FPD1500SOT89

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

SP2030

RF Micro Devices Inc

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

SLD3091FZ

RF Micro Devices Inc

Description: Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, CERAMIC, LDMOS-3

FPD7612

RF Micro Devices Inc

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

FPD3000SOT89

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

FPD750SOT343E

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4

FPD2250SOT89

RF Micro Devices Inc

Description: RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

RF7846TR13

RF Micro Devices Inc

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SPF-2086

RF Micro Devices Inc

Description: RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

SPF-2000

RF Micro Devices Inc

Description: RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

FPD1050

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

SLD-1026Z

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOF-26, 6 PIN

FPD200P70

RF Micro Devices Inc

Description: RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-4

SHF-1000

RF Micro Devices Inc

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC PACKAGE-6

FPD2250SOT89CESR

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PACKAGE-3

FPD3000

RF Micro Devices Inc

Description: RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE

FPD3000SOT89

RF Micro Devices Inc

RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN