PD10M441L

KYOCERA Corporation

Power Field-Effect Transistor, 50A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7