SGP13N60UF
Mult. :
Соответствующие детали
SGH80N60UFD
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
SGR2N60UFD
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, DPAK-3
SGL60N90D
Samsung Semiconductor
Description: Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
SGP13N60UFD
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN
SGL40N150D
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
SGH30N60RUF
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
SGR20N40L
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 450V V(BR)CES, N-Channel, DPAK-3
SGL40N150
Samsung Semiconductor
Description: Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN