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Memory Connectors - Accessories

Изображение	Тип	Марка	Объяснение	Установленная цена	Количество	RoHS	Factory Lead Time	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Max Supply Current	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	I/O Type	Memory IC Type	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width

Изображение	Тип	Марка	Объяснение	Количество	Factory Lead Time	Mount	Surface Mount	Number of Pins	Number of Terminals	Access Time-Max	Clock Frequency-Max (fCLK)	Ihs Manufacturer	Manufacturer Part Number	Moisture Sensitivity Levels	Number of Words	Number of Words Code	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Code	Package Description	Package Equivalence Code	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Supply Voltage-Nom (Vsup)	JESD-609 Code	Pbfree Code	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Number of Functions	Terminal Pitch	Reach Compliance Code	Pin Count	JESD-30 Code	Qualification Status	Operating Supply Voltage	Supply Voltage-Max (Vsup)	Power Supplies	Temperature Grade	Supply Voltage-Min (Vsup)	Max Supply Voltage	Min Supply Voltage	Memory Size	Number of Ports	Nominal Supply Current	Operating Mode	Max Supply Current	Supply Current-Max	Access Time	Data Bus Width	Organization	Output Characteristics	Seated Height-Max	Memory Width	Address Bus Width	Density	Standby Current-Max	Memory Density	Max Frequency	I/O Type	Memory IC Type	Refresh Cycles	Sequential Burst Length	Interleaved Burst Length	Access Mode	Self Refresh	Length	Width
	Mfr. Тип IS43R32800B-6BLI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	256M, 2.5V, DDR, 16MX16, 166MHZ, 144-BALL BGA (12MMX12MM) RO Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	144	0.7 ns	-	INTEGRATED SILICON SOLUTION INC	IS43R32800B-6BLI	3	8388608 words	8000000	85 °C	-40 °C	PLASTIC/EPOXY	LFBGA	LFBGA,	-	SQUARE	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA	10	5.68	-	Yes	2.5 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	260	1	0.8 mm	compliant	144	S-PBGA-B144	Not Qualified	-	2.7 V	-	INDUSTRIAL	2.3 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	8MX32	-	1.4 mm	32	-	-	-	268435456 bit	-	-	DDR DRAM	-	-	-	FOUR BANK PAGE BURST	YES	12 mm	12 mm
IS43R32800B-6BLI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS42S16800D-6TLI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM 128M 8Mx16 166Mhz Сборник данных Сравнение	Min.:1 Mult.:1	-	Surface Mount	YES	54	54	5.4 ns	166 MHz	INTEGRATED SILICON SOLUTION INC	IS42S16800D-6TLI	3	8388608 words	8000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	TSOP2, TSOP54,.46,32	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	10	5.61	Compliant	Yes	3.3 V	e3	-	EAR99	Matte Tin (Sn) - annealed	85 °C	-40 °C	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	260	1	0.8 mm	compliant	54	R-PDSO-G54	Not Qualified	3.3 V	3.6 V	3.3 V	INDUSTRIAL	3 V	3.6 V	3 V	16 MB	1	180 mA	SYNCHRONOUS	-	0.18 mA	5.4 ns	16 b	8MX16	3-STATE	1.2 mm	16	14 b	128 Mb	0.001 A	134217728 bit	166 MHz	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
