FLM1414-12F

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLM1213-4F

FUJITSU Semiconductor Limited

Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FHC40LG

FUJITSU Semiconductor Limited

RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

FLM5964-8F

FUJITSU Semiconductor Limited

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLM4450-18F

FUJITSU Semiconductor Limited

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLL600IQ-3

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

FLL200IB-2

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLM3439-4F

FUJITSU Semiconductor Limited

C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

FLM1314-3F

FUJITSU Limited

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN

FHX14LP

FUJITSU Limited

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

FLM1314-8F

FUJITSU Limited

Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN

FLL400IP-2

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

FT6112D

FUJITSU Semiconductor Limited

Description: Power Field-Effect Transistor, 4.5A I(D), 120V, 0.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, RM-65, 12 PIN

FLM1314-12F

FUJITSU Semiconductor Limited

KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

FLK027WG

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLM1213-6F

FUJITSU Semiconductor Limited

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLC091WF

FUJITSU Limited

Description: Transistor

FLM4450-8F

FUJITSU Limited

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

FHX45X

FUJITSU Limited

Description: RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4

FLM5964-6F

FUJITSU Semiconductor Limited

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

FLM5964-8F

FUJITSU Semiconductor Limited

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2