RB751S-40
Mult. :
Соответствующие детали

US3D
Galaxy Semi-Conductor Co Ltd
Rectifier Diode, 1 Element, 3A, 200V V(RRM),

R4000F
Galaxy Microelectronics
Fast Recovery Rectifier, VRRM MAX (V): 4000V; IAV MAX (A): 0.2A; VFM MAX (V): 6.5V; @ IF (A): 0.2A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 4000V; TRR MAX (NS): 500ns; Package: DO-15

BAV70T
Galaxy Semi-Conductor Co Ltd
Rectifier Diode,

BAV199
Galaxy Semi-Conductor Co Ltd
Rectifier Diode,

RB521S-30
Galaxy Microelectronics
Description: Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2; VFM Max (V): 0.5V; @ IF (A): 0.2A; IR Max (uA): 30uA; @VR (V): 10V; Pin: F1; Package: SOD-523

SS510A
Galaxy Semi-Conductor Co Ltd
Rectifier Diode,

D25XB80
Galaxy Microelectronics
Description: Bridge Rectifier Diode, 25A, 800V V(RRM),

RB160M-30
Galaxy Microelectronics
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, SOD-123, 2 PIN

MUR1060
Galaxy Microelectronics
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 10A; VFM MAX (V): 1.5V; @ IF (A): 10A; IFSM MAX (A): 125A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 50ns; Package: TO-220AC

MBRD10150CTG
Galaxy Microelectronics
Rectifier Diode,

BAS40WS
Galaxy Microelectronics
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 0.2A; VFM Max (V): 0.5V; @ IF (A): 0.01A; IR Max (uA): 0.2uA; @VR (V): 30V; TRR Max (ns): 5ns; Pin: F1; Package: SOD-323

BAT46W
Galaxy Semi-Conductor Co Ltd
Rectifier Diode,

SF28
Galaxy Microelectronics
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: DO-15

S07M
Galaxy Microelectronics
Rectifier Diode, 1 Element, 0.7A, 1000V V(RRM),

BAS70H
Galaxy Microelectronics
Description: Rectifier Diode,

RB520S-40
Galaxy Microelectronics
Description: Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 40V V(RRM), Silicon, SOD-523, 2 PIN

MBR10200
Galaxy Microelectronics
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 200V; IAV Max (A): 10A; VFM Max (V): 0.9V; @ IF (A): 10A; IFSM Max (A): 150A; IR Max (uA): 100uA; @VR (V): 200V; Package: TO-220AC

BAT46WS
Galaxy Microelectronics
Rectifier Diode,

MBR30100PT
Galaxy Microelectronics
Rectifier Diode,
Другие включают "RB751" Детали

RB751S-40
Galaxy Semi-Conductor Co Ltd
Description: Rectifier Diode,