IS42S16800D-6TLI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43DR83200A-3DBLI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip DDR2 SDRAM 256M-Bit 32M x 8 1.8V 60-Pin TWBGA - Bulk (Alt: IS43DR83200A-3DBLI) Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	Surface Mount	YES	60	60	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC	IS43DR83200A-3DBLI	-	33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	BGA	40	5.84	Compliant	Yes	1.8 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	85 °C	-40 °C	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	260	1	0.8 mm	compliant	60	R-PBGA-B60	Not Qualified	1.8 V	1.9 V	1.8 V	INDUSTRIAL	1.7 V	1.9 V	1.7 V	32 MB	1	330 mA	SYNCHRONOUS	135 mA	0.33 mA	3 ns	8 b	32MX8	3-STATE	1.2 mm	8	15 b	256 Mb	0.005 A	268435456 bit	333 MHz	COMMON	DDR DRAM	8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10.5 mm	8 mm
IS43DR83200A-3DBLI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43R16160B-6BL Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	256M, 2.5V, Ddr, 16MX16, 166MHZ, 60 Ball BGA (8MMX13MM) Rohs Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	60	0.7 ns	166 MHz	INTEGRATED SILICON SOLUTION INC	IS43R16160B-6BL	-	16777216 words	16000000	70 °C	-	PLASTIC/EPOXY	TBGA	TBGA, BGA60,9X12,40/32	BGA60,9X12,40/32	RECTANGULAR	GRID ARRAY, THIN PROFILE	Obsolete	BGA	40	5.63	Compliant	Yes	2.5 V	e1	-	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	70 °C	0 °C	AUTO/SELF REFRESH	8542.32.00.24	BOTTOM	BALL	260	1	1 mm	compliant	60	R-PBGA-B60	Not Qualified	-	2.7 V	2.5 V	COMMERCIAL	2.3 V	2.7 V	2.3 V	32 MB	1	-	SYNCHRONOUS	-	0.25 mA	700 ps	16 b	16MX16	3-STATE	1.2 mm	16	-	-	0.025 A	268435456 bit	166 MHz	COMMON	DDR DRAM	8192	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	13 mm	8 mm
IS43R16160B-6BL Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS41C16100C-50KI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip EDO 16M-Bit 1M x 16 5V 42-Pin SOJ Сборник данных Сравнение	Min.:1 Mult.:1	13 Weeks, 6 Days	-	YES	-	42	50 ns	-	INTEGRATED SILICON SOLUTION INC	IS41C16100C-50KI	-	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	SOJ	SOJ,	-	RECTANGULAR	SMALL OUTLINE	Not Recommended	SOJ	-	5.55	-	No	5 V	-	-	EAR99	-	-	-	CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH	8542.32.00.02	DUAL	J BEND	-	1	1.27 mm	compliant	42	R-PDSO-J42	Not Qualified	-	5.5 V	-	INDUSTRIAL	4.5 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	1MX16	-	3.76 mm	16	-	-	-	16777216 bit	-	-	EDO DRAM	-	-	-	EDO PAGE	YES	27.305 mm	10.16 mm
IS41C16100C-50KI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43R16400B-6TL Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	64M, 2.5V, DDR, 4Mx16, 166MHz, 66 pin TSOP II (400 mil) RoHS, Сборник данных Сравнение	Min.:1 Mult.:1	13 Weeks, 6 Days	-	YES	-	66	0.7 ns	166 MHz	INTEGRATED SILICON SOLUTION INC	IS43R16400B-6TL	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2	-	5.43	-	Yes	2.5 V	-	-	EAR99	-	-	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.65 mm	compliant	66	R-PDSO-G66	Not Qualified	-	2.7 V	2.5 V	COMMERCIAL	2.3 V	-	-	-	1	-	SYNCHRONOUS	-	0.2 mA	-	-	4MX16	3-STATE	1.2 mm	16	-	-	0.01 A	67108864 bit	-	COMMON	DDR DRAM	4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
IS43R16400B-6TL Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43R16400B-5TL Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip DDR SDRAM 64M-Bit 4M X 16 2.5V 66-Pin TSOP-II Сборник данных Сравнение	Min.:1 Mult.:1	13 Weeks, 6 Days	-	YES	-	66	0.7 ns	200 MHz	INTEGRATED SILICON SOLUTION INC	IS43R16400B-5TL	-	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TSOP2	TSOP2, TSSOP66,.46	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Active	TSOP2	-	5.19	-	Yes	2.5 V	-	-	EAR99	-	-	-	AUTO/SELF REFRESH	8542.32.00.02	DUAL	GULL WING	-	1	0.65 mm	compliant	66	R-PDSO-G66	Not Qualified	-	2.7 V	2.5 V	COMMERCIAL	2.3 V	-	-	-	1	-	SYNCHRONOUS	-	0.22 mA	-	-	4MX16	3-STATE	1.2 mm	16	-	-	0.01 A	67108864 bit	-	COMMON	DDR DRAM	4096	2,4,8	2,4,8	FOUR BANK PAGE BURST	YES	22.22 mm	10.16 mm
IS43R16400B-5TL Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS41LV16105B-50TI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM 16M 1Mx16 50ns Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	44	50 ns	-	INTEGRATED SILICON SOLUTION INC	IS41LV16105B-50TI	3	1048576 words	1000000	85 °C	-40 °C	PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-44/50	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.73	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH	8542.32.00.02	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	-	3.6 V	3.3 V	INDUSTRIAL	3 V	-	-	-	1	-	ASYNCHRONOUS	-	0.16 mA	-	-	1MX16	3-STATE	1.2 mm	16	-	-	0.002 A	16777216 bit	-	COMMON	FAST PAGE DRAM	1024	-	-	FAST PAGE	NO	20.95 mm	10.16 mm
IS41LV16105B-50TI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43LR32400E-6BL Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM 128M, 1.8V, Mobile DDR, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	90	5.5 ns	166 MHz	INTEGRATED SILICON SOLUTION INC	IS43LR32400E-6BL	3	4194304 words	4000000	70 °C	-	PLASTIC/EPOXY	TFBGA	TFBGA, BGA90,9X15,32	BGA90,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	DSBGA	40	5.56	-	Yes	1.8 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	AUTO/SELF REFRESH	8542.32.00.02	BOTTOM	BALL	260	1	0.8 mm	compliant	90	R-PBGA-B90	Not Qualified	-	1.95 V	1.8 V	COMMERCIAL	1.7 V	-	-	-	1	-	SYNCHRONOUS	-	0.09 mA	-	-	4MX32	3-STATE	1.2 mm	32	-	-	0.00003 A	134217728 bit	-	COMMON	DDR DRAM	4096	2,4,8,16	2,4,8,16	FOUR BANK PAGE BURST	YES	13 mm	8 mm
IS43LR32400E-6BL Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43DR16128-3DBL Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	2G, 1.8V, DDR2, 128Mx16, 333Mhz @ CL5, 126 ball BGA (11mmx14mm) RoHS Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	84	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC	IS43DR16128-3DBL	-	134217728 words	128000000	70 °C	-	PLASTIC/EPOXY	LFBGA	LFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, LOW PROFILE, FINE PITCH	Obsolete	BGA	40	5.63	-	Yes	1.8 V	e1	Yes	EAR99	Tin/Silver/Copper (Sn/Ag/Cu)	-	-	AUTO/SELF REFRESH	8542.32.00.36	BOTTOM	BALL	260	1	0.8 mm	compliant	84	R-PBGA-B84	Not Qualified	-	1.9 V	1.8 V	COMMERCIAL	1.7 V	-	-	-	1	-	SYNCHRONOUS	-	0.485 mA	-	-	128MX16	3-STATE	1.4 mm	16	-	-	0.03 A	2147483648 bit	-	COMMON	DDR DRAM	8192	4,8	4,8	MULTI BANK PAGE BURST	YES	13.5 mm	10.5 mm
IS43DR16128-3DBL Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS49RL18320-125EBL-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip RLDRAM3 576M-Bit 32M x 18 1.35V/2.5V 168-Pin FCBGA Сборник данных Сравнение	Min.:1 Mult.:1	8 Weeks	-	YES	-	168	10 ns	-	INTEGRATED SILICON SOLUTION INC	IS49RL18320-125EBL-TR	-	33554432 words	32000000	95 °C	-	PLASTIC/EPOXY	TBGA	TBGA,	-	SQUARE	GRID ARRAY, THIN PROFILE	Not Recommended	-	NOT SPECIFIED	5.63	-	Yes	1.35 V	-	-	-	-	-	-	AUTO REFRESH	-	BOTTOM	BALL	NOT SPECIFIED	1	1 mm	compliant	-	S-PBGA-B168	-	-	1.42 V	-	OTHER	1.28 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	32MX18	-	1.2 mm	18	-	-	-	603979776 bit	-	-	DDR DRAM	-	-	-	MULTI BANK PAGE BURST	-	13.5 mm	13.5 mm
IS49RL18320-125EBL-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS41LV16105B-50T Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM 16M 1Mx16 50ns Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	44	50 ns	-	INTEGRATED SILICON SOLUTION INC	IS41LV16105B-50T	3	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-44/50	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.77	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH	8542.32.00.02	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	1	-	ASYNCHRONOUS	-	0.16 mA	-	-	1MX16	3-STATE	1.2 mm	16	-	-	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	1024	-	-	FAST PAGE	NO	20.95 mm	10.16 mm
IS41LV16105B-50T Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS41LV16105B-60T Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM 16M 1Mx16 60ns Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	44	60 ns	-	INTEGRATED SILICON SOLUTION INC	IS41LV16105B-60T	3	1048576 words	1000000	70 °C	-	PLASTIC/EPOXY	TSOP2	0.400 INCH, PLASTIC, TSOP2-44/50	TSOP44/50,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	Obsolete	TSOP2	NOT SPECIFIED	5.77	-	No	3.3 V	e0	-	EAR99	Tin/Lead (Sn/Pb)	-	-	RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH	8542.32.00.02	DUAL	GULL WING	NOT SPECIFIED	1	0.8 mm	unknown	44	R-PDSO-G44	Not Qualified	-	3.6 V	3.3 V	COMMERCIAL	3 V	-	-	-	1	-	ASYNCHRONOUS	-	0.16 mA	-	-	1MX16	3-STATE	1.2 mm	16	-	-	0.001 A	16777216 bit	-	COMMON	FAST PAGE DRAM	1024	-	-	FAST PAGE	NO	20.95 mm	10.16 mm
IS41LV16105B-60T Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46LR16160G-6BLA2-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip Mobile DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin TFBGA T/R - Tape and Reel (Alt: IS46LR16160G-6BLA2-TR) Сборник данных Сравнение	Min.:1 Mult.:1	12 Weeks	-	YES	-	60	5.5 ns	-	INTEGRATED SILICON SOLUTION INC	IS46LR16160G-6BLA2-TR	-	16777216 words	16000000	105 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Not Recommended	-	NOT SPECIFIED	5.69	Compliant	Yes	1.8 V	-	-	-	-	-	-	AUTO/SELF REFRESH	-	BOTTOM	BALL	NOT SPECIFIED	1	0.8 mm	compliant	-	R-PBGA-B60	-	-	1.95 V	-	INDUSTRIAL	1.7 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	16MX16	-	1.1 mm	16	-	-	-	268435456 bit	-	-	DDR DRAM	-	-	-	FOUR BANK PAGE BURST	YES	10 mm	8 mm
IS46LR16160G-6BLA2-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43TR85120A-107MBLI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	DRAM Chip DDR3 SDRAM 4G-Bit 512Mx8 1.5V 78-Pin TWBGA - Trays (Alt: IS43TR85120A-107MBLI) Сборник данных Сравнение	Min.:1 Mult.:1	13 Weeks, 6 Days	-	YES	-	78	0.085 ns	-	INTEGRATED SILICON SOLUTION INC	IS43TR85120A-107MBLI	-	536870912 words	512000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	End Of Life	-	-	5.63	-	Yes	1.5 V	-	-	-	-	-	-	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	-	BOTTOM	BALL	-	1	0.8 mm	compliant	-	R-PBGA-B78	-	-	1.575 V	-	INDUSTRIAL	1.425 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	512MX8	-	1.2 mm	8	-	-	-	4294967296 bit	-	-	DDR DRAM	-	-	-	MULTI BANK PAGE BURST	YES	10.5 mm	9 mm
IS43TR85120A-107MBLI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS46DR16640A-25DBLA2-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	AUTOMOTIVE (TC: -40 TO 105C),1G, 1.8V, DDR2, 64MX16, 400MHZ Сборник данных Сравнение	Min.:1 Mult.:1	-	-	-	-	-	-	-	INTEGRATED SILICON SOLUTION INC	IS46DR16640A-25DBLA2-TR	-	-	-	-	-	-	-	,	-	-	-	Obsolete	-	-	5.84	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IS46DR16640A-25DBLA2-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43DR16320B-25DBLI-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	512M, 1.8V, DDR2, 32MX16, 400MHZ @ CL5, 84 BALL BGA (10.5MMX Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	84	0.4 ns	400 MHz	INTEGRATED SILICON SOLUTION INC	IS43DR16320B-25DBLI-TR	1	33554432 words	32000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA84,9X15,32	BGA84,9X15,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	-	NOT SPECIFIED	5.84	-	Yes	1.8 V	e3	Yes	-	Matte Tin (Sn)	-	-	AUTO/SELF REFRESH	-	BOTTOM	BALL	225	1	0.8 mm	compliant	-	R-PBGA-B84	Not Qualified	-	1.9 V	1.8 V	INDUSTRIAL	1.7 V	-	-	-	1	-	SYNCHRONOUS	-	0.35 mA	-	-	32MX16	3-STATE	1.2 mm	16	-	-	0.008 A	536870912 bit	-	COMMON	DDR DRAM	8192	4,8	4,8	FOUR BANK PAGE BURST	YES	13 mm	10.5 mm
IS43DR16320B-25DBLI-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43TR16640AL-15GBLI Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	1G, 1.35V, DDR3, 64MX16, 1333MT/S @ 8-8-8, 96 BALL BGA (9MM Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	96	-	-	INTEGRATED SILICON SOLUTION INC	IS43TR16640AL-15GBLI	-	67108864 words	64000000	-	-	PLASTIC/EPOXY	TFBGA	TFBGA,	-	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	-	-	5.61	-	-	1.35 V	-	-	-	-	-	-	AUTO/SELF REFRESH	-	BOTTOM	BALL	-	1	0.8 mm	unknown	-	R-PBGA-B96	-	-	1.45 V	-	-	1.283 V	-	-	-	1	-	SYNCHRONOUS	-	-	-	-	64MX16	-	1.2 mm	16	-	-	-	1073741824 bit	-	-	DDR DRAM	-	-	-	MULTI BANK PAGE BURST	YES	13 mm	9 mm
IS43TR16640AL-15GBLI Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS43DR86400B-3DBLI-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (10mmx10.5mm) RoHS, IT, T&R Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	60	0.45 ns	333 MHz	INTEGRATED SILICON SOLUTION INC	IS43DR86400B-3DBLI-TR	1	67108864 words	64000000	85 °C	-40 °C	PLASTIC/EPOXY	TFBGA	TFBGA, BGA60,9X11,32	BGA60,9X11,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	Obsolete	-	NOT SPECIFIED	5.84	-	Yes	1.8 V	e3	Yes	-	Matte Tin (Sn)	-	-	AUTO/SELF REFRESH	-	BOTTOM	BALL	225	1	0.8 mm	compliant	-	R-PBGA-B60	Not Qualified	-	1.9 V	1.8 V	INDUSTRIAL	1.7 V	-	-	-	1	-	SYNCHRONOUS	-	0.22 mA	-	-	64MX8	3-STATE	1.2 mm	8	-	-	0.008 A	536870912 bit	-	COMMON	DDR DRAM	8192	4,8	4,8	FOUR BANK PAGE BURST	YES	10.5 mm	10 mm
IS43DR86400B-3DBLI-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -
	Mfr. Тип IS42VM16400G-75BLI-TR Anlielectronics Тип	Integrated Silicon Solution, Inc. (ISSI)	64M, 1.8v, Mobile SDRAM, 4Mx16, 133Mhz, 54 ball BGA (8mmx8mm) RoHS, IT, T&R Сборник данных Сравнение	Min.:1 Mult.:1	-	-	YES	-	54	6 ns	133 MHz	INTEGRATED SILICON SOLUTION INC	IS42VM16400G-75BLI-TR	-	4194304 words	4000000	85 °C	-40 °C	PLASTIC/EPOXY	FBGA	FBGA, BGA54,9X9,32	BGA54,9X9,32	SQUARE	GRID ARRAY, FINE PITCH	Active	-	-	5.75	-	Yes	1.8 V	-	-	-	-	-	-	-	-	BOTTOM	BALL	-	-	0.8 mm	compliant	-	S-PBGA-B54	Not Qualified	-	-	1.8 V	INDUSTRIAL	-	-	-	-	-	-	-	-	0.075 mA	-	-	4MX16	3-STATE	-	16	-	-	0.00003 A	67108864 bit	-	COMMON	SYNCHRONOUS DRAM	4096	1,2,4,8,FP	1,2,4,8	-	-	-	-
IS42VM16400G-75BLI-TR Integrated Silicon Solution, Inc. (ISSI) RoHS : Инкапсуляция : - Есть складские запасы : - 1 : -

Connectors, Interconnects

Memory Connectors - Accessories definition: Memory Connectors - Accessories Product Listing: IS43R32800B-6BLI,IS42S16800D-6TLI,IS43DR83200A-3DBLI,IS43R16160B-6BL,IS41C16100C-50KI.Connectors, Interconnects type:Circular Connectors(4156894),Barrel - Audio Connectors(708215),Rectangular Connectors - Headers, Male Pins(575678),Card Edge Connectors - Edgeboard Connectors(554558),D-Sub Connectors(512402) .Memory Connectors - Accessories has 648 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Anli.

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