RD35HUF2

Mitsubishi Electric

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8

RD70HVF1C-501

Mitsubishi Electric

RF Power Field-Effect Transistor,

RD02MUS1B

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

MGFS45V2527A

Mitsubishi Electric

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN

RD04HMS2

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

RD70HHF1

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

MGF0906B

Mitsubishi Electric

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN

RD70HUP2

Mitsubishi Electric

RF Power Field-Effect Transistor,

MGFC47B3436B

Mitsubishi Electric

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-60, 3 PIN

MGFC42V4450

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

MGF1102

Mitsubishi Electric

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN

RD60HUF1

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

M63850FP

Mitsubishi Electric

Description: Power Field-Effect Transistor, 1.5A I(D), 3-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

RD02LUS2-T513

Mitsubishi Electric

RF Power Field-Effect Transistor,

RD06HVF1-501

Mitsubishi Electric

Description: RF Power Field-Effect Transistor,

RD30HUF1

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

MGF1923-01

Mitsubishi Electric

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

MGFC45V4450A

Mitsubishi Electric

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN

MGFC36V4450A-51

Mitsubishi Electric

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

MGFC42V3436

Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